Imagens apenas para referência
HALF BRIDGE BASED MOSFET DRIVER
-
FabricanteNational Semiconductor
-
Peça do Fabricante #LM5109BMA/NOP
-
Em Estoque8960
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | 1 |
| Series | Bulk |
| Type | Active |
Visão Geral
Description
Key features of the LM5109BMA/NOP include its ability to handle high voltages, typically up to 100V, and its capability to provide high peak output currents, which ensure fast switching of the MOSFETs, thereby reducing power loss. It features a bootstrap diode for high-side drive voltage generation, under-voltage lockout for both high-side and low-side drivers, and a small propagation delay for improved performance.
The device is available in a compact package, making it suitable for applications where space is a constraint. Its design ensures robust operation over a wide range of conditions, making it a reliable choice for demanding applications. Overall, the LM5109BMA/NOP is valued for enhancing efficiency and reliability in power electronic systems.
Equivalent
1. IRS2153D - Infineon Technologies
2. NCP5181 - ON Semiconductor
3. FAN7382 - Fairchild Semiconductor (now ON Semiconductor)
4. UCC27712 - Texas Instruments
5. L6386E - STMicroelectronics
These alternatives offer similar functionalities for driving high-side and low-side MOSFETs or IGBTs in half-bridge configurations. Always verify specific requirements and compatibility with your application.
Features
1. Bootstrap Operation: Supports high-side and low-side MOSFETs with a bootstrap structure for high-side gate drive supply.
2. Wide Input Voltage Range: Operates over a broad range, making it versatile for various applications.
3. High-Speed Switching: Capable of fast switching with short propagation delays and high drive current, improving efficiency.
4. Low-Side and High-Side Driver: Provides separate high-side and low-side outputs for flexible control of the power MOSFETs.
5. Under-Voltage Lockout (UVLO): Protects the device by ensuring it operates only when the supply voltage is above the threshold.
6. Fault Protection: Includes features like shoot-through protection to prevent simultaneous conduction of high-side and low-side MOSFETs.
7. Thermal Efficiency: Optimized for minimal power dissipation, enhancing thermal performance.
These features make the LM5109BMA/NOP suitable for applications in motor drives, power supplies, and DC-DC converters.
Pinout
Here is a brief overview of its pin functions:
1. HB: High-side bootstrap voltage input.
2. HO: High-side gate drive output.
3. HS: High-side source connection.
4. HI: High-side input.
5. LI: Low-side input.
6. VDD: Supply voltage for the low-side driver and logic.
7. LO: Low-side gate drive output.
8. VSS: Ground reference for the IC.
The LM5109BMA/NOPB's design allows it to efficiently manage the switching of high-voltage, high-current loads, offering robust performance in demanding environments.
Manufacturer
Application
1. Switching Power Supplies: Ideal for driving MOSFETs and IGBTs in DC-DC converters and other power supply topologies.
2. Motor Drives: Suitable for motor control applications due to its ability to drive high-side and low-side switches efficiently.
3. Lighting Systems: Can be used in LED and other lighting systems requiring efficient power conversion.
4. Class D Amplifiers: Utilized in audio applications that demand robust and rapid gate drive capabilities.
5. Renewable Energy Systems: Applicable in solar inverters and other renewable energy conversion systems.
These applications benefit from the device's high-speed operation, low power consumption, and reliable performance in high-voltage environments.