Imagens apenas para referência
LND150N8-G
+Lista de MateriaisMOSFET N-CH 500V 30MA SOT89-3
-
FabricanteTecnologia Microchip
-
Peça do Fabricante #LND150N8-G
-
Pacote TO-243AA
-
Em Estoque6554
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 30mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 0V |
| RdsOn(Max)@IdVgs | 1000Ohm @ 500µA, 0V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 10 pF @ 25 V |
| FETFeature | Depletion Mode |
| PowerDissipation(Max) | 1.6W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-89-3 |
Visão Geral
Description
The LND150N8-G is a depletion-mode N-channel MOSFET produced by Supertex, a subsidiary of Microchip Technology. It's designed for a range of low-power applications. This MOSFET is characterized by its capability to operate with a gate-source voltage (Vgs) of 0V, allowing it to conduct current even when no external voltage is applied to the gate, which distinguishes it from enhancement-mode MOSFETs.
Key features of the LND150N8-G include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of up to 100mA.
2. Low On-Resistance: Offers low on-state resistance, leading to efficient performance with minimal power loss.
3. Temperature Range: Operates effectively within a wide temperature range, typically from -55°C to +150°C.
4. Package: Comes in various package options like TO-92, offering flexibility for different applications.
The LND150N8-G is commonly used in offline switch-mode power supplies, solid-state relays, and amplifiers, thanks to its robust high-voltage operation and efficient switching capabilities.
Key features of the LND150N8-G include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of up to 100mA.
2. Low On-Resistance: Offers low on-state resistance, leading to efficient performance with minimal power loss.
3. Temperature Range: Operates effectively within a wide temperature range, typically from -55°C to +150°C.
4. Package: Comes in various package options like TO-92, offering flexibility for different applications.
The LND150N8-G is commonly used in offline switch-mode power supplies, solid-state relays, and amplifiers, thanks to its robust high-voltage operation and efficient switching capabilities.
Equivalent
The LND150N8-G is a depletion-mode N-channel MOSFET. Some equivalent or similar products include:
1. DN2540 - Another depletion-mode N-channel MOSFET.
2. BSS139 - Although slightly different, it can be used for similar applications.
3. MMBFJ111 - A JFET with similar characteristics.
Always verify specifications and ratings to ensure compatibility with your application.
1. DN2540 - Another depletion-mode N-channel MOSFET.
2. BSS139 - Although slightly different, it can be used for similar applications.
3. MMBFJ111 - A JFET with similar characteristics.
Always verify specifications and ratings to ensure compatibility with your application.
Features
The LND150N8-G is an N-channel depletion mode MOSFET. Key features include:
1. Depletion Mode: Unlike enhancement mode MOSFETs, it is normally on at zero gate voltage, making it suitable for specific applications.
2. Low On-Resistance: It offers a low drain-source on-resistance, which reduces power loss and enhances efficiency.
3. High Breakdown Voltage: The device features a high drain-source breakdown voltage, typically around 500V, allowing it to handle high-voltage applications.
4. Low Gate Charge: This feature facilitates faster switching speeds, improving performance in high-frequency applications.
5. TO-92 Package: The LND150N8-G comes in a TO-92 package, which is compact and suitable for through-hole mounting.
6. Wide Application Range: It is commonly used in amplifiers, high-voltage regulators, and level-shifting circuits.
These features make the LND150N8-G a versatile choice for various electronic applications requiring a depletion mode MOSFET.
1. Depletion Mode: Unlike enhancement mode MOSFETs, it is normally on at zero gate voltage, making it suitable for specific applications.
2. Low On-Resistance: It offers a low drain-source on-resistance, which reduces power loss and enhances efficiency.
3. High Breakdown Voltage: The device features a high drain-source breakdown voltage, typically around 500V, allowing it to handle high-voltage applications.
4. Low Gate Charge: This feature facilitates faster switching speeds, improving performance in high-frequency applications.
5. TO-92 Package: The LND150N8-G comes in a TO-92 package, which is compact and suitable for through-hole mounting.
6. Wide Application Range: It is commonly used in amplifiers, high-voltage regulators, and level-shifting circuits.
These features make the LND150N8-G a versatile choice for various electronic applications requiring a depletion mode MOSFET.
Pinout
The LND150N8-G is a depletion-mode MOSFET manufactured by Supertex, which is now a part of Microchip Technology. It is typically housed in an 8-pin DIP (Dual In-line Package) or similar configuration, but its core functionality can be understood in terms of a standard 3-pin MOSFET layout: Drain, Source, and Gate.
1. Pin Count: Although the package may have more pins, the essential MOSFET operation revolves around these three primary connections.
2. Function:
- Drain (D): This is where the output current flows in, and it typically connects to the load.
- Source (S): This is where the output current flows out, commonly connected to ground or a negative voltage supply.
- Gate (G): This pin controls the MOSFET's conduction state. For the LND150N8-G, being a depletion-mode MOSFET, it is normally on without any gate-source voltage and requires a negative gate voltage to turn off.
This MOSFET is used in applications needing normally-on switches, high-voltage amplifiers, or constant current sources, due to its capability to handle high voltages and currents.
1. Pin Count: Although the package may have more pins, the essential MOSFET operation revolves around these three primary connections.
2. Function:
- Drain (D): This is where the output current flows in, and it typically connects to the load.
- Source (S): This is where the output current flows out, commonly connected to ground or a negative voltage supply.
- Gate (G): This pin controls the MOSFET's conduction state. For the LND150N8-G, being a depletion-mode MOSFET, it is normally on without any gate-source voltage and requires a negative gate voltage to turn off.
This MOSFET is used in applications needing normally-on switches, high-voltage amplifiers, or constant current sources, due to its capability to handle high voltages and currents.
Manufacturer
The LND150N8-G is manufactured by Microchip Technology Inc. Microchip Technology is a leading semiconductor company that provides a wide range of microcontroller, mixed-signal, analog, and Flash-IP solutions. The company focuses on delivering innovative products that serve applications in the consumer electronics, automotive, industrial, and communications sectors, among others. Microchip's solutions are designed to enhance the performance and efficiency of electronic devices, offering reliability and ease of use for designers and engineers.
Application
The LND150N8-G is a depletion-mode N-channel MOSFET, primarily used in applications that require low on-resistance and high breakdown voltage. Common application areas include:
1. Amplifiers: Used in audio and RF amplifiers due to its linear characteristics.
2. Switching Circuits: Suitable for high-voltage switching applications, including relay and solenoid drivers.
3. Voltage Regulators: Acts in regulation circuits which require constant current and stable voltages.
4. Analog Circuits: Helpful in current sources or sinks and level shifting circuits.
5. Protection Circuits: Employed in over-voltage protection circuits due to its high voltage tolerance.
These properties make it versatile for various industrial, automotive, and consumer electronics applications.
1. Amplifiers: Used in audio and RF amplifiers due to its linear characteristics.
2. Switching Circuits: Suitable for high-voltage switching applications, including relay and solenoid drivers.
3. Voltage Regulators: Acts in regulation circuits which require constant current and stable voltages.
4. Analog Circuits: Helpful in current sources or sinks and level shifting circuits.
5. Protection Circuits: Employed in over-voltage protection circuits due to its high voltage tolerance.
These properties make it versatile for various industrial, automotive, and consumer electronics applications.
Package
The LND150N8-G is a depletion-mode MOSFET available in an 8-pin DIP (Dual In-line Package).
