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M29W160EB70N6E
+Lista de MateriaisIC FLASH 16MBIT PARALLEL 48TSOP
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FabricanteMicron Technology Inc.
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Peça do Fabricante #M29W160EB70N6E
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Em Estoque2267
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Base Product Number | M29W160 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mbit |
| Memory Organization | 2M x 8, 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Packaging | Tray |
| Access Time | 70 ns |
Visão Geral
Description
The M29W160EB70N6E offers sector-based architecture, allowing individual sectors to be erased and programmed, providing flexibility in data management. It includes a 64-Kbit boot block for secure bootloader storage and ten 64-Kbit parameter blocks, along with 31 main blocks of 64 Kbit each for application code and data.
Additional features include hardware protection for the first or last boot block, software data protection, and a minimum of 100,000 program/erase cycles per block, ensuring durability in various applications. This device is commonly used in automotive, industrial, and consumer electronics products.
Equivalent
Features
1. Architecture: The chip is organized as 2 Megabytes x 8 or 1 Megabyte x 16 bits, with a sector architecture that includes boot, parameter, and main sectors.
2. Interface: It supports a parallel interface for data exchange.
3. Performance: The chip operates with a 70 ns access time, allowing for fast read operations.
4. Voltage: It functions with a single voltage supply, typically 2.7V to 3.6V for read, program, and erase operations.
5. Erase/Program: The M29W160EB70N6E offers sector erase and byte/word program capabilities, making it suitable for frequent data updates.
6. Endurance and Data Retention: It provides high program/erase cycle endurance and data retention.
7. Package: The chip comes in a TSOP-48 package, which is compact and suitable for space-constrained applications.
8. Applications: It is designed for use in embedded systems, digital consumer electronics, and automotive applications.
These features make it a versatile choice for a range of memory storage needs in various electronic devices.
Pinout
1. Memory Storage: It is used for non-volatile storage applications where data retention is crucial, even when power is removed.
2. Read/Write Operations: Supports standard address, data, and control operations to perform read and write tasks.
3. Sector Erase: Allows for individual sectors of memory to be erased, enabling efficient data management.
4. Boot Block Architecture: Designed with a flexible block architecture that supports top or bottom boot configurations.
5. Program and Erase Suspend: Capability to suspend programming or erasing operations, allowing read access to other parts of the memory.
6. Low Power Consumption: Optimized for low-power operation, making it suitable for battery-powered devices.
For precise pin configuration and functionality, please refer to the manufacturer's datasheet or technical documentation.
Manufacturer
Application
1. Consumer Electronics: Used in devices like set-top boxes, digital cameras, and audio equipment for firmware storage.
2. Telecommunications: Employed in networking equipment for storing configuration data and system updates.
3. Automotive: Used for storing critical firmware in control systems and infotainment systems.
4. Industrial Control: Suitable for programmable logic controllers and other industrial automation systems.
5. Computing: Incorporated in BIOS storage for PCs and other computing devices.
Its versatility and reliability make it suitable for various applications requiring non-volatile memory.
Package
Frequently Asked Questions
Q: What is the memory organization for the M29W160EB70N6E?
A: It is organized as 2M x 8 bits or 1M x 16 bits, selectable via the byte/word configuration pin.
Q: What is the access time and voltage supply range?
A: Access time is 70 ns, and the supply voltage range is 2.7V to 3.6V, ensuring fast read performance.
Q: Is this device suitable for industrial temperature environments?
A: Yes, it operates from -40°C to 85°C (TA), making it suitable for industrial applications.
Q: What package type does the M29W160EB70N6E use?
A: It comes in a 48-TFSOP (0.724", 18.40mm Width) surface-mount package, with a supplier device package of 48-TSOP.
Q: Can this memory be used in parallel interface applications?
A: Yes, it features a parallel memory interface, compatible with standard NOR Flash controllers.
Q: What is the write cycle time for word and page programming?
A: The write cycle time is 70ns for word and page programming, supporting efficient data updates.