M29W160EB70N6E

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M29W160EB70N6E

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IC FLASH 16MBIT PARALLEL 48TSOP

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #M29W160EB70N6E

  • Em Estoque2267

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Especificações

Atributo Valor
Part Status Obsolete
Base Product Number M29W160
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 16Mbit
Memory Organization 2M x 8, 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Packaging Tray
Access Time 70 ns

Visão Geral

Description

The M29W160EB70N6E is a 16-megabit (2 megabytes) flash memory device from STMicroelectronics, part of the M29W160E family. It is designed for embedded applications requiring non-volatile memory to store code and data. Key features include a single supply voltage range for program, erase, and read operations, typically 2.7V to 3.6V, which makes it suitable for battery-powered devices. The device operates with a 70 ns access time and supports standard 8-bit or 16-bit data bus configurations.
The M29W160EB70N6E offers sector-based architecture, allowing individual sectors to be erased and programmed, providing flexibility in data management. It includes a 64-Kbit boot block for secure bootloader storage and ten 64-Kbit parameter blocks, along with 31 main blocks of 64 Kbit each for application code and data.
Additional features include hardware protection for the first or last boot block, software data protection, and a minimum of 100,000 program/erase cycles per block, ensuring durability in various applications. This device is commonly used in automotive, industrial, and consumer electronics products.

Equivalent

The M29W160EB70N6E is a 16 Mb (2 Mb x 8 or 1 Mb x 16) Flash memory chip from STMicroelectronics. Equivalent products might include other 16 Mb parallel NOR Flash memory chips from manufacturers like Micron, Cypress (Infineon), or Winbond. Specific models could vary based on package type, pin configuration, and voltage requirements. Always check the datasheets for pin compatibility and electrical specifications to ensure interchangeability.

Features

The M29W160EB70N6E is a 16-megabit (Mb), 2-megabyte (MB) Flash memory chip from STMicroelectronics. It features:
1. Architecture: The chip is organized as 2 Megabytes x 8 or 1 Megabyte x 16 bits, with a sector architecture that includes boot, parameter, and main sectors.
2. Interface: It supports a parallel interface for data exchange.
3. Performance: The chip operates with a 70 ns access time, allowing for fast read operations.
4. Voltage: It functions with a single voltage supply, typically 2.7V to 3.6V for read, program, and erase operations.
5. Erase/Program: The M29W160EB70N6E offers sector erase and byte/word program capabilities, making it suitable for frequent data updates.
6. Endurance and Data Retention: It provides high program/erase cycle endurance and data retention.
7. Package: The chip comes in a TSOP-48 package, which is compact and suitable for space-constrained applications.
8. Applications: It is designed for use in embedded systems, digital consumer electronics, and automotive applications.
These features make it a versatile choice for a range of memory storage needs in various electronic devices.

Pinout

The M29W160EB70N6E is a 16 Mbit (2 Mb x 8 or 1 Mb x 16) flash memory chip from STMicroelectronics. It typically comes in a TSOP (Thin Small Outline Package) with 48 pins. The main functions of this chip include:
1. Memory Storage: It is used for non-volatile storage applications where data retention is crucial, even when power is removed.
2. Read/Write Operations: Supports standard address, data, and control operations to perform read and write tasks.
3. Sector Erase: Allows for individual sectors of memory to be erased, enabling efficient data management.
4. Boot Block Architecture: Designed with a flexible block architecture that supports top or bottom boot configurations.
5. Program and Erase Suspend: Capability to suspend programming or erasing operations, allowing read access to other parts of the memory.
6. Low Power Consumption: Optimized for low-power operation, making it suitable for battery-powered devices.
For precise pin configuration and functionality, please refer to the manufacturer's datasheet or technical documentation.

Manufacturer

The M29W160EB70N6E is a memory product manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. It is headquartered in Geneva, Switzerland, and operates in various sectors including industrial, automotive, personal electronics, and communication equipment. The company is known for its innovation and technology in semiconductors, providing solutions for smart driving, smart industry, and the Internet of Things (IoT), among others.

Application

The M29W160EB70N6E is a 16Mb (2Mb x 8 or 1Mb x 16) Flash memory device often utilized in embedded systems applications. Its key application areas include:
1. Consumer Electronics: Used in devices like set-top boxes, digital cameras, and audio equipment for firmware storage.
2. Telecommunications: Employed in networking equipment for storing configuration data and system updates.
3. Automotive: Used for storing critical firmware in control systems and infotainment systems.
4. Industrial Control: Suitable for programmable logic controllers and other industrial automation systems.
5. Computing: Incorporated in BIOS storage for PCs and other computing devices.
Its versatility and reliability make it suitable for various applications requiring non-volatile memory.

Package

The M29W160EB70N6E is a 16 Mbit (2Mb x 8 or 1Mb x 16) Flash memory component, and its package type is TSOP (Thin Small Outline Package) with 48 pins.

Frequently Asked Questions


Q: What is the memory organization for the M29W160EB70N6E?
A: It is organized as 2M x 8 bits or 1M x 16 bits, selectable via the byte/word configuration pin.


Q: What is the access time and voltage supply range?
A: Access time is 70 ns, and the supply voltage range is 2.7V to 3.6V, ensuring fast read performance.


Q: Is this device suitable for industrial temperature environments?
A: Yes, it operates from -40°C to 85°C (TA), making it suitable for industrial applications.


Q: What package type does the M29W160EB70N6E use?
A: It comes in a 48-TFSOP (0.724", 18.40mm Width) surface-mount package, with a supplier device package of 48-TSOP.


Q: Can this memory be used in parallel interface applications?
A: Yes, it features a parallel memory interface, compatible with standard NOR Flash controllers.


Q: What is the write cycle time for word and page programming?
A: The write cycle time is 70ns for word and page programming, supporting efficient data updates.


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