Imagens apenas para referência
M29W160EB70ZA6E
+Lista de MateriaisIC FLASH 16MBIT PARALLEL 48TFBGA
-
FabricanteMicron Technology Inc.
-
Peça do Fabricante #M29W160EB70ZA6E
-
Em Estoque6521
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Base Product Number | M29W160 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mbit |
| Memory Organization | 2M x 8, 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Packaging | Tray |
| Access Time | 70 ns |
Visão Geral
Description
One of its notable features is the ability to perform fast read operations, typically with an access time of 70 nanoseconds. The M29W160EB70ZA6E supports both asynchronous and burst read modes, enhancing data retrieval efficiency. Additionally, it includes a sector protection feature, allowing for selective block protection against accidental erasure or programming.
The device supports common flash memory operations such as program, erase, and read, and can be programmed in-system or with standard EPROM programmers. Its robust design includes endurance of up to 100,000 program/erase cycles per sector, making it reliable for long-term data retention. This flash memory is typically used in applications like consumer electronics, automotive systems, and industrial devices.
Equivalent
1. AMD AM29LV160DB - similar functionality and capacity.
2. Fujitsu MBM29LV160TE - compatible in terms of pinout and architecture.
3. Micron MT28F160C3 - offers comparable specifications.
Ensure compatibility by checking specific parameters like voltage, speed, and package type before using these equivalents.
Features
Key features include:
- Flexible Read/Write Modes: Supports fast read access times and allows byte-by-byte or word-by-word write operations.
- Sector Erase: Allows erasure of individual sectors, enhancing flexibility in data management.
- Low Power Consumption: Designed for efficient power usage during read and write operations.
- Hardware Protection: Includes a hardware-controlled protection feature to prevent accidental program or erase operations.
- Automated Programming and Erase Algorithms: Simplifies operation through internal algorithms that manage programming and erasing.
This device is commonly used in embedded systems, communication devices, and consumer electronics where reliable and efficient non-volatile memory is required.
Pinout
1. Address Inputs (A0-A19): Used to address the memory cells.
2. Data Inputs/Outputs (DQ0-DQ15): Used for data input and output.
3. Chip Enable (E): Activates the memory device.
4. Output Enable (G): Enables data output.
5. Write Enable (W): Allows data to be written to the device.
6. Reset (RP): Resets the device.
7. Write Protect (WP): Protects certain blocks from being erased or programmed.
8. Ready/Busy (RB): Indicates the status of an operation.
9. VCC: Power supply.
10. VSS: Ground.
This device is often used in applications requiring non-volatile storage of code and data, providing features like sector protection and boot block architecture.
Manufacturer
Application
1. Consumer Electronics: Provides firmware storage for devices like TVs, DVD players, and set-top boxes.
2. Industrial Automation: Stores control software and data in programmable logic controllers (PLCs) and human-machine interfaces (HMIs).
3. Automotive: Used in infotainment systems, instrument clusters, and engine control units for firmware and data storage.
4. Networking: Stores operating systems and configuration data in routers, switches, and other networking equipment.
5. Telecommunications: Utilized in mobile base stations and communication devices for firmware storage.
Package
Frequently Asked Questions
Q: What is the memory size and organization of the M29W160EB70ZA6E?
A: It is a 16Mbit NOR Flash, organized as 2M x8 or 1M x16, selectable via byte/word mode.
Q: What voltage supply does this NOR Flash memory require?
A: It operates from a single 2.7V to 3.6V power supply, ideal for low-power embedded designs.
Q: Is this component suitable for surface mount assembly?
A: Yes, it comes in a 48-TFBGA package (6x8mm) and is designed for surface mount soldering.
Q: What is the access time and write cycle time for this device?
A: The access time is 70ns, and the write cycle time (word/page) is also 70ns for fast programming.
Q: What is the operating temperature range of this Flash memory?
A: It is rated for industrial temperature range from -40°C to +85°C, ensuring reliability in harsh environments.
Q: Is the M29W160EB70ZA6E a volatile or non-volatile memory?
A: It is non-volatile, meaning it retains data even when power is removed, typical for NOR Flash.