M29W640FB70N6E

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M29W640FB70N6E

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IC FLASH 64MBIT PARALLEL 48TSOP

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #M29W640FB70N6E

  • Em Estoque2211

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Especificações

Atributo Valor
Part Status Obsolete
Base Product Number M29W640
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mbit
Memory Organization 8M x 8, 4M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Packaging Tray
Access Time 70 ns

Visão Geral

Description

The M29W640FB70N6E is a specific model of flash memory manufactured by Micron Technology. It belongs to the M29W series, known for its non-volatile memory solutions which are used to store data even when the power is turned off. This model offers a storage capacity of 64 megabits and utilizes a NOR flash architecture, which is advantageous for applications requiring fast read speeds and execute-in-place (XIP) capabilities.
The "70N6E" in its designation typically refers to specific operational characteristics, such as speed, package type, and temperature range, though detailed datasheet information would be needed for precise specifications. NOR flash like the M29W640FB70N6E is commonly used in embedded systems, mobile devices, and other applications where reliable data retention and fast read access are critical. Additionally, it supports a supply voltage range that allows for compatibility with various system designs, contributing to its versatility in electronic applications.

Equivalent

The M29W640FB70N6E is a 64 Mbit (8 Mb x 8 or 4 Mb x 16) Flash memory device. Equivalent products include the SST39VF6401B from Microchip, the S29GL064S from Cypress Semiconductor/Infineon, and the MX29LV640EB from Macronix. These products offer similar storage capacities and configurations, though there may be differences in performance specifications, packaging, and additional features. Always check the datasheets for compatibility regarding voltage requirements, pin configurations, and operational characteristics.

Features

The M29W640FB70N6E is a 64 Mbit (8 Mb x 8 or 4 Mb x 16) Flash memory device. Key features include:
1. Architecture: It features a single power supply for program, erase, and read operations, and supports asynchronous page read and page program.
2. Performance: Offers fast access times, typically with a read access time of 70 ns.
3. Memory Organization: Configurable in either 8-bit or 16-bit modes, allowing flexibility in system design.
4. Sector Protection: Includes hardware write protection and a block protection scheme to prevent accidental programming or erasure.
5. Erase and Program: Features a typical byte program time of 10 microseconds and sector erase time of 1 second.
6. Endurance and Retention: Provides a minimum of 100,000 program/erase cycles per block with data retention of 20 years.
7. Temperature Range: Operates effectively over a commercial temperature range of 0°C to +70°C.
8. Package: Available in a 48-pin TSOP (Thin Small Outline Package), which is space-efficient for various applications.
These features make the M29W640FB70N6E suitable for embedded applications requiring reliable and fast non-volatile memory.

Pinout

The M29W640FB70N6E is a 64 Mbit (8Mb x 8 or 4Mb x 16) Flash memory device from STMicroelectronics. It is commonly used for data storage in embedded systems and offers a range of features suitable for many applications.
Pin Count:
The M29W640FB70N6E comes in a 48-pin TSOP (Thin Small Outline Package).
Key Functions:
1. Data Bus Width: It supports both 8-bit and 16-bit data buses, allowing flexible integration depending on system requirements.
2. Access Time: The device provides a fast access time of 70ns, enabling quick read operations.
3. Block Architecture: It features uniform 64-Kbyte/32-Kword blocks which allow easy storage management.
4. Erase and Program: Supports sector erase and byte/word program operations, making it versatile for various storage applications.
5. Protection: Includes hardware and software data protection to prevent accidental erase or program operations.
6. Low-Power Operation: Optimized for low power consumption, making it suitable for battery-powered devices.
These features make the M29W640FB70N6E ideal for a wide range of applications that require reliable, non-volatile storage.

Manufacturer

The M29W640FB70N6E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is known for producing a variety of integrated circuits and discrete devices used in different electronic applications, including microcontrollers, sensors, power management components, and memory devices. STMicroelectronics serves diverse markets such as consumer electronics, automotive, industrial, and telecommunications, making it a key player in the semiconductor industry.

Application

The M29W640FB70N6E is a 64 Mbit (8 Mb × 8 or 4 Mb × 16) Flash memory chip that is commonly used in applications requiring non-volatile storage. Key application areas include:
1. Embedded Systems: Used in microcontrollers and processors for storing firmware and software updates.
2. Consumer Electronics: Found in devices like digital cameras and multimedia players for storing user data and media.
3. Networking Equipment: Utilized in routers and switches for storing configuration data and firmware.
4. Automotive Systems: Used in infotainment systems and electronic control units (ECUs) for maintaining reliable data storage.
5. Industrial Automation: Employed in PLCs and HMIs for program storage and data logging.
These applications benefit from the chip's fast read/write speeds and reliability.

Package

The M29W640FB70N6E is a 64 Mbit (8Mb x8 or 4Mb x16) Flash memory chip with a 70 ns access time. It typically comes in a TSOP (Thin Small Outline Package) with 48 pins, which is suitable for surface mounting on circuit boards.

Frequently Asked Questions


Q: What is the voltage supply range for the M29W640FB70N6E?
A: The device requires a single power supply of 2.7V to 3.6V, making it suitable for standard 3V applications.


Q: What is the memory organization of this NOR Flash?
A: It is organized as 8M x8 or 4M x16, providing flexible data bus width for system integration.


Q: What is the access time and write cycle time?
A: It features a 70ns access time and a 70ns write cycle time per word or page, ensuring fast read/write operations.


Q: What type of interface does this component use?
A: It uses a parallel memory interface, common for legacy and high-reliability embedded system designs.


Q: Is the M29W640FB70N6E suitable for harsh environments?
A: Yes, it operates over an industrial temperature range of -40°C to +85°C, ensuring reliability in demanding conditions.


Q: What is the package type and mounting style?
A: It comes in a 48-lead TSOP (Thin Small Outline Package) for surface mount assembly, specifically the 48-TSOP form factor.


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