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M29W640GT70NA6E
+Lista de MateriaisIC FLASH 64MBIT PAR 48TSOP I
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FabricanteMicron Technology Inc.
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Peça do Fabricante #M29W640GT70NA6E
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Em Estoque6638
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Digi Key Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mbit |
| Memory Organization | 8M x 8, 4M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | M29W640 |
| Access Time | 70 ns |
Visão Geral
Description
Key features include:
- Architecture: NOR Flash memory enables random access, making it suitable for executing code directly from the memory (XIP).
- Read/Write Endurance: Typically supports around 10,000 write/erase cycles.
- Data Retention: Offers data retention of up to 20 years.
- Package: Available in various package types, like TSOP and BGA.
Its integration into devices allows for flexible storage options, high-speed data access, and the ability to update firmware without needing physical access to the hardware.
Equivalent
1. M29W640FT70N6E - similar features with different performance specs.
2. S29GL064N - another 64Mb NOR Flash from Spansion.
3. W18N64V - from Winbond, with compatible specs.
4. NM29W640GT - a variant from NXP.
Always verify pin configuration and electrical specifications before substituting.
Features
1. Architecture: It utilizes a NAND Flash memory architecture, ensuring faster data access and efficient storage.
2. Interface: The device supports a parallel interface, facilitating easy integration with microcontrollers and processors.
3. Speed: Operating at a maximum frequency of 70 ns, it provides rapid read and write access times.
4. Voltage: It operates with a supply voltage range of 2.7V to 3.6V, making it suitable for low-power applications.
5. Endurance: The M29W640GT can endure up to 1 million program/erase cycles, ensuring long-term reliability.
6. Data Retention: It offers a data retention period of up to 20 years, safeguarding stored information.
7. Package Options: Available in various packages, such as TSOP and BGA, catering to different design requirements.
Ideal for consumer electronics, automotive applications, and industrial use, the M29W640GT70NA6E combines efficiency with robust performance.
Pinout
Pin Count: 48 pins
Function: The M29W640GT70NA6E is designed for high-performance applications and is used for data storage in various electronic devices. Its primary functions include:
- Data Storage: Retains data without power.
- Read/Write Operations: Supports multiple read and write cycles, enabling data to be written and erased.
- Block Erase: Allows erasing of data in specified blocks instead of the entire chip.
- Interface: Utilizes a parallel interface for communication with microcontrollers and other devices.
Overall, it is widely used in embedded systems, consumer electronics, and automotive applications.