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M29W800DB45N6E
+Lista de MateriaisIC FLASH 8MBIT PARALLEL 48TSOP
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FabricanteMicron Technology Inc.
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Peça do Fabricante #M29W800DB45N6E
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Pacote TSOP-48
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Em Estoque3373
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Especificações
| Atributo | Valor |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mb (1M x 8, 512K x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the M29W800DB45N6E include a fast access time, typically around 45 nanoseconds, and a boot block architecture that supports both top and bottom boot, allowing for flexible memory management. It also incorporates a hardware reset pin for device initialization and a block protection mechanism to prevent accidental erasure or programming.
The device's Enhanced Data Protection features make it reliable for storing critical data, and it supports common Flash commands for ease of integration. The M29W800DB45N6E is available in a TSOP48 package, making it suitable for space-constrained applications. Its reliability and versatility make it a popular choice for various electronic devices.
Equivalent
Features
1. Density and Organization: 8 Megabit capacity organized as 1M x 8 or 512K x 16.
2. Architecture: Dual bank memory for simultaneous Read-While-Write operations.
3. Performance: Fast access time of 45 ns.
4. Voltage: Operates at 2.7V to 3.6V for read operations, and program/erase operations.
5. Write and Erase: Fast program and erase times with support for sector erase.
6. Interface: Uses a parallel interface for data reading and writing.
7. Security: Features a hardware write protection mechanism and a block protection feature to safeguard data.
8. Endurance: Supports a high number of program/erase cycles.
9. Packaging: Available in a 48-pin TSOP (Thin Small Outline Package).
These features make it suitable for applications requiring reliable and high-speed data storage such as embedded systems, automotive, and industrial electronics.
Pinout
- Address Inputs (A0-A18): Used to select the address of the memory location.
- Data Inputs/Outputs (DQ0-DQ15): Used for data input and output.
- Chip Enable (E#): Enables the device when low.
- Output Enable (G#): Enables data output when low.
- Write Enable (W#): When low, allows data to be written to the memory.
- Reset (RP#): Resets the device when low.
- Write Protect (WP#): Provides a hardware method of protecting the highest or lowest boot block.
- VCC: Power supply input.
- VSS: Ground.
The M29W800DB45N6E is used in applications requiring non-volatile, high-density flash memory, such as in embedded systems and other digital electronics.