MCR12DSMT4G

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MCR12DSMT4G

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SCR 600V 12A DPAK

  • FabricanteLittelfuse Inc.

  • Peça do Fabricante #MCR12DSMT4G

  • Pacote TO-252-3

  • Em Estoque28814

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Especificações

Atributo Valor
Supplier Littelfuse Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
Voltage-OffState 600 V
Voltage-GateTrigger(Vgt)(Max) 1 V
Current-GateTrigger(Igt)(Max) 200 µA
Voltage-OnState(Vtm)(Max) 1.9 V
Current-OnState(It(AV))(Max) 7.6 A
Current-OnState(It(RMS))(Max) 12 A
Current-Hold(Ih)(Max) 6 mA
Current-OffState(Max) 10 µA
Current-NonRepSurge5060Hz(Itsm) 100A @ 60Hz
SCRType Sensitive Gate
OperatingTemperature -40°C ~ 110°C
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Visão Geral

Description

The MCR12DSMT4G is a dual N-channel MOSFET, part of ON Semiconductor's MOSFET series, designed for use in low power switching applications. It features a high-speed switching capability and low ON-resistance, making it ideal for efficient power management in various electronic devices. The device is housed in a compact SOT-23 package, which is suitable for space-constrained applications.
Key specifications of the MCR12DSMT4G include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of 500mA. It also boasts a gate-source threshold voltage (V_GS(th)) of 1V to 3V, ensuring compatibility with low voltage digital circuits. The MOSFET's low gate charge and fast switching speeds contribute to reduced power loss and improved performance in high-frequency applications.
Overall, the MCR12DSMT4G is valued for its reliability, compact form factor, and efficiency, making it a suitable choice for designers looking to optimize their power management solutions in consumer electronics, portable devices, and other applications requiring efficient switching.

Equivalent

The MCR12DSMT4G is a 12A, 800V surface-mount rectifier diode. Equivalent products include:
1. ON Semiconductor MCR12DSMT4 - alternative packaging.
2. Littelfuse S8012x Series - similar specifications in SCRs.
3. STMicroelectronics TN12 series - similar rating SCRs.
4. Vishay VS-12TTS08-M3 - comparable high voltage diodes.

Ensure compatibility by reviewing datasheets for specific electrical and thermal parameters.

Features

The MCR12DSMT4G is a Schottky Barrier Diode known for its efficiency in various electronic applications. Key features include:
1. Low Forward Voltage Drop: This reduces power loss and improves efficiency.
2. Fast Switching Speed: Ideal for high-speed operations, enhancing performance in switching applications.
3. Guard Ring Protection: Offers improved reliability and performance by preventing premature breakdown.
4. High Surge Capability: Able to handle high current surges, providing robustness in demanding conditions.
5. Small Package: Comes in a compact surface-mount package (SOD-123), saving space on circuit boards.
6. Low Capacitance: This characteristic minimizes interference in high-frequency applications.
7. Wide Temperature Range: Suitable for use in extreme environments.
These features make the MCR12DSMT4G suitable for use in power management, automotive, and communication systems where efficiency and reliability are critical.

Pinout

The MCR12DSMT4G is a silicon-controlled rectifier (SCR) manufactured by ON Semiconductor. It typically comes in a DPAK surface-mount package, which suggests that it has a 3-pin configuration.
Here are the pin functions:
1. Anode - This is the positive side of the SCR through which the main current enters.
2. Cathode - This is the negative side through which the main current exits.
3. Gate - This is the control terminal used to trigger the SCR into conduction.
The MCR12DSMT4G is used in various applications such as motor control, light dimmers, and power switching circuits. It is designed to handle medium power levels and provides reliable performance in switching applications.

Manufacturer

The MCR12DSMT4G is manufactured by ON Semiconductor. ON Semiconductor is a leading global supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company provides a comprehensive range of products, including power and signal management, logic, discrete, and custom devices. These components are used in various applications across different sectors, such as automotive, industrial, consumer electronics, computing, and communications. ON Semiconductor is known for its commitment to sustainable practices and innovation in the semiconductor industry.

Application

The MCR12DSMT4G is a medium power NPN bipolar junction transistor commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Used in switching applications due to its fast switching capabilities.
2. Amplifiers: Suitable for audio and other signal amplification tasks due to its low noise characteristics.
3. Motor Drivers: Employed in driving small motors in robotics and automation.
4. Signal Processing: Utilized in processing analog signals in communication devices.
5. Power Management: Plays a role in voltage regulation and power supply circuits.
These applications leverage the transistor's ability to handle moderate power levels and operate efficiently in various electronic systems.

Package

The MCR12DSMT4G is a surface-mount device (SMD) package type. It is specifically designed for space-saving applications, providing a compact form factor suitable for high-density electronic circuits.

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