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MGSF1N02LT1G
+Lista de MateriaisMOSFET N-CH 20V 750MA SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #MGSF1N02LT1G
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Ficha Técnica MGSF1N02LT1G DataSheet
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Especificações
| Atributo | Valor |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 750mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 1.2A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 250µA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 125 pF @ 5 V |
| PowerDissipation(Max) | 400mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
The MGSF1N02LT1G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching applications. Manufactured by ON Semiconductor, it is known for its small size and efficient performance, making it suitable for space-constrained applications.
Key features of the MGSF1N02LT1G include:
1. Low On-Resistance: It has a low on-resistance, which minimizes power loss and enhances efficiency in electronic circuits.
2. Fast Switching Speed: The MOSFET offers rapid switching capabilities, which is ideal for high-speed applications.
3. Compact Package: It is available in a compact SOT-23 package, facilitating easy integration into circuit boards with limited space.
4. Voltage and Current Ratings: Typically, it supports a drain-source voltage (V_DS) of up to 20V and a continuous drain current (I_D) of around 1A, suitable for low to moderate power applications.
These characteristics make the MGSF1N02LT1G an excellent choice for applications in power management, load switching, and signal processing tasks in consumer electronics, automotive, and industrial devices.
Key features of the MGSF1N02LT1G include:
1. Low On-Resistance: It has a low on-resistance, which minimizes power loss and enhances efficiency in electronic circuits.
2. Fast Switching Speed: The MOSFET offers rapid switching capabilities, which is ideal for high-speed applications.
3. Compact Package: It is available in a compact SOT-23 package, facilitating easy integration into circuit boards with limited space.
4. Voltage and Current Ratings: Typically, it supports a drain-source voltage (V_DS) of up to 20V and a continuous drain current (I_D) of around 1A, suitable for low to moderate power applications.
These characteristics make the MGSF1N02LT1G an excellent choice for applications in power management, load switching, and signal processing tasks in consumer electronics, automotive, and industrial devices.
Equivalent
The MGSF1N02LT1G is a MOSFET commonly used for switching applications. Equivalent products include the 2N7002, BSS138, and BS170 MOSFETs. When selecting an equivalent, ensure that the voltage, current ratings, and package type (SOT-23 for MGSF1N02LT1G) match your requirements. It's also advisable to review the specific parameters like Rds(on) and threshold voltage to ensure compatibility with your application.
Features
The MGSF1N02LT1G is an N-channel MOSFET designed for low voltage applications. Here are its key features:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of 20V and a continuous drain current (I_D) of approximately 1A, making it suitable for low-power applications.
2. R_DS(on): It offers low on-resistance, which is approximately 0.35 ohms at a gate-source voltage (V_GS) of 4.5V, ensuring efficient current conduction with minimal power loss.
3. Gate Threshold Voltage: The gate threshold voltage is typically around 1V, allowing the MOSFET to be easily driven by low voltage signals.
4. Package: It is commonly available in a compact SOT-23 package, which is ideal for space-constrained designs.
5. Switching Speed: The device provides fast switching speeds, which is beneficial for high-speed digital applications.
6. Operating Temperature: It operates efficiently over a wide temperature range, typically from -55°C to 150°C, enhancing its reliability in various environments.
These features make the MGSF1N02LT1G suitable for applications in switching and amplification where low power and compact size are priorities.
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of 20V and a continuous drain current (I_D) of approximately 1A, making it suitable for low-power applications.
2. R_DS(on): It offers low on-resistance, which is approximately 0.35 ohms at a gate-source voltage (V_GS) of 4.5V, ensuring efficient current conduction with minimal power loss.
3. Gate Threshold Voltage: The gate threshold voltage is typically around 1V, allowing the MOSFET to be easily driven by low voltage signals.
4. Package: It is commonly available in a compact SOT-23 package, which is ideal for space-constrained designs.
5. Switching Speed: The device provides fast switching speeds, which is beneficial for high-speed digital applications.
6. Operating Temperature: It operates efficiently over a wide temperature range, typically from -55°C to 150°C, enhancing its reliability in various environments.
These features make the MGSF1N02LT1G suitable for applications in switching and amplification where low power and compact size are priorities.
Pinout
The MGSF1N02LT1G is an N-channel MOSFET. This device comes in a SOT-23 package, which typically has three pins. The pin configuration is as follows:
1. Gate: This pin is used to control the MOSFET and is responsible for turning the device on or off.
2. Source: This pin is connected to the source of electrons (or carriers) from which current enters the channel.
3. Drain: This pin is where the current exits the MOSFET.
The primary function of the MGSF1N02LT1G is to act as a switch or amplifier in electronic circuits. It can handle a maximum drain current of 1 A and is used in applications where low voltage control is needed. This MOSFET is suitable for applications such as switching loads, controlling motors, and in power management circuits due to its low on-resistance and fast switching speed.
1. Gate: This pin is used to control the MOSFET and is responsible for turning the device on or off.
2. Source: This pin is connected to the source of electrons (or carriers) from which current enters the channel.
3. Drain: This pin is where the current exits the MOSFET.
The primary function of the MGSF1N02LT1G is to act as a switch or amplifier in electronic circuits. It can handle a maximum drain current of 1 A and is used in applications where low voltage control is needed. This MOSFET is suitable for applications such as switching loads, controlling motors, and in power management circuits due to its low on-resistance and fast switching speed.
Manufacturer
The MGSF1N02LT1G is manufactured by ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, specializing in energy-efficient electronics. The company provides a broad portfolio of products, including power and signal management, logic, discrete, and custom devices, to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical, and military/aerospace applications. Known for their expertise in power and energy-efficient technologies, ON Semiconductor strives to promote advancements in smart technology and sustainable solutions.
Application
The MGSF1N02LT1G is a MOSFET designed for various applications due to its low on-state resistance and fast switching capabilities. Common application areas include:
1. DC-DC Conversion: Utilized in power supply circuits for efficient energy conversion.
2. Load Switching: Suitable for controlling power to different loads in electronic devices.
3. Motor Drive Circuits: Employed in controlling motors in small electronic devices.
4. Battery Management: Used in battery protection and management circuits to ensure safe operation.
5. Consumer Electronics: Implemented in devices like smartphones and laptops for enhanced power management.
Its compact size and efficiency make it ideal for portable and space-constrained applications.
1. DC-DC Conversion: Utilized in power supply circuits for efficient energy conversion.
2. Load Switching: Suitable for controlling power to different loads in electronic devices.
3. Motor Drive Circuits: Employed in controlling motors in small electronic devices.
4. Battery Management: Used in battery protection and management circuits to ensure safe operation.
5. Consumer Electronics: Implemented in devices like smartphones and laptops for enhanced power management.
Its compact size and efficiency make it ideal for portable and space-constrained applications.
Package
The MGSF1N02LT1G is a MOSFET transistor packaged in a SOT-23 form factor. This package type is small, surface-mount, and commonly used in compact electronic applications.
