MJD45H11T4

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MJD45H11T4

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TRANS PNP 80V 8A DPAK

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 1V @ 400mA, 8A
Current-CollectorCutoff(Max) 10µA
DCCurrentGain(hFE)(Min)@IcVce 40 @ 4A, 1V
Power-Max 20 W
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Visão Geral

Description

The MJD45H11T4 is an NPN bipolar junction transistor (BJT) designed for high-power applications. Key features include:
- High current handling: Up to 8A collector current (IC).
- Voltage rating: 80V collector-emitter voltage (VCEO).
- Power dissipation: 75W (with proper heat sinking).
- Low saturation voltage: Ensures efficient switching.
Applications:
- Power amplifiers
- Motor control
- Voltage regulation
- General-purpose switching
Package: TO-252 (DPAK), suitable for surface-mount PCB designs.
This transistor is robust for medium-to-high-power circuits, offering reliability in demanding environments. Always refer to the datasheet for precise specifications and thermal management guidelines.

Equivalent

The MJD45H11T4 is a PNP bipolar transistor. Equivalent or similar products include:
- MJD44H11T4 (Complementary NPN type)
- TIP42C (General-purpose PNP transistor)
- BD246C (Higher power PNP alternative)
- 2N6039 (PNP Darlington transistor)
Check datasheets for exact specs like voltage, current, and package compatibility before substitution.

Features

The MJD45H11T4 is an NPN Darlington transistor with the following key features:
- High Current Gain (hFE): Typically 1000, ideal for low-drive applications.
- High Collector Current (IC): Up to 8A continuous.
- Voltage Rating (VCEO): 100V, suitable for medium-voltage circuits.
- Low Saturation Voltage (VCE(sat)): ~1.5V at 4A, reducing power loss.
- Power Dissipation (PD): 50W (with heatsink).
- Package: TO-252 (DPAK), compact and surface-mountable.
- Applications: Motor drivers, relays, and power switching.
Compact, efficient, and robust for high-current amplification.

Pinout

The MJD45H11T4 is a PNP power transistor in a TO-252 (DPAK) package with 3 pins:
1. Base (B) – Controls the transistor's switching/amplification.
2. Collector (C) – Main current-carrying terminal (connected to the load).
3. Emitter (E) – Output terminal, typically grounded or connected to the supply.
Key Features:
- Voltage: 80V collector-emitter (VCE).
- Current: 8A continuous collector current (IC).
- Power Dissipation: 40W (with heatsinking).
Applications: Power switching, motor control, and linear amplification.
The TO-252 package is surface-mountable with a thermal pad for heat dissipation.

Application

The MJD45H11T4 is a power transistor commonly used in:
1. Switching Power Supplies – Efficient voltage regulation.
2. Motor Control – Drives DC motors in appliances and automotive systems.
3. Audio Amplifiers – Delivers high current in output stages.
4. LED Drivers – Controls high-power LED lighting.
5. Industrial Automation – Used in relays and solenoids.
Its high current (45A) and voltage (100V) ratings make it suitable for robust applications requiring reliable power handling.

Package

The MJD45H11T4 is a power transistor in a TO-252-3 (DPAK) surface-mount package. It is designed for high-current, high-voltage applications, commonly used in power regulation and switching circuits. The package features a compact design with a thermal pad for efficient heat dissipation.

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