MMBT5551LT1G

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MMBT5551LT1G

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TRANS NPN 160V 0.6A SOT23-3

  • Fabricanteonsemi

  • Peça do Fabricante #MMBT5551LT1G

  • Pacote SOT23-3

  • Em Estoque2356

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 160 V
VceSaturation(Max)@IbIc 200mV @ 5mA, 50mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 80 @ 10mA, 5V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Visão Geral

Description

The MMBT5551LT1G is a general-purpose NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for switching and amplification in low-power applications. Key features include:
- High current gain (hFE) for efficient signal amplification.
- Low saturation voltage, enhancing switching performance.
- Compact SOT-23 package, ideal for space-constrained designs.
- Voltage rating: 160V (VCEO), suitable for moderate-voltage circuits.
- Current rating: 600mA (IC).
Common uses include load switching, signal amplification, and driver stages in consumer electronics, automotive systems, and industrial controls. Its small size and reliability make it a popular choice for PCB designs.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the MMBT5551LT1G (NPN transistor, SOT-23) include:
- 2N5551 (TO-92 package)
- BC847B (SOT-23, similar specs)
- KSC1845 (higher voltage rating)
- PXT5551 (SOT-89, higher power)
- FMMT5551 (SOT-23, comparable specs).
Check datasheets for exact parameter matching.

Features

The MMBT5551LT1G is an NPN bipolar junction transistor (BJT) with the following key features:
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 160V
- Collector-Base Voltage (V_CBO): 180V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Peak Collector Current (I_CM): 1A
- Power Dissipation (P_D): 350mW
- Gain (h_FE): 50–250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications. Compact and efficient for portable electronics.

Pinout

The MMBT5551LT1G is a SOT-23 packaged NPN bipolar transistor with 3 pins (Emitter, Base, Collector).
Key Functions:
- High voltage (160V) switching and amplification.
- Low current (600mA max collector current).
- Fast switching for general-purpose applications.
Pinout (SOT-23):
1. Emitter (E) – Pin 1
2. Base (B) – Pin 2
3. Collector (C) – Pin 3
Commonly used in power management, amplification, and switching circuits.

Application

The MMBT5551LT1G, a general-purpose NPN transistor, is commonly used in:
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Load Drivers – Driving relays, LEDs, or small motors.
4. Signal Processing – Used in oscillators, timers, and pulse generators.
5. Consumer Electronics – Found in TVs, radios, and portable devices.
Its SOT-23 package makes it suitable for compact, low-power designs.

Package

The MMBT5551LT1G is a SOT-23 packaged NPN transistor. This small surface-mount package is widely used for general-purpose amplification and switching applications. The SOT-23 has three leads and is compact, making it suitable for space-constrained PCB designs.

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