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MMBTA56LT1G
+Lista de MateriaisTRANS PNP 80V 0.5A SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #MMBTA56LT1G
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Pacote SOT23-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 50MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Visão Geral
Description
The MMBTA56LT1G is a PNP bipolar junction transistor (BJT) commonly used in low-power amplification and switching applications. Manufactured by ON Semiconductor, this device is designed for use in surface-mount technology (SMT) environments, packaged in a SOT-23 case for compactness and ease of use.
Key specifications of the MMBTA56LT1G include a maximum collector current of 500 mA and a collector-emitter voltage breakdown of 80V. Its power dissipation is rated at 625 mW, making it suitable for a variety of low to medium power applications. The transistor's transition frequency is around 100 MHz, allowing for effective performance in high-frequency circuits.
The MMBTA56LT1G is often chosen for its reliability, cost-effectiveness, and ease of integration into circuits requiring PNP transistors. It's commonly found in signal processing, switching, and general amplification circuits in consumer electronics and industrial equipment. Its small size and SMT compatibility make it ideal for modern electronic designs requiring space efficiency.
Key specifications of the MMBTA56LT1G include a maximum collector current of 500 mA and a collector-emitter voltage breakdown of 80V. Its power dissipation is rated at 625 mW, making it suitable for a variety of low to medium power applications. The transistor's transition frequency is around 100 MHz, allowing for effective performance in high-frequency circuits.
The MMBTA56LT1G is often chosen for its reliability, cost-effectiveness, and ease of integration into circuits requiring PNP transistors. It's commonly found in signal processing, switching, and general amplification circuits in consumer electronics and industrial equipment. Its small size and SMT compatibility make it ideal for modern electronic designs requiring space efficiency.
Equivalent
The MMBTA56LT1G is a PNP bipolar junction transistor. Equivalent products include:
1. BC556
2. 2N5401
3. KSA733
4. 2SA1015Y
5. MMBTA56 (without the LT1G suffix, but similar specifications)
These equivalents may vary slightly in terms of package type, gain, or voltage ratings, so it's essential to check the datasheets for compatibility with specific applications.
1. BC556
2. 2N5401
3. KSA733
4. 2SA1015Y
5. MMBTA56 (without the LT1G suffix, but similar specifications)
These equivalents may vary slightly in terms of package type, gain, or voltage ratings, so it's essential to check the datasheets for compatibility with specific applications.
Features
The MMBTA56LT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Key features of this transistor include:
1. Polarity: PNP
2. Collector-Emitter Voltage (Vceo): -80V
3. Collector-Base Voltage (Vcbo): -80V
4. Emitter-Base Voltage (Vebo): -5V
5. Collector Current (Ic): -500mA
6. Power Dissipation (Pd): 625mW
7. DC Current Gain (hFE): Typically 100-300
8. Package Type: SOT-23, ideal for surface-mount applications
9. Transition Frequency (ft): 50 MHz
10. RoHS Compliance: Yes
The MMBTA56LT1G is suitable for various applications, including switching and amplification in electronic circuits. Its small SOT-23 package makes it well-suited for compact and portable devices.
1. Polarity: PNP
2. Collector-Emitter Voltage (Vceo): -80V
3. Collector-Base Voltage (Vcbo): -80V
4. Emitter-Base Voltage (Vebo): -5V
5. Collector Current (Ic): -500mA
6. Power Dissipation (Pd): 625mW
7. DC Current Gain (hFE): Typically 100-300
8. Package Type: SOT-23, ideal for surface-mount applications
9. Transition Frequency (ft): 50 MHz
10. RoHS Compliance: Yes
The MMBTA56LT1G is suitable for various applications, including switching and amplification in electronic circuits. Its small SOT-23 package makes it well-suited for compact and portable devices.
Pinout
The MMBTA56LT1G is a PNP bipolar junction transistor (BJT) commonly used in switching and amplification applications. It is housed in a SOT-23 package and has three pins. The pin configuration is as follows:
1. Pin 1 (Emitter): The emitter is the region where charge carriers exit the transistor. For a PNP transistor, the emitter is connected to a more positive voltage relative to the base.
2. Pin 2 (Base): The base terminal controls the transistor's operation. A small current flowing into the base allows a larger current to flow from the emitter to the collector.
3. Pin 3 (Collector): The collector is where charge carriers enter the transistor. In a PNP transistor, the collector is connected to a more negative voltage relative to the base.
The MMBTA56LT1G is used for general-purpose amplification and switching, offering moderate current and voltage handling capabilities, typically with a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80 V. It is suitable for low power and surface-mount applications.
1. Pin 1 (Emitter): The emitter is the region where charge carriers exit the transistor. For a PNP transistor, the emitter is connected to a more positive voltage relative to the base.
2. Pin 2 (Base): The base terminal controls the transistor's operation. A small current flowing into the base allows a larger current to flow from the emitter to the collector.
3. Pin 3 (Collector): The collector is where charge carriers enter the transistor. In a PNP transistor, the collector is connected to a more negative voltage relative to the base.
The MMBTA56LT1G is used for general-purpose amplification and switching, offering moderate current and voltage handling capabilities, typically with a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80 V. It is suitable for low power and surface-mount applications.
Manufacturer
The MMBTA56LT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor company that designs, manufactures, and markets a wide range of semiconductor components. These components are used across various applications, including automotive, industrial, consumer electronics, communications, and computing. The company focuses on providing solutions in areas such as power management, analog devices, sensors, logic devices, and discrete components. onsemi is headquartered in Phoenix, Arizona, and is known for its emphasis on energy-efficient electronics and innovative semiconductor solutions.
Application
The MMBTA56LT1G is a PNP bipolar junction transistor (BJT) commonly used in various electronic applications. Its application areas include:
1. Signal Amplification: Used in amplifying low-power audio or radio frequency signals.
2. Switching Applications: Functions as a switch in electronic circuits due to its fast switching capabilities.
3. Voltage Regulation: Incorporated in voltage regulation circuits for stable power supply.
4. Driver Circuits: Utilized in driving loads such as LEDs and relays.
5. Analog Circuits: Plays a role in analog signal processing and conditioning.
6. Automotive Electronics: Employed in automotive circuits for control and switching tasks.
These applications leverage the transistor's high current gain and low collector-emitter saturation voltage.
1. Signal Amplification: Used in amplifying low-power audio or radio frequency signals.
2. Switching Applications: Functions as a switch in electronic circuits due to its fast switching capabilities.
3. Voltage Regulation: Incorporated in voltage regulation circuits for stable power supply.
4. Driver Circuits: Utilized in driving loads such as LEDs and relays.
5. Analog Circuits: Plays a role in analog signal processing and conditioning.
6. Automotive Electronics: Employed in automotive circuits for control and switching tasks.
These applications leverage the transistor's high current gain and low collector-emitter saturation voltage.
Package
The MMBTA56LT1G is a PNP bipolar junction transistor (BJT) that comes in a SOT-23 package. This surface-mount device is commonly used in amplification and switching applications.
