MR25H10CDF

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MR25H10CDF

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IC RAM 1MBIT SPI 40MHZ 8DFN

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Especificações

Atributo Valor
Package / Case Tray
Part Status Active
Memory Type Non-Volatile
Memory Format RAM
Technology MRAM (Magnetoresistive RAM)
Memory Size 1Mb (128K x 8)
Memory Interface SPI
Clock Frequency 40 MHz
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

The MR25H10CDF is a type of non-volatile magnetoresistive random-access memory (MRAM) chip. This memory component is produced by Everspin Technologies and is known for its high-speed data access, low power consumption, and durability. MRAM technology utilizes magnetic states to store data, providing fast read and write speeds, similar to SRAM, while retaining data without the need for a continuous power supply, like flash memory.
The MR25H10CDF has a storage capacity of 1 Megabit (128 Kilobytes) and is organized in a serial SPI (Serial Peripheral Interface) format, which supports high-speed serial communication. It operates within a wide temperature range, making it suitable for industrial applications, and offers data retention for over 20 years with virtually unlimited read/write endurance.
This chip is commonly used in applications where reliable data storage is crucial, such as in automotive systems, industrial controls, and mission-critical computing environments. Its robust performance and energy efficiency make it a preferred choice for systems requiring persistent memory with rapid data access times.

Equivalent

The MR25H10CDF is a Magnetoresistive Random Access Memory (MRAM) chip with 1Mb storage capacity. Equivalent products may include other MRAM chips with similar specifications, such as Everspin's MR10Q010 or products from Avalanche Technology like the P-SRAM 1Mb series, though specific part numbers may vary. Always check datasheets to ensure compatibility in terms of voltage, interface, and package.

Features

The MR25H10CDF is a magnetoresistive random-access memory (MRAM) device. Here are its key features:
1. High Speed: MRAM offers fast read and write speeds comparable to SRAM, allowing for quick data access and storage.
2. Non-Volatile: Unlike traditional RAM, MRAM retains data even when the power is turned off.
3. Endurance: The device supports virtually unlimited read/write cycles, making it highly durable for applications requiring frequent data access.
4. Density and Capacity: The MR25H10CDF typically provides a storage capacity of 1 Megabit.
5. Low Power Consumption: Consumes significantly less power compared to other non-volatile memory types, making it suitable for battery-powered applications.
6. Wide Temperature Range: Operates effectively across a broad temperature range, enhancing reliability in various environmental conditions.
7. Serial Peripheral Interface (SPI): Uses a simple SPI protocol for communication, which simplifies integration into existing systems.
8. Compact Package: The device is available in a space-efficient DFN package (Dual Flat No-leads), which is suitable for compact designs.
These features make the MR25H10CDF suitable for a wide range of applications, including automotive, industrial, and consumer electronics.

Pinout

The MR25H10CDF is a magnetoresistive random-access memory (MRAM) device. This particular model typically comes in an 8-pin DFN (Dual Flat No-leads) package. The pin functions are generally as follows:
1. CS (Chip Select): Activates the device when low.
2. SO (Serial Output): Outputs data from the device.
3. WP (Write Protect): Disables all write operations to the memory if low.
4. VSS (Ground): Ground reference for the device.
5. SI (Serial Input): Inputs data into the device.
6. SCK (Serial Clock): Provides the clock for SPI operations.
7. HOLD: Pauses communication while maintaining the current operation.
8. VCC: Power supply for the device.
These pins facilitate the MRAM's SPI (Serial Peripheral Interface) operation, allowing communication with a microcontroller or other digital systems. The MR25H10CDF is known for its non-volatility, high speed, and endurance in data storage applications.

Manufacturer

The MR25H10CDF is manufactured by Everspin Technologies, Inc. Everspin is a company that specializes in developing and manufacturing magnetic random-access memory (MRAM) products. MRAM is a type of non-volatile memory technology that retains data without power, combining the speed of SRAM and the non-volatility of flash memory. Everspin is recognized for pioneering advancements in MRAM technology and provides solutions that are used in various applications, including industrial, automotive, and enterprise storage sectors. The company is known for its focus on high-performance, reliable memory solutions that offer endurance and fast write/read speeds, catering to markets that require robust data retention and quick access times.

Application

The MR25H10CDF is a magnetoresistive random-access memory (MRAM) chip. Its application areas include industrial automation, automotive electronics, and consumer electronics. In industrial automation, it is used for data logging and configuration storage due to its non-volatility and fast write speeds. In automotive electronics, it provides reliable data storage in harsh environments, such as for infotainment systems and electronic control units. In consumer electronics, it is used in wearables and IoT devices for its low power consumption and durability. Additionally, it is suitable for applications requiring frequent data retention without power, such as energy metering and medical devices.

Package

The MR25H10CDF is a magnetoresistive random-access memory (MRAM) chip. It typically comes in an 8-lead DFN (Dual Flat No-leads) package, which is a compact and surface-mount package type used for efficient board space usage.

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