MT25QU01GBBB8ESF-0AAT

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MT25QU01GBBB8ESF-0AAT

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IC FLASH 1GBIT SPI 133MHZ 16SOP2

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT25QU01GBBB8ESF-0AAT

  • Em Estoque3544

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Especificações

Atributo Valor
Part Status Last Time Buy
Base Product Number MT25QU01
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOP2
Packaging Tray
Grade Automotive
Qualification AEC-Q100

Visão Geral

Description

The MT25QU01GBBB8ESF-0AAT is a high-performance NOR Flash memory device manufactured by Micron Technology. It features a capacity of 1 Gigabit, making it suitable for a variety of applications that require reliable and efficient data storage. This device is part of the MT25Q family, which is known for its fast read and write speeds, low power consumption, and robust data retention capabilities.
The MT25QU01GBBB8ESF-0AAT supports a wide range of functions, including standard, dual, and quad SPI operations, which enhance its versatility in embedded systems. It operates at a voltage range of 2.7V to 3.6V and is packaged in an 8-pin SOP (Small Outline Package), making it compact and easy to integrate into various electronic designs.
This memory device is ideal for applications in sectors such as automotive, industrial, and consumer electronics, where reliability and efficiency are critical. Its advanced features and specifications ensure high performance, making it a dependable choice for developers and engineers seeking effective storage solutions.

Equivalent

The MT25QU01GBBB8ESF-0AAT is a 1Gb NOR Flash memory chip by Micron Technology. Equivalent products from other manufacturers might include the W25Q128JV from Winbond, the S25FL128SAGMFI000 from Cypress (now part of Infineon), and the MX25L12835F from Macronix. Ensure compatibility by checking specifications like memory size, interface type, and operating voltage when considering alternatives.

Features

The MT25QU01GBBB8ESF-0AAT is a high-performance NOR Flash memory device from Micron Technology. Key features include:
1. Storage Capacity: 1 Gb (gigabit).
2. Interface: Supports multiple I/O interfaces, including Quad I/O SPI, enhancing data transfer speeds.
3. Performance: Offers fast read and program/erase operations, suitable for high-speed applications.
4. Voltage Range: Operates at a wide voltage range, typically between 2.7V to 3.6V.
5. Security: Features security mechanisms such as block protection, password protection, and hardware-controlled data protection.
6. Endurance and Data Retention: High endurance with reliable data retention capability, ensuring data integrity over extended periods.
7. Package Type: Available in various compact packages suitable for space-constrained applications.
8. Temperature Range: Designed to operate over a wide temperature range for industrial applications.
These features make it suitable for applications in automotive, industrial, and consumer electronics that require reliable non-volatile memory solutions.

Pinout

The MT25QU01GBBB8ESF-0AAT is a serial NOR Flash memory device manufactured by Micron Technology. It typically comes in an 8-pad WSON package, which is a compact form factor. The device features 8 pins, with the primary functions of these pins as follows:
1. S# (Chip Select): Activates the device when pulled low.
2. C (Clock): Synchronizes data movement on the interface.
3. DQ0 (Serial Data Input/Output): Bidirectional data pin.
4. DQ1 (Serial Data Input/Output): Bidirectional data pin, used in dual and quad I/O modes.
5. Vcc (Supply Voltage): Powers the device.
6. Vss (Ground): Ground reference for the device.
7. DQ2 (Serial Data Input/Output): Additional bidirectional data pin for quad I/O.
8. DQ3 (Serial Data Input/Output): Additional bidirectional data pin for quad I/O.
The MT25QU01GBBB8ESF-0AAT supports various read, write, and erase functions, and is commonly used in embedded systems for code storage and data logging.

Manufacturer

The MT25QU01GBBB8ESF-0AAT is a product manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. Their product lineup includes DRAM, NAND flash memory, and other semiconductor components that are used in computers, consumer electronics, and various industrial applications.
Micron is a key player in the global memory and semiconductor industry, known for its technological innovation and contribution to advancing the performance and efficiency of electronic devices. They provide solutions that are critical for data storage, processing, and management, making them essential for numerous sectors such as computing, mobile, automotive, and data centers. The company's expertise lies in delivering high-quality and reliable memory technologies that support the growing demands for data and connectivity worldwide.

Application

The MT25QU01GBBB8ESF-0AAT is a Quad SPI NOR Flash memory device typically used in applications that require reliable, high-speed data storage with low power consumption. Common application areas include:
1. Consumer Electronics: Used in smart TVs, set-top boxes, and gaming consoles.
2. Industrial: Applied in control systems, automation, and monitoring equipment.
3. Automotive: Suitable for infotainment systems, ADAS (Advanced Driver-Assistance Systems), and digital instrument clusters.
4. Networking: Utilized in routers, switches, and other networking equipment.
5. IoT Devices: Essential for firmware storage and updates in smart devices and sensors.
These applications benefit from the device's fast read speeds, robust performance, and extended temperature range.

Package

The MT25QU01GBBB8ESF-0AAT is a serial NOR Flash memory package. It typically comes in a WSON (Wafer Level Chip Scale Package) with 8 contact pads, which is compact and suitable for space-constrained applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT25QU01GBBB8ESF-0AAT?
A: It offers 1Gbit density, organized as 128M x 8 bits, suitable for high-density code or data storage.


Q: Which memory interface does this NOR Flash support?
A: It supports SPI with Quad I/O interface, enabling high-speed data transfer up to 133 MHz clock frequency.


Q: What is the operating voltage range for this component?
A: It operates at a low voltage range of 1.7V to 2V, ideal for power-sensitive automotive designs.


Q: What are the typical write cycle times for page and word operations?
A: Write cycle times are 8ms per word and 2.8ms per page, ensuring efficient programming.


Q: Is this device qualified for automotive applications?
A: Yes, it is AEC-Q100 qualified and rated for automotive-grade operation from -40°C to 105°C.


Q: Can I use this part for high-reliability embedded systems?
A: Yes, as a non-volatile NOR Flash, it provides reliable code storage with fast random access and long data retention.


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