MT28EW01GABA1LJS-0SIT

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MT28EW01GABA1LJS-0SIT

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IC FLASH 1GBIT PARALLEL 56TSOP

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT28EW01GABA1LJS-0SIT

  • Em Estoque6998

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Especificações

Atributo Valor
PartStatus Active
BaseProductNumber MT28EW01
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 1Gbit
MemoryOrganization 128M x 8, 64M x 16
MemoryInterface Parallel
WriteCycleTime-Word,Page 60ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
SupplierDevicePackage 56-TSOP
Packaging Tray
AccessTime 95 ns

Visão Geral

Description

The MT28EW01GABA1LJS-0SIT is a NAND Flash memory component produced by Micron Technology. It is designed for use in a variety of applications, such as mobile devices, computing, and embedded systems, where reliable and efficient data storage is required. This particular memory module offers a storage capacity of 1Gb and is built using advanced semiconductor technology to ensure high performance and durability.
Key features of the MT28EW01GABA1LJS-0SIT include fast read and write speeds, low power consumption, and robust data retention. It supports standard NAND Flash interfaces, making it compatible with a wide range of devices and systems. Additionally, the module is designed to operate reliably in various environmental conditions, thanks to its industrial-grade specifications.
The MT28EW01GABA1LJS-0SIT is part of Micron’s well-regarded line of Flash memory products, recognized for their quality and performance. Its versatility and reliability make it suitable for both consumer and industrial applications, providing a dependable solution for data storage needs.

Equivalent

The MT28EW01GABA1LJS-0SIT chip is a 1Gb NOR Flash memory from Micron. Equivalent products could include NOR Flash memory chips with similar specifications from other manufacturers, such as the S29GL01GT from Cypress/Spansion, and the W25Q80DV series from Winbond. When considering equivalents, ensure the product matches in terms of storage capacity, interface, voltage, and operating temperature. Always verify compatibility with your specific application requirements.

Features

The MT28EW01GABA1LJS-0SIT is a NAND Flash memory chip by Micron, designed for robust data storage solutions. Key features include a 128Gb (16GB) storage capacity and a high-performance interface, allowing for efficient data handling. It operates on a 3.3V power supply, ensuring compatibility with a wide range of devices and systems.
The chip features a Toggle DDR 2.0 interface, which enhances data transfer speeds and overall performance. It supports advanced error correction capabilities to maintain data integrity and reliability over time. The MT28EW01GABA1LJS-0SIT also includes features like wear leveling and bad block management, which extend the lifespan of the memory by distributing write and erase cycles evenly across the memory cells.
Additionally, it comes in a compact, space-saving package, making it suitable for use in various applications such as consumer electronics, industrial devices, and automotive systems. This NAND Flash is designed to operate across a wide temperature range, offering versatility and durability in different environments.

Pinout

The MT28EW01GABA1LJS-0SIT is a NOR Flash memory device from Micron. It operates as a non-volatile storage solution with 1 Gb (gigabit) capacity. This particular model is provided in an 8-word (16-byte) page and utilizes asynchronous read operation.
The device typically comes in an FBGA package with 56 pins. The functions of these pins include:
- Address Inputs (A0-Amax): Used to specify the memory location to be accessed.
- Data Inputs/Outputs (DQ0-DQ15): Bidirectional pins used for inputting commands and data and outputting data from the memory.
- Chip Enable (CE#): Enables or disables the device.
- Output Enable (OE#): Controls data output during read operations.
- Write Enable (WE#): Controls writing data to the memory.
- Reset (RESET#): Resets the device to its default state.
- VCC and VSS: Supply voltage and ground.
- VIO: Voltage for input/output operations.
Additional control pins might include Ready/Busy (RY/BY#) and Write Protect (WP#), which manage the device's operational status and protect data integrity.

Manufacturer

The MT28EW01GABA1LJS-0SIT is manufactured by Micron Technology, Inc. Micron is a leading global company in the semiconductor industry, specializing in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops and manufactures a wide range of products, including DRAM, NAND, NOR, and 3D XPoint memory technologies. These products are used in various applications such as computing, networking, data centers, mobile, automotive, and consumer electronics. Micron is known for its innovation in memory solutions and is one of the largest memory manufacturers in the world.

Application

The MT28EW01GABA1LJS-0SIT is a NAND flash memory device, commonly used in various applications due to its high-density data storage capabilities. It is typically employed in consumer electronics like smartphones, tablets, and digital cameras for storing operating systems, application data, and multimedia files. In industrial and automotive sectors, it is used for data logging, firmware storage, and system boot operations. Additionally, it plays a crucial role in enterprise computing environments within solid-state drives (SSDs) for fast and reliable data access and storage. Its versatility in managing large volumes of data makes it suitable for any application requiring robust and scalable non-volatile memory solutions.

Package

The MT28EW01GABA1LJS-0SIT is a NAND Flash memory component typically in a Ball Grid Array (BGA) package. This type of package is used for its compact size and effective heat dissipation, making it suitable for use in mobile devices and other space-constrained applications.

Frequently Asked Questions


Q: What is the memory density and organization of this NOR Flash?
A: It has a 1Gbit density, organized as 128M x 8 or 64M x 16 via a parallel interface.


Q: What is the typical access time for read operations?
A: The random access time is 95 ns, ensuring high-speed data retrieval.


Q: What voltage supply range does this component support?
A: It operates from a single 2.7V to 3.6V power supply, suitable for standard 3V systems.


Q: Is this device suitable for extreme temperature environments?
A: Yes, it is rated for an industrial temperature range of -40°C to +85°C.


Q: What is the page or word write cycle time?
A: The typical write cycle time is 60ns for both word and page programming.


Q: What package options are available for this NOR Flash?
A: It comes in a 56-lead TSOP (TFSOP) surface-mount package, 18.40mm width.


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