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MT28EW01GABA1LJS-0SIT
+Lista de MateriaisIC FLASH 1GBIT PARALLEL 56TSOP
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT28EW01GABA1LJS-0SIT
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Em Estoque6998
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Especificações
| Atributo | Valor |
| PartStatus | Active |
| BaseProductNumber | MT28EW01 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 1Gbit |
| MemoryOrganization | 128M x 8, 64M x 16 |
| MemoryInterface | Parallel |
| WriteCycleTime-Word,Page | 60ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| SupplierDevicePackage | 56-TSOP |
| Packaging | Tray |
| AccessTime | 95 ns |
Visão Geral
Description
Key features of the MT28EW01GABA1LJS-0SIT include fast read and write speeds, low power consumption, and robust data retention. It supports standard NAND Flash interfaces, making it compatible with a wide range of devices and systems. Additionally, the module is designed to operate reliably in various environmental conditions, thanks to its industrial-grade specifications.
The MT28EW01GABA1LJS-0SIT is part of Micron’s well-regarded line of Flash memory products, recognized for their quality and performance. Its versatility and reliability make it suitable for both consumer and industrial applications, providing a dependable solution for data storage needs.
Equivalent
Features
The chip features a Toggle DDR 2.0 interface, which enhances data transfer speeds and overall performance. It supports advanced error correction capabilities to maintain data integrity and reliability over time. The MT28EW01GABA1LJS-0SIT also includes features like wear leveling and bad block management, which extend the lifespan of the memory by distributing write and erase cycles evenly across the memory cells.
Additionally, it comes in a compact, space-saving package, making it suitable for use in various applications such as consumer electronics, industrial devices, and automotive systems. This NAND Flash is designed to operate across a wide temperature range, offering versatility and durability in different environments.
Pinout
The device typically comes in an FBGA package with 56 pins. The functions of these pins include:
- Address Inputs (A0-Amax): Used to specify the memory location to be accessed.
- Data Inputs/Outputs (DQ0-DQ15): Bidirectional pins used for inputting commands and data and outputting data from the memory.
- Chip Enable (CE#): Enables or disables the device.
- Output Enable (OE#): Controls data output during read operations.
- Write Enable (WE#): Controls writing data to the memory.
- Reset (RESET#): Resets the device to its default state.
- VCC and VSS: Supply voltage and ground.
- VIO: Voltage for input/output operations.
Additional control pins might include Ready/Busy (RY/BY#) and Write Protect (WP#), which manage the device's operational status and protect data integrity.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of this NOR Flash?
A: It has a 1Gbit density, organized as 128M x 8 or 64M x 16 via a parallel interface.
Q: What is the typical access time for read operations?
A: The random access time is 95 ns, ensuring high-speed data retrieval.
Q: What voltage supply range does this component support?
A: It operates from a single 2.7V to 3.6V power supply, suitable for standard 3V systems.
Q: Is this device suitable for extreme temperature environments?
A: Yes, it is rated for an industrial temperature range of -40°C to +85°C.
Q: What is the page or word write cycle time?
A: The typical write cycle time is 60ns for both word and page programming.
Q: What package options are available for this NOR Flash?
A: It comes in a 56-lead TSOP (TFSOP) surface-mount package, 18.40mm width.