MT28EW128ABA1LJS-0SIT

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MT28EW128ABA1LJS-0SIT

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IC FLASH 128MBIT PARALLEL 56TSOP

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT28EW128ABA1LJS-0SIT

  • Em Estoque6259

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Especificações

Atributo Valor
Part Status Active
Base Product Number MT28EW128
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mbit
Memory Organization 16M x 8, 8M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 95 ns

Visão Geral

Description

The MT28EW128ABA1LJS-0SIT is a multi-level cell (MLC) NAND Flash memory device designed by Micron Technology. It offers a storage capacity of 128 megabits and operates within a voltage range of 1.7V to 2.0V, making it suitable for low-power applications. This NAND Flash memory features a parallel interface, enhancing data transfer speeds, and is typically used in various embedded systems, consumer electronics, and industrial applications where reliable and efficient data storage is crucial.
The device is built with advanced error-correction code (ECC) capabilities to ensure data integrity, and it supports a wide range of operational temperatures, making it versatile for different environments. The MT28EW128ABA1LJS-0SIT is also compliant with industry-standard commands and protocols, facilitating easier integration into existing systems.
Its compact design and robust performance make it an ideal choice for applications requiring reliable storage solutions with moderate capacity. Additionally, its architecture is optimized for both read and write operations, providing a balanced performance for different types of data handling requirements.

Equivalent

The MT28EW128ABA1LJS-0SIT is a 128Mb parallel NOR Flash memory chip. Equivalent products are from manufacturers like Cypress (now Infineon), Macronix, and Winbond, featuring similar NOR Flash memory with parallel interfaces and comparable densities. Specific model equivalents might include Cypress’s S29GL128P series or Macronix’s MX29GL128F series. Always ensure that the selected equivalent meets the exact specifications needed for your application, including voltage, speed, and package type.

Features

The MT28EW128ABA1LJS-0SIT is a 128Mb parallel NOR Flash memory produced by Micron Technology. It features a versatile architecture that ensures high performance and reliability. Key features include an x8/x16 data bus interface, a 3V power supply for core and I/O operations, and a high-speed read capability that enhances data access efficiency. The device supports a wide operating temperature range, making it suitable for various industrial applications. It also offers a sector-based architecture with uniform 64KB sectors for flexible data management. Advanced security features include hardware and software write protection to ensure data integrity. The memory is compatible with standard interface protocols, simplifying integration into existing systems. Its low power consumption modes, such as standby and deep power-down, contribute to energy efficiency. The MT28EW128ABA1LJS-0SIT is ideal for applications requiring robust memory solutions, including embedded systems, automotive, and telecommunications.

Pinout

The MT28EW128ABA1LJS-0SIT is a 128Mb (megabit) parallel NOR flash memory device manufactured by Micron Technology. This chip typically features a 56-pin TSOP (Thin Small Outline Package) type I layout. The primary functions of this NOR flash memory include storing firmware such as boot code, microcontroller programs, and other data that require fast read speeds and reliable non-volatility.
Key functions of the pins include:
- Address Pins (A0-A21): These pins are used to select memory locations within the chip.
- Data Pins (DQ0-DQ15): These pins facilitate data input and output operations.
- Chip Enable (CE#): This pin activates the memory device.
- Output Enable (OE#): This pin controls the output buffer.
- Write Enable (WE#): This pin is used to write data to the memory array.
- Reset (RESET#): This pin resets the device.
- Write Protect (WP#): This pin protects the memory from accidental writes.
- Ready/Busy (RY/BY#): This pin indicates the status of the device, whether it's ready or busy.
Each of these functions plays a critical role in the operation and interfacing of the memory chip with other components in a system.

Manufacturer

The MT28EW128ABA1LJS-0SIT is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the design and production of memory and storage solutions. The company produces a variety of products, including DRAM, NAND, and NOR flash memory, which are used in a wide range of applications, from consumer electronics to industrial systems. Micron is known for its innovation in memory technology and its contributions to advancements in data storage and processing capabilities.

Application

The MT28EW128ABA1LJS-0SIT is a NOR flash memory chip commonly used in applications that require non-volatile, fast read access memory. Key application areas include:
1. Embedded Systems: For storing firmware and boot code.
2. Consumer Electronics: In devices like digital cameras and set-top boxes.
3. Automotive: Used in infotainment systems and ECUs for reliable data storage.
4. Industrial Equipment: For programmable logic controllers (PLCs) and other control devices requiring durability.
5. Networking: In routers and switches for firmware storage.
Its robust data retention and endurance make it suitable for applications demanding high reliability and performance.

Package

The MT28EW128ABA1LJS-0SIT is a NOR Flash memory device, and it typically comes in a TSOP (Thin Small Outline Package) type. This package is designed for surface mounting on circuit boards and is known for its slim profile and space-saving advantages in electronic applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT28EW128ABA1LJS-0SIT?
A: It offers 128Mbit density, organized as 16M x 8 or 8M x 16 via a parallel interface for flexible system design.


Q: What is the typical access time for this NOR Flash memory?
A: The access time is 95 ns, ensuring fast read operations for code-execution applications.


Q: What is the operating voltage range for this device?
A: It operates from 2.7V to 3.6V, suitable for low-power embedded systems requiring a standard 3V supply.


Q: What is the write cycle time for word and page programming?
A: The write cycle time is 60 ns, allowing efficient programming of data words or pages in non-volatile storage.


Q: What is the temperature range for this component?
A: It supports an industrial temperature range of -40°C to 85°C, enabling reliable operation in harsh environments.


Q: Is this memory a volatile or non-volatile type?
A: It is non-volatile FLASH memory, retaining data without power, ideal for firmware and configuration storage.


Q: What package does the MT28EW128ABA1LJS-0SIT use?
A: It comes in a 56-TFSOP package (0.724", 18.40mm Width), with a 56-TSOP supplier device package for surface mount assembly.


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