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MT29F1G08ABBDAH4:D
+Lista de MateriaisIC FLASH 1GBIT PARALLEL 63VFBGA
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT29F1G08ABBDAH4:D
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Em Estoque3891
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Base Product Number | MT29F1G08 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Bulk |
Visão Geral
Description
Key features include high endurance, typically supporting up to 100,000 program/erase cycles, making it suitable for industrial and automotive applications where durability is critical. It also has a fast programming time and low power consumption, beneficial for battery-powered devices. The device supports error correction code (ECC) to ensure data integrity and reliability.
The MT29F1G08ABBDAH4:D is commonly used in applications such as embedded systems, consumer electronics, and solid-state drives (SSDs). Its compact form factor and robust performance make it a versatile choice for designers needing dependable non-volatile storage solutions.
Equivalent
1. Samsung: K9F1G08U0F - 1Gb NAND Flash
2. Toshiba: TC58NVG0S3HTA00 - 1Gb NAND Flash
3. Hynix: H27U1G8F2B - 1Gb NAND Flash
These chips are similar in terms of storage capacity and interface but may differ slightly in specifications such as speed, voltage, and temperature ratings.
Features
1. Capacity: 1 Gigabit, organized as 128 Megabytes.
2. Technology: Single-Level Cell (SLC) NAND, providing higher endurance and reliability compared to Multi-Level Cell (MLC) NAND.
3. Package Type: Typically available in a TSOP (Thin Small-Outline Package) or other compact forms suitable for space-constrained applications.
4. Voltage Range: Operates at a supply voltage around 3.3V, making it suitable for low-power applications.
5. Interface: Uses an asynchronous interface for data transfer.
6. Endurance & Data Retention: High endurance with a typical program/erase cycle capability and robust data retention characteristics.
7. Block Size: Includes a block size of 128 KB, with 64 pages per block.
8. Page Size: Each page is 2 KB, allowing for efficient read/write operations.
9. Applications: Ideal for use in embedded systems, consumer electronics, industrial applications, and anywhere reliable, non-volatile storage is needed.
These features make it suitable for applications requiring reliable and durable storage solutions.
Pinout
Key functions and pin details include:
1. Data Input/Output (I/O) Pins: Used for data read and write operations.
2. Chip Enable (CE#): Activates the chip for operation.
3. Write Enable (WE#): Controls the writing of data to the memory.
4. Read Enable (RE#): Facilitates data reading from the chip.
5. Address Latch Enable (ALE) and Command Latch Enable (CLE): Used to latch addresses and commands, respectively.
6. Ready/Busy (R/B#): Indicates the status of the chip—ready or busy.
7. VCC and VSS: Power supply and ground connections.
This NAND Flash memory is commonly used in applications that require reliable data storage, such as digital cameras, smartphones, and other portable electronics.
Manufacturer
Application
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Serves as storage in embedded systems like industrial machines and IoT devices.
3. Networking Equipment: Utilized in routers and switches for firmware storage.
4. Automotive Systems: Provides storage solutions in infotainment systems and advanced driver-assistance systems (ADAS).
5. Data Storage Devices: Forms the basis for solid-state drives (SSDs) and USB flash drives.
Its NAND Flash technology offers reliable and high-density storage, making it versatile for applications requiring efficient data management and retrieval.
Package
Frequently Asked Questions
Q: What is the memory size and organization of the MT29F1G08ABBDAH4:D?
A: It is a 1Gbit NAND Flash memory organized as 128M x 8 bits, ideal for high-density data storage.
Q: What voltage supply does this component require?
A: It operates within a 1.7V to 1.95V supply range, making it suitable for low-power embedded applications.
Q: Is this product still in active production?
A: No, the part status is marked as Obsolete, so it is recommended for legacy designs or while stock lasts.
Q: What package type is used for the MT29F1G08ABBDAH4:D?
A: It comes in a 63-VFBGA surface-mount package with a 9x11mm body size for compact PCB layouts.
Q: What is the operating temperature range of this Flash memory?
A: It is rated for commercial operation from 0°C to 70°C (TA), suitable for most standard electronic devices.
Q: Does this NAND Flash use a serial or parallel interface?
A: It uses a parallel memory interface, providing faster data transfer for traditional NAND controllers.