MT29F1G16ABBEAH4:E

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MT29F1G16ABBEAH4:E

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IC FLASH 1GBIT PARALLEL 63VFBGA

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT29F1G16ABBEAH4:E

  • Em Estoque7084

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Especificações

Atributo Valor
Part Status Obsolete
Base Product Number MT29F1G16
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Visão Geral

Description

MT29F1G16ABBEAH4:E is a Micron NAND Flash memory device (MT29F family), intended as parallel non-volatile storage for embedded and consumer electronics. It represents a 1 Gbit-class NAND with a wide data path (x16), used with a NAND controller that handles ECC, wear leveling, and bad-block management. Typical use involves read/verify, program, and erase operations, organized into pages and blocks, and it acts as a drop-in storage medium when paired with the proper firmware and flash translation layer. The “E” suffix and “AH4” code denote production/temperature variant and packaging/revision. For exact specifications—voltage, timing, page and block sizes, endurance, and recommended operating conditions—consult the official Micron MT29F1G16ABBEAH4:E datasheet and product documentation.

Pinout

- Pin count: 52 pins (TSOP II package).
- Function: Micron MT29F1G16ABBEAH4:E is a 1 Gbit parallel NAND flash memory with a 16-bit data bus (DQ0–DQ15), ONFI-compliant, used for non-volatile storage (read/write/erase operations).

Manufacturer

- Manufacturer: Micron Technology, Inc. (Micron)
- What kind of company: An American multinational technology company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash) and sells them to OEMs and consumers; one of the world’s largest memory chip makers.

Application

MT29F1G16ABBEAH4:E is a Micron 1 Gb NAND flash in an extended-temperature grade. Applications include:
- Embedded storage and boot firmware for mobile/embedded devices (smartphones, tablets, wearables)
- Consumer electronics (digital cameras, camcorders, set-top boxes)
- Industrial and automotive electronics (controllers, gateways, infotainment) needing rugged temp performance
- Small-form-factor SSD/cache memory
- Firmware storage for microcontrollers and SoCs
It’s suitable where non-volatile, low-power storage with a wide operating temperature range is required.

Package

FBGA (Fine-pitch Ball Grid Array) package.

Frequently Asked Questions


Q: What is the memory density and organization of the MT29F1G16ABBEAH4:E?
A: It has a 1Gbit density organized as 64M x 16, ideal for parallel-interface NAND Flash applications.


Q: What voltage supply range does this NAND Flash memory require?
A: It operates with a supply voltage of 1.7V to 1.95V, suitable for low-power embedded designs.


Q: What is the memory interface type for this component?
A: It uses a parallel interface, enabling high-speed data transfer in NAND Flash configurations.


Q: Is the MT29F1G16ABBEAH4:E suitable for surface-mount assembly?
A: Yes, it comes in a 63-VFBGA package with surface-mount mounting, ideal for compact PCB layouts.


Q: What is the operating temperature range for this flash memory IC?
A: The rated operating temperature range is 0°C to 70°C (TA), suitable for commercial applications.


Q: Is this component currently available for new designs?
A: No, the part status is marked as Obsolete, so it is not recommended for new product designs.


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