MT29F2G08ABAEAWP-AITX:E

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MT29F2G08ABAEAWP-AITX:E

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IC FLASH 2GBIT PARALLEL 48TSOP I

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT29F2G08ABAEAWP-AITX:E

  • Em Estoque7474

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Especificações

Atributo Valor
Part Status Last Time Buy
Base Product Number MT29F2G08
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Visão Geral

Description

The MT29F2G08ABAEAWP-AITX:E is a NAND Flash memory chip designed by Micron Technology. It is part of the MT29 family and offers 2Gb (gigabits) of storage capacity. This device utilizes a single-level cell (SLC) architecture, which is known for its high performance and reliability compared to multi-level cell (MLC) counterparts. The chip is organized in 64 pages per block and has a standard 8-bit interface.
Key features include a low voltage range, typically operating between 2.7V to 3.6V, and a high-speed interface, making it suitable for applications requiring rapid data access, such as digital cameras, smartphones, and embedded systems. The AITX:E suffix indicates specific package and operating temperature options, ensuring compatibility with industrial-grade environments.
It supports features like wear leveling, bad block management, and error correction code (ECC) for enhanced data integrity and longevity. The MT29F2G08ABAEAWP-AITX:E is a versatile and robust solution for applications that demand efficient and reliable non-volatile storage.

Equivalent

The MT29F2G08ABAEAWP-AITX:E chip is a 2Gb NAND Flash memory from Micron. Equivalent products would typically come from other major flash memory manufacturers like Samsung, Toshiba (now Kioxia), SK Hynix, or Western Digital. Key equivalent models might include Samsung's K9F2G08U0C, Kioxia's TC58NVG2S0H, and SK Hynix’s H27U2G8F2B. Ensure to verify specifications like voltage, interface, and package type for compatibility when considering alternatives.

Features

The MT29F2G08ABAEAWP-AITX:E is a NAND Flash memory chip manufactured by Micron Technology. It features a storage capacity of 2Gb (gigabits) and is organized in a x8 structure, which denotes an 8-bit input/output interface. This memory chip uses a Single-Level Cell (SLC) architecture, known for its reliability and high endurance, making it suitable for industrial applications.
Key features include:
- A voltage range of 2.7V to 3.6V, ensuring compatibility with a wide range of devices.
- High-speed read and write capabilities, making it efficient for various data storage needs.
- Support for error correction, which enhances data integrity.
- A robust endurance cycle, allowing for a large number of read/write operations over its lifetime.
The chip comes in a TSOP-48 package, which is a Thin Small Outline Package, enabling compact and efficient circuit design. It is designed to operate in temperatures ranging from -40°C to 85°C, making it ideal for use in harsh environmental conditions.

Pinout

The MT29F2G08ABAEAWP-AITX:E is a NAND flash memory chip from Micron Technology. It typically comes in a 48-pin TSOP (Thin Small Outline Package). This flash memory chip is often used for data storage in various electronic devices due to its non-volatile nature, meaning it retains data without power.
The primary function of the MT29F2G08ABAEAWP-AITX:E is to store data efficiently. It provides a storage capacity of 2Gb (gigabits). The chip operates with an 8-bit interface and is organized as 128 pages per block and 64 blocks per plane. Its main features include fast read and write operations, endurance for numerous program/erase cycles, and data retention capabilities.
Key signals and pins on the device include the data input/output pins (I/O0 to I/O7), command latch enable (CLE), address latch enable (ALE), chip enable (CE#), write enable (WE#), read enable (RE#), and ready/busy (R/B#) among others. These signals are crucial for controlling read, write, and erase operations on the NAND flash memory.

Manufacturer

The MT29F2G08ABAEAWP-AITX:E is manufactured by Micron Technology, Inc. Micron is a leading global company that specializes in the production of semiconductor devices, primarily memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops and manufactures dynamic random-access memory (DRAM), NAND flash memory, and NOR flash memory, which are integral components in computers, mobile devices, servers, and various consumer electronics. The company plays a significant role in the semiconductor industry, providing essential technology for data storage and management in a wide range of applications.

Application

The MT29F2G08ABAEAWP-AITX:E is a NAND flash memory chip commonly used in various application areas. These include consumer electronics like smartphones, tablets, and digital cameras for data storage. It's also used in solid-state drives (SSDs) for both personal computers and enterprise storage solutions, providing efficient and reliable data storage. Additionally, the chip is utilized in industrial applications, such as embedded systems and automotive electronics, due to its durability and ability to operate under different environmental conditions. Its high-density storage capability makes it suitable for applications requiring large data storage capacities.

Package

The MT29F2G08ABAEAWP-AITX:E is a NAND Flash memory chip produced by Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) type, which is a rectangular, flat package ideal for surface mounting on circuit boards, providing a compact and efficient solution for embedded systems and storage applications.

Frequently Asked Questions


Q: What is the memory size and organization of the MT29F2G08ABAEAWP-AITX:E?
A: It is a 2Gbit NAND Flash device organized as 256M x 8 bits, suitable for code and data storage in embedded systems.


Q: What voltage supply range does this NAND Flash require?
A: It operates within a 2.7V to 3.6V supply voltage range, compatible with standard 3.3V logic systems.


Q: Can this device withstand industrial temperature environments?
A: Yes, it supports an operating temperature range of -40°C to 85°C, making it suitable for industrial and automotive applications.


Q: What is the memory interface type for this component?
A: It uses a Parallel (x8) memory interface, requiring standard control signals like CE#, WE#, RE#, and ALE/CLE.


Q: What is the package type and mounting style?
A: It comes in a 48-TFSOP (18.40mm width) package, surface mounted, specifically in a 48-TSOP I form factor.


Q: Is this part currently available for new designs?
A: Its Part Status is "Last Time Buy," indicating it is nearing end-of-life; plan for last-time purchases or select an alternative for new designs.


Q: How is the device delivered from the manufacturer?
A: It is supplied in a Tray packaging, suitable for automated assembly lines in high-volume production.


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