MT29F2G08ABBEAH4-IT:E

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MT29F2G08ABBEAH4-IT:E

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IC FLASH 2GBIT PARALLEL 63VFBGA

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT29F2G08ABBEAH4-IT:E

  • Em Estoque3344

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Especificações

Atributo Valor
Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

Visão Geral

Description

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory chip produced by Micron Technology. It belongs to the MT29F series, which is known for its high-density storage capabilities. This particular model features a 2Gb (gigabit) capacity, organized in an 8-bit architecture, and is designed to interface with a wide range of electronic devices.
Key features of the MT29F2G08ABBEAH4-IT:E include its small form factor, low power consumption, and robust performance in a variety of environmental conditions. It operates effectively within the industrial temperature range, making it suitable for applications in harsh environments, such as automotive, industrial, and networking sectors.
This NAND Flash device supports high-speed data transfer rates and is designed for efficient storage management, offering features such as wear leveling and error correction to ensure data integrity and reliability. Its compact design and high capacity make it ideal for use in embedded systems, solid-state drives (SSDs), and other applications requiring reliable non-volatile memory solutions.

Equivalent

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory chip by Micron. Equivalent products include similar NAND Flash chips from manufacturers like Samsung, Toshiba (Kioxia), and SK Hynix. For example, you could look for 2Gb NAND Flash chips with similar specifications, such as the Toshiba TC58NVG2S0HTA00 or Samsung K9F2G08U0F. Always ensure the replacements are compatible in terms of voltage, package type, and performance characteristics.

Features

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory chip from Micron Technology. Key features include:
1. Capacity: 2Gb (Gigabits) of storage, organized in a x8 configuration.
2. Architecture: Utilizes a multi-level cell (MLC) NAND architecture, allowing for more data storage in the same physical space compared to single-level cell (SLC) technologies.
3. Package: Typically housed in a 48-pin TSOP (Thin Small Outline Package) for easy integration into a variety of electronic devices.
4. Performance: Offers fast read and write times suitable for applications requiring efficient data handling.
5. Temperature Range: Industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of environmental conditions.
6. Endurance and Reliability: Designed for a high number of program/erase cycles, enhancing longevity and reliability in data storage applications.
7. Interfaces: Supports standard NAND interface, making it compatible with numerous controllers and systems.
These features make it suitable for embedded systems, industrial applications, and consumer electronics where robust and reliable data storage is required.

Pinout

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory device manufactured by Micron Technology. It typically comes in a 48-pin TSOP (Thin Small Outline Package). The pins serve various functions including:
1. Data Inputs/Outputs (DQ0-DQ7): These are used for data input and output operations.
2. Address Inputs (A0-A4): Used for addressing memory locations.
3. Chip Enable (CE#): Activates the chip.
4. Read Enable (RE#): Controls data output.
5. Write Enable (WE#): Controls data input.
6. Command Latch Enable (CLE): Latches command data.
7. Address Latch Enable (ALE): Latches address data.
8. Ready/Busy (R/B#): Indicates the device's status.
9. Write Protect (WP#): Protects the device from inadvertent programming or erasing.
10. Vcc: Power supply pin.
11. Vss: Ground pin.
These functions are crucial for the operation of the NAND Flash memory, providing the necessary interface for reading, writing, and controlling the memory. For specific electrical characteristics and timing, refer to the detailed datasheet provided by the manufacturer.

Manufacturer

The MT29F2G08ABBEAH4-IT:E is manufactured by Micron Technology, Inc. Micron is an American multinational company specializing in the production of semiconductor devices, primarily focusing on memory and storage solutions. This includes dynamic random-access memory (DRAM), NAND flash memory, and NOR flash memory. The company is a leader in the global semiconductor industry and serves various sectors such as consumer electronics, computing, data centers, networking, mobile, and automotive markets. Micron's innovations support a range of technologies, including artificial intelligence, autonomous vehicles, and mobile computing, providing essential components that enable these applications.

Application

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory chip used in various applications due to its non-volatile storage capabilities. Common application areas include embedded systems, consumer electronics, industrial devices, and automotive systems. It is often utilized for data storage in smartphones, tablets, digital cameras, and other portable devices. Additionally, this chip can be found in networking equipment, medical devices, and IoT systems where reliable data retention and high-density storage are essential. Its industrial temperature range makes it suitable for use in environments requiring robust performance.

Package

The MT29F2G08ABBEAH4-IT:E is a NAND Flash memory chip from Micron Technology. It is typically available in a TSOP (Thin Small Outline Package) type, which is a common package for memory devices, allowing for surface-mounting on circuit boards. This package is designed for efficient space usage and is suitable for various electronic applications.

Frequently Asked Questions


Q: What is the memory density and organization of this NAND Flash?
A: It is a 2Gbit NAND Flash organized as 256M x 8 bits, suitable for high-density data storage.


Q: What voltage range does this MT29F2G08ABBEAH4-IT:E support?
A: It operates on a low voltage supply of 1.7V to 1.95V, ideal for power-sensitive designs.


Q: Can this device operate in extreme temperature environments?
A: Yes, it has an industrial temperature range of -40°C to +85°C, ensuring reliability in harsh conditions.


Q: What is the memory interface type for this component?
A: It uses a parallel memory interface, enabling fast read/write operations in embedded systems.


Q: Is this component available for new designs given its Last Time Buy status?
A: No, it is in "Last Time Buy" status; final purchases are recommended for sustaining existing production.


Q: What package does this NAND Flash come in?
A: It is supplied in a 63-VFBGA (9x11mm) surface-mount package, occupying minimal PCB space.


Q: Does this memory require an external voltage regulator for its core?
A: No, the core operates directly from the provided 1.7V to 1.95V supply without external regulation.


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