MT29F2G16ABBEAH4-AAT:E

MT29F2G16ABBEAH4-AAT:E is Micron’s 2‑Gbit parallel NAND flash device with a 16‑bit data bus (x16). It uses MLC NAND and is organized into blocks and pages with built‑in bad‑block management and ECC support. The device uses an ONFI‑compatible parallel interface and is intended for embedded storage, boot media, and other mass‑storage applications where a block‑erasable flash is suitable. Typical characteristics include multiple planes for performance and a page size with a spare area, along with endurance suitable for NAND devices and an industrial temperature range variant. The -AAT:E suffix denotes a specific speed grade, packaging, and operating conditions. For precise specifications (exact page/Block sizes, number of blocks, read/write latencies, voltages, endurance, and temperature range), consult the MT29F2G16ABBEAH4 data sheet and product brief from Micron.

Here are the key features of MT29F2G16ABBEAH4-AAT:E (Micron NAND):
- Density and bus: 2 Gbit MLC NAND with a 16-bit wide data bus (x16)
- Interface: ONFI-compliant NAND flash interface
- Organization: 2 KB user data per page with a spare area
- Block/page layout: typical page and block structure (multiplane capable)
- Operation: supports standard read/write, with multi-page/ multi-plane operations
- Reliability: Bad-block management; ECC ready (host controller BCH/LDPC), wear leveling handled by the controller
- Temperatures: automotive/extended temperature variant (AAT/E suffix) for wider operating range
- Power: optimized low-power modes and standby states
- Endurance and retention: specified for long-term data retention and multiple P/E cycles (typical values defined in datasheet; exact numbers depend on grade)
Note: Exact page/block sizes, voltage ranges, and endurance figures are defined in the datasheet; the AAT/E variant indicates an automotive-grade extended-temperature option.

- Pin count: 48 pins
- Function: Micron MT29F2G16ABBEAH4-AAT:E is a 2‑gigabit NAND flash memory device (NAND-type non-volatile storage) with a standard NAND interface (ALE/CLE, WE#, RE#, CE#, WP#, R/B#, DQ0–DQ7) for read/write storage.

Manufacturer: Micron Technology, Inc. (Micron)
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies, including DRAM and NAND/NOR flash memory.

- Embedded/non-volatile storage in consumer electronics (digital cameras, camcorders, MP3/MP4 players, GPS devices, set-top boxes)
- Boot firmware and data storage in mobile/portable devices and other embedded systems
- Industrial, automotive, and medical electronics for firmware storage and data logging
- Development boards and prototyping for memory expansion in microcontroller/FPGA projects
Note: Suitable where a small-capacity, reliable NAND flash is required as part of a larger storage solution.

Package type: 48‑ball FBGA (FBGA‑48) package.