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MT29F4G08ABAEAWP-IT:E
+Lista de MateriaisIC FLASH 4GBIT PARALLEL 48TSOP I
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT29F4G08ABAEAWP-IT:E
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Base Product Number | MT29F4G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
Visão Geral
Description
The chip is suited for industrial applications, evident from its extended temperature range of -40°C to +85°C, ensuring reliable performance in harsh environments. It is typically used in applications requiring high-speed data access and storage, such as embedded systems, automotive electronics, and industrial equipment. The MT29F4G08ABAEAWP-IT:E offers a balance of performance, endurance, and cost-effectiveness, making it a popular choice for various industrial and commercial applications needing robust flash storage solutions.
Equivalent
- Samsung K9F4G08U0D
- Toshiba TH58NVG4D4CTG20
- Hynix HY27UH08AG5M
- Intel JS29F64G08AAMDB
These equivalents offer similar storage capacities, interfaces, and performance specifications, making them suitable replacements for similar applications. Always ensure compatibility by checking detailed specifications and application requirements.
Features
Key features include:
- Capacity: 4Gb
- Page Size: 4096 bytes + 224 bytes spare
- Voltage: 3.3V
- Temperature Range: Industrial temperature range (-40°C to +85°C)
- Interface: Asynchronous and synchronous
- Endurance: Typically supports 10,000 program/erase cycles
- Error Correction: Supports error-correcting code (ECC) to ensure data integrity
- Package: Available in a 48-pin TSOP type 1 or a 63-ball BGA package
This NAND Flash device is commonly used in applications such as solid-state drives (SSDs), digital cameras, and other embedded systems that require reliable, non-volatile memory storage solutions.
Pinout
Here are the key details:
- Pin Count: The device generally features 48 pins.
- Function: The MT29F4G08ABAEAWP-IT:E is used for high-density data storage applications, offering a non-volatile memory solution ideal for a wide range of electronic devices. It supports advanced features like wear leveling, bad block management, and error correction. This NAND Flash device is used in applications such as solid-state drives, USB flash drives, and memory cards.
Always refer to the official datasheet from Micron Technology for the most accurate and detailed information about the device's specifications and pin configuration.
Manufacturer
Micron Technology is recognized for its innovation and development in the field of memory technology, contributing significantly to advancements in data storage and processing. The company serves a broad range of markets, including consumer electronics, mobile communications, automotive, industrial, and enterprise sectors. Micron has a strong presence worldwide, with manufacturing facilities, research and development centers, and sales offices distributed across multiple countries. As a key player in the semiconductor industry, Micron continues to invest in cutting-edge technologies and solutions to meet the growing demands for high-performance and reliable memory and storage products.
Application
1. Consumer Electronics: Utilized in smartphones, tablets, and multimedia devices for data storage.
2. Industrial Systems: Employed in embedded systems and industrial automation for reliable data retention in harsh environments.
3. Automotive: Used in infotainment systems, navigation, and other onboard electronics needing durable storage.
4. Networking Equipment: Supports routers and switches with essential firmware storage.
5. Data Storage Devices: Integral part of SSDs and memory cards, providing expandable storage solutions.
6. IoT Devices: Facilitates data storage in connected devices requiring lightweight and compact memory components.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT29F4G08ABAEAWP-IT:E?
A: This device has a 4Gbit density organized as 512M x 8 bits, suitable for high-density data storage in embedded systems.
Q: Is this NAND Flash component suitable for industrial temperature ranges?
A: Yes, it operates from -40°C to 85°C (TA), making it ideal for industrial and automotive applications requiring wide temperature tolerance.
Q: What voltage supply does this memory IC require?
A: It requires a single supply voltage ranging from 2.7V to 3.6V, ensuring compatibility with standard 3.3V logic systems.
Q: What is the memory interface type for this part?
A: It uses a parallel memory interface, enabling fast read/write operations for high-throughput NAND Flash applications.
Q: Is the MT29F4G08ABAEAWP-IT:E still in production or obsolete?
A: Its Part Status is marked as Obsolete, so it is recommended for legacy designs or last-time buy; verify availability with distributors.
Q: What package does this product come in, and is it surface mount?
A: It comes in a 48-TFSOP (18.40mm width) surface-mount package, with supplier device package 48-TSOP I, commonly used for NAND Flash modules.
Q: What type of NAND technology does this memory use?
A: It utilizes FLASH - NAND non-volatile memory technology, offering high-density storage with block-oriented access for data logging and firmware.
