MT29F64G08CBABAWP:B

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MT29F64G08CBABAWP:B

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IC FLSH 64GBIT PARALLEL 48TSOP I

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT29F64G08CBABAWP:B

  • Pacote TFSOP-48

  • Em Estoque6463

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Especificações

Atributo Valor
Package / Case Bulk
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 64Gb (8G x 8)
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

The MT29F64G08CBABAWP:B is a NAND flash memory chip developed by Micron Technology. It is part of the MT29 series, known for its high-density storage and reliability, making it suitable for a variety of applications including consumer electronics, mobile devices, and enterprise storage solutions. This particular model offers 64 gigabits of storage capacity, organized in an 8-bit interface.
Key features include:
1. High Density and Scalability: Offers a large storage capacity, suitable for applications requiring significant data storage.
2. Performance: Designed for fast read and write operations, enhancing overall system performance.
3. Reliability: Incorporates advanced error correction mechanisms to ensure data integrity and longevity of the chip.
4. Power Efficiency: Optimized for lower power consumption, making it ideal for battery-operated devices.
5. Compatibility: Supports a range of standard interfaces, allowing for integration into various systems.
Overall, the MT29F64G08CBABAWP:B is a versatile NAND flash memory chip, balancing high performance, efficiency, and reliability for modern storage demands.

Equivalent

The MT29F64G08CBABAWP:B is a 64Gb NAND flash memory chip produced by Micron. Equivalent products would include similar NAND flash memory chips from other manufacturers, such as:
1. Samsung K9GAG08U0E - a 64Gb MLC NAND from Samsung.
2. Toshiba TH58NVG7S2HTA20 - a 64Gb NAND flash.
3. SK Hynix H27UAG8T2A - a 64Gb MLC NAND.
These chips would have comparable storage capacities and performance characteristics for similar applications.

Features

The MT29F64G08CBABAWP:B is a NAND Flash memory chip produced by Micron Technology. It features a storage capacity of 64 gigabits (Gb) and utilizes SLC (Single-Level Cell) technology, which stores one bit per cell, providing superior performance and endurance compared to MLC (Multi-Level Cell) or TLC (Triple-Level Cell) NAND types. The chip operates on a 3.3V power supply and uses an 8-bit I/O interface, making it suitable for applications requiring fast data transfer and reliable performance.
Key features include a high-performance read and write capability, endurance suited for applications with frequent write and erase cycles, and a robust design for data integrity and longevity. The chip is commonly used in embedded systems, industrial applications, and other devices where reliability is critical. Additionally, it supports features like ECC (Error Correction Code) to enhance data integrity and reliability. The package type for this model is typically a TSOP (Thin Small Outline Package) or similar, designed for easy integration into various hardware designs.

Pinout

The MT29F64G08CBABAWP:B is a NAND Flash memory chip manufactured by Micron Technology. It typically comes in a 48-pin TSOP package. These pins are used for various functions required for the operation of the NAND Flash memory, including:
- Power Supply Pins: Provide necessary voltage to the chip.
- Control Pins: Include Chip Enable (CE#), Write Enable (WE#), Read Enable (RE#), and Command Latch Enable (CLE), which control the reading and writing operations.
- Data Input/Output Pins (I/O): Usually a set of 8 pins (I/O0–I/O7) used for data transfer.
- Address Latch Enable (ALE): Used to latch addresses in the command interface.
- Ready/Busy (R/B#): Indicates the status of the chip, whether it is busy or ready for the next command.
- Write Protect (WP#): Used to protect the memory from being written to.
- Ground and VCC Pins: Provide ground and power connections.
This configuration allows the chip to efficiently handle read, write, and erase operations typical in NAND Flash memory usage.

Manufacturer

The MT29F64G08CBABAWP:B is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is an American multinational corporation based in Boise, Idaho. The company specializes in the production of semiconductor devices, primarily memory and storage technologies. Its product portfolio includes DRAM, NAND flash, and NOR flash memory, which are essential components in computers, smartphones, data centers, and other electronic devices.
Micron is known for its innovation and advancements in memory technology, making it one of the leading companies in the semiconductor industry. The company serves a diverse range of markets, including consumer electronics, telecommunications, automotive, and industrial applications. Micron's focus is on providing high-performance, reliable, and efficient memory solutions that enable the advancement of technology across these sectors.

Application

The MT29F64G08CBABAWP:B is a NAND flash memory chip commonly used in various applications requiring reliable and high-density data storage. Its primary application areas include:
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for storing operating systems and user data.
2. Solid-State Drives (SSDs): Integrated into SSDs for faster data access and improved storage capacity.
3. Embedded Systems: Implemented in industrial and automotive systems for critical data retention and booting processes.
4. Networking Equipment: Utilized in routers and switches to store firmware and configuration data.
5. Medical Devices: Employed for secure data logging and retrieval.
These applications leverage its high capacity, reliability, and durability.

Package

The MT29F64G08CBABAWP:B is a NAND flash memory chip produced by Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) type, which is designed for surface mounting on printed circuit boards. This packaging allows for a compact design suitable for embedded systems and other applications requiring high-density storage solutions.

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