MT40A1G4RH-083E:B

Imagens apenas para referência

MT40A1G4RH-083E:B

+Lista de Materiais

IC DRAM 4GBIT PARALLEL 78FBGA

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT40A1G4RH-083E:B

  • Pacote TFBGA-78

  • Em Estoque7054

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Supplier Micron Technology Inc.
Package / Case Tray
Part Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gb (1G x 4)
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount

Visão Geral

Description

MT40A1G4RH-083E:B is a Micron DDR3 SDRAM memory device. It provides 1 Gbit of memory in an x4 data-width per device (1 Gb total per chip). The “-083E” speed grade indicates DDR3 performance up to about 1066 MT/s, with a nominal 1.5 V supply. Features typically include multi-bank (eight banks), 8n prefetch, and a synchronous interface. The “-B” suffix usually denotes a RoHS-compliant/packaging variant. In systems, multiple such devices are mounted to form wider buses (e.g., 64-bit modules). This chip is used as part of memory subsystems on PCBs or DIMMs; for exact timings, voltage, package options, and electrical specs, consult the Micron MT40A1G4RH-083E:B datasheet.

Equivalent

MT40A1G4RH-083E:B is a Micron DDR3L SDRAM with 1Gbit x 4 organization (4Gbit total), typically DDR3L-1066/1333 at 1.35V, unbuffered. Equivalents are other vendors’ DDR3L SDRAMs with the same 1G×4 organization and same speed/voltage. To get exact cross-references, use Micron’s cross-reference tool or DigiKey/Mouser by searching for 1G×4, DDR3L, and the speed (1066/1333 MT/s). Provide speed/voltage for precise substitutes.

Features

Here are typical features for Micron MT40A1G4RH-083E:B (DDR3 SDRAM device):
- 1 Gbit density per device, x4 data width (1Gx4)
- DDR3 SDRAM, fully synchronous with 8-bank organization
- 8n prefetch, burst lengths BL4/BL8
- Operating voltage: 1.5 V (DDR3) with DDR3L variants available (1.35 V)
- Data rates up to ~1333 MT/s (speed grade dependent)
- Auto-refresh, partial array self-refresh, deep power-down support
- Packaging: FBGA (ball grid array) package
- Temperature options include industrial grade (-40°C to 85°C)
- RoHS compliant; ZQ calibration/other standard DDR3 features
Note: exact speed, voltage and temperature options depend on the specific lot/variant; consult the datasheet for precise specs.

Pinout

- Pin count: 60-ball BGA pins
- Function: Mobile DDR3L SDRAM, 1 Gbit capacity organized as x4 data width (memory device).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: A global American semiconductor company that designs, manufactures, and sells memory and storage solutions (DRAM, NAND, etc.). HQ in Boise, Idaho; one of the world's largest memory manufacturers.

Application

MT40A1G4RH-083E:B is a mobile/low-power DRAM. Applications include main memory in mobile and embedded systems. Typical uses: smartphones and tablets, portable media players, digital cameras and camcorders, set-top boxes, embedded control units, and thin/ultrabook notebooks. Suitable for other space-constrained devices requiring high-density memory and low power.

Package

A 96‑ball Fine-Pitched FBGA (FBGA-96) package.

Produtos relacionados a MT40A1G4RH-083E:B

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para MT40A1G4RH-083E:B Use este formulário. Responderemos em até 12 horas.