MT40A1G8WE-075E:B

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MT40A1G8WE-075E:B

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IC DRAM 8GBIT PARALLEL 78FBGA

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT40A1G8WE-075E:B

  • Pacote FBGA-78

  • Em Estoque5283

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Especificações

Atributo Valor
Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 8Gb (1G x 8)
MemoryInterface Parallel
ClockFrequency 1.33 GHz
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Visão Geral

Description

MT40A1G8WE-075E:B is a Micron DRAM device from the MT40A1G8WE family. It’s a synchronous dynamic RAM (DRAM) die used as a memory component in systems and modules. The “1G8” portion typically indicates the device organization (a high-density, x8 I/O part), while the suffixes “-075E” and “:B” designate a specific speed/timing grade and packaging/temperature variant, respectively. In short, it’s a Micron DRAM chip intended for inclusion in larger memory assemblies, with exact voltage, data rate, timing parameters, and temperature range defined in the official datasheet for the -075E:B variant. For precise specifications (density per die, voltage, timing specs, and packaging), consult the Micron MT40A1G8WE-075E:B datasheet or product brief.

Features

MT40A1G8WE-075E:B is a Micron memory device. Typical features (high-level, per datasheet variants may vary):
- Density/width: 1 Gbit total per device, x8 data width (1Gbit x 8)
- Architecture: Synchronous SDRAM with JEDEC DDR3L-compatible interface
- Banks: 8 banks
- Data rate: up to DDR3L speeds (commonly up to ~800–1600 MT/s depending on grade)
- Voltage: DDR3L (low-voltage) operation (approx. 1.35V; also 1.5V tolerant per spec)
- Features: auto-refresh, self-refresh, ZQ calibration, DLL, extended tRC/tRCD/tRP timing options
- Latencies: programmable via memory controller (varies by grade)
- Packages: small-footprint surface-mount (FBGA) with Pb-free/Halogen-free options
- Applications: memory devices in laptops, embedded systems, memory subsystems, modules
Note: Exact voltage, speed grade, timing parameters, and package details depend on the specific lot/grade. Please consult the official datasheet for precise specifications.

Pinout

- Pin count: 84-ball FBGA (84 pins)
- Function: Micron MT40A1G8WE-075E:B is a DDR3 SDRAM device (1 Gb total per die) with an 8-bit data width (x8). It provides the memory array and the standard DDR3 interface (DQ0–DQ7, DQS, address/command lines, bank selects, and power/ground pins) for system memory.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs) for computers, servers, mobile devices, and embedded systems.

Application

MT40A1G8WE-075E:B is a Micron DRAM device. Typical application areas include:
- Personal computers (desktops, laptops)
- Servers and data centers
- Embedded/industrial systems
- Networking/telecom equipment
- Consumer electronics (gaming consoles, set-top boxes, media players)
- Automotive (infotainment, instrument clusters)

Package

FBGA package. Specifically a 96-ball Fine-pitch FBGA (FBGA-96) package for the MT40A1G8WE-075E:B.

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