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MT40A2G8NEA-062E:J
+Lista de MateriaisIC DRAM 16GBIT PARALLEL 78FBGA
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT40A2G8NEA-062E:J
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Especificações
| Atributo | Valor |
| PartStatus | Obsolete |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 16Gbit |
| MemoryOrganization | 2G x 8 |
| MemoryInterface | Parallel |
| ClockFrequency | 1.6 GHz |
| WriteCycleTime-Word,Page | 15ns |
| AccessTime | 19 ns |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 78-TFBGA |
| SupplierDevicePackage | 78-FBGA (7.5x11) |
| BaseProductNumber | MT40A2G8 |
Visão Geral
Description
Key features include improved power efficiency, enhanced performance over previous DDR generations, and support for various memory configurations. The module is designed for reliability and durability, compliant with JEDEC standards. With its compact design and advanced technology, the MT40A2G8NEA-062E:J is ideal for users seeking efficient and high-performance memory solutions in modern computing environments.
Equivalent
1. Hynix H5TQ2G83AFR
2. Samsung K4B2G0846D-BCKO
3. Micron MT41K256M16HA-125
4. Elpida EDB2133BABBG
Ensure compatibility with your specific device requirements before substitution.
Features
This memory chip utilizes a 288-pin DIMM form factor and is designed for high-performance computing applications, including servers and workstations. Key features include improved power efficiency, enhanced bandwidth compared to previous DDR generations, and support for advanced memory management technologies, such as ECC (Error-Correcting Code) for data integrity.
Additionally, it comes with a robust thermal performance profile suitable for demanding environments. The “J” suffix indicates it is a part of Micron’s standard product offering. Overall, the MT40A2G8NEA-062E:J is designed for reliability, speed, and efficiency in memory-intensive applications.
Pinout
The pins serve various functions, including power supply, ground, data input/output, clock signals, and control signals. Specifically, it has pins dedicated to address lines, data lines (DQ), command inputs (CMD), clock inputs (CK), and various control signals such as Chip Select (CS) and Write Enable (WE). This chip operates at a voltage of 1.2V and supports data rates of up to 2400 MT/s, providing efficient performance for high-speed memory applications.