Imagens apenas para referência
MT41K256M16HA-125 IT:E
+Lista de MateriaisDRAM
-
FabricanteMicron
-
Peça do Fabricante #MT41K256M16HA-125 IT:E
-
Ficha Técnica MT41K256M16HA-125 IT:E DataSheet
-
Em Estoque4892
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
Visão Geral
Description
The chip operates with a clock speed of 1250MHz, providing fast data transfer rates, which is essential for applications requiring high-speed processing and data handling. This makes it suitable for use in desktops, laptops, and servers where energy efficiency and performance are critical. The "IT" in the part number indicates that it is designed to operate in an industrial temperature range, ensuring reliability under varied conditions. Overall, the MT41K256M16HA-125 IT:E is an essential component for enhancing the speed and efficiency of electronic devices.
Equivalent
1. Samsung: K4B4G1646E-BYK0
2. SK Hynix: H5TC4G63CFR-PBA
3. Nanya: NT5CB256M16ER-EK
4. Kingston: A preselected module with similar specifications, since Kingston typically sells memory modules rather than individual chips.
These chips generally share similar specifications, such as 256M x 16 configuration and operating at 1.35V.
Features
1. Density and Organization: It has a 4 Gb (Gigabit) density, organized as 256M x 16-bits.
2. Speed and Performance: Operates with a data rate of up to 1600 MT/s (megatransfers per second) and has a CAS latency of 11 cycles, providing efficient performance for a variety of applications.
3. Voltage: Operates at a standard voltage of 1.35V, which is part of the DDR3L (low voltage) standard, offering power efficiency while maintaining performance.
4. Package Type: Available in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, supporting high-density applications.
5. Temperature Range: The "IT" designation indicates it is suitable for industrial temperature ranges, typically from -40°C to 95°C, making it ideal for harsh environments.
6. Reliability: Features on-die termination (ODT) and auto-refresh capabilities to ensure data integrity and reliability.
This DRAM module is commonly used in applications requiring high-speed data processing and low power consumption, such as computing, communications, and industrial systems.
Pinout
Regarding pin count and functions:
- Pin Count: This DRAM chip typically comes in a 96-ball FBGA (Fine Ball Grid Array) package.
- Key Functions:
- Address Pins: These pins are used to address the memory cells within the chip.
- Data Pins (DQ): These are used for inputting and outputting data.
- Control Pins: These include signals like CS# (Chip Select), RAS# (Row Address Strobe), CAS# (Column Address Strobe), and WE# (Write Enable) for controlling the memory operations.
- Clock Pins: CK and CK# are the differential clock inputs which synchronize data transfers.
- Power and Ground: VDD, VDDQ for core and I/O power, and VSS, VSSQ for ground.
- Additional Pins: Such as CKE (Clock Enable), ODT (On-Die Termination), RESET#, and various others for configuration and operation control.
For the exact pin layout, consult the datasheet provided by Micron or similar authoritative resources.