MT41K512M16TNA-125:E

The MT41K512M16TNA-125:E is a DRAM memory module produced by Micron Technology, specifically designed for high-performance applications. It is a 4Gb DDR3 SDRAM component organized as 512 Meg x 16 bits, featuring a double data rate interface that allows for higher data rates compared to earlier DDR generations. The "125" in the model number indicates a maximum clock speed of 1,600 MT/s, while the "E" signifies that it meets the JEDEC standards for energy-efficient operation, making it suitable for mobile and embedded devices.
This memory is typically used in various applications, including laptops, tablets, and other portable devices, where low power consumption is essential. With a 1.5V operating voltage, it provides a good balance of performance and energy efficiency. The component is packaged in a 78-ball VFBGA (Very Fine Ball Grid Array) form factor, facilitating compact designs in modern electronic devices. Overall, the MT41K512M16TNA-125:E is ideal for applications requiring reliable and efficient memory solutions.

The MT41K512M16TNA-125:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646D
3. Micron MT41K512M16HA-125
4. Kingston KVR16S11/4
Always check specifications for compatibility in your specific application.

The MT41K512M16TNA-125:E is a 4Gb DDR3 SDRAM memory chip from Micron Technology. Key features include:
1. Capacity: 4 Gigabits (512MB x 16).
2. Data Rate: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Bus Width: 16-bit data bus.
4. Organization: Configured as x16, suitable for various applications.
5. Package Type: Offered in a 78-ball VFBGA (very fine ball grid array) package.
6. Voltage: Operates at a low voltage of 1.35V, enhancing power efficiency.
7. Temperature Range: Designed for commercial temperature range (0°C to 95°C).
8. Features: Supports burst length of 8 and includes on-die termination (ODT) for improved signal integrity.
9. Applications: Ideal for use in mobile devices, laptops, and other consumer electronics.
These characteristics make it suitable for a range of high-performance computing applications.

The MT41K512M16TNA-125:E is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 512 Meg x 16 bits and operates at a speed of 1250 MT/s (megatransfers per second).
Key functions include data storage for various applications, supporting memory operations for devices such as computers and servers. The chip features various functional pins, including data input/output (DQ), address (A), control (CK, CK#, CS#, RAS#, CAS#, WE#), and power supply pins (VDD, VSS). The device supports a 1.5V supply voltage and includes additional pins for bank selection, command inputs, and on-die termination (ODT).
Overall, this memory chip is designed for high-performance applications requiring efficient data processing and storage capabilities.

The manufacturer of the MT41K512M16TNA-125:E is Micron Technology, Inc. Micron is a leading American producer of computer memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Established in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a crucial role in the global semiconductor industry.
Micron's products are widely used in various applications, including personal computers, mobile devices, servers, and automotive systems. The company focuses on providing high-quality memory solutions to meet the growing demands of data-intensive applications and technologies such as artificial intelligence, cloud computing, and the Internet of Things (IoT). In addition to manufacturing, Micron invests significantly in research and development to advance memory technology and maintain competitive advantage in the rapidly evolving tech landscape.

The MT41K512M16TNA-125:E is a 4GB DDR3 SDRAM memory module, primarily used in various computing applications such as personal computers, laptops, and servers. It is designed for high-performance tasks including gaming, data processing, and multimedia applications. Additionally, it can be found in networking equipment, embedded systems, and industrial applications where reliable and efficient memory performance is essential. Its compatibility with DDR3 technology makes it suitable for upgrading existing systems that require enhanced memory capacity and speed.

The MT41K512M16TNA-125:E is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array). This package type is designed for high-density applications and allows for efficient heat dissipation and compact board layouts.