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MT46H64M16LFCK-6:A
+Lista de MateriaisDRAM
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FabricanteMicron
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Peça do Fabricante #MT46H64M16LFCK-6:A
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Especificações
| Atributo | Valor |
Visão Geral
Description
Key features of the MT46H64M16LFCK-6:A include a data transfer rate of up to 800 MT/s and a clock frequency of 166 MHz, making it suitable for applications that demand high data throughput. The device operates at a low voltage of 1.8V, which enhances power efficiency, especially important in battery-powered devices.
It also includes programmable read and write latencies, burst lengths, and an auto-refresh mode to maintain data integrity. The component is typically used in consumer electronics, telecommunications equipment, and other digital devices where high-speed data processing is critical.
Equivalent
1. Samsung K4X51163PC series
2. Hynix HY5DU121622CTP-D43
3. Nanya NT5DS32M16F6
These alternatives should match in terms of key specifications like memory size, speed, and voltage. Always verify compatibility with your specific requirements.
Features
1. Capacity: 1 Gigabit, organized as 64M x 16 bits.
2. Speed: Operates at a clock frequency of 166 MHz, with data rates of 333 MT/s (million transfers per second).
3. Low Power Consumption: Designed for mobile applications, it features low power modes like deep power-down, making it ideal for battery-powered devices.
4. Voltage: Operates at a low voltage of 1.8V for both core and I/O, enhancing energy efficiency.
5. Temperature Range: Supports industrial temperature range, making it suitable for a variety of environmental conditions.
6. Packaging: Available in a compact FBGA (Fine-Pitch Ball Grid Array) package, which is space-efficient for portable devices.
7. Reliability: Incorporates robust error correction and on-chip temperature sensor for improved data integrity and operational stability.
These features make it suitable for use in mobile devices, portable electronics, and other applications where power efficiency and space constraints are priorities.
Pinout
The primary function of the MT46H64M16LFCK-6:A is to serve as volatile memory that provides high-speed data access and low power consumption, making it suitable for mobile applications such as smartphones, tablets, and other portable devices. It offers a memory density of 1 Gb, configured as 64M x 16 bits.
Key features include low operating voltage and power-efficient modes, such as deep power-down and partial array self-refresh, which are crucial for extending battery life in mobile devices. With a data rate of 333 MHz for this -6 speed grade, it supports fast data transfer rates essential for the performance demands of contemporary mobile computing.