MT46V16M16P-5B:M

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MT46V16M16P-5B:M

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IC DRAM 256MBIT PARALLEL 66TSOP

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT46V16M16P-5B:M

  • Em Estoque4255

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Especificações

Atributo Valor
PartStatus Obsolete
BaseProductNumber MT46V16M16
DigiKeyProgrammable Not Verified
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR
MemorySize 256Mbit
MemoryOrganization 16M x 16
MemoryInterface Parallel
ClockFrequency 200 MHz
WriteCycleTime-Word,Page 15ns
Voltage-Supply 2.5V ~ 2.7V
OperatingTemperature 0°C ~ 70°C (TA)
MountingType Surface Mount
Package 66-TSSOP (0.400", 10.16mm Width)
SupplierDevicePackage 66-TSOP
Packaging Tray
AccessTime 700 ps

Visão Geral

Description

The MT46V16M16P-5B:M is a DRAM (Dynamic Random Access Memory) component, specifically a 256Mb DDR SDRAM (Double Data Rate Synchronous Dynamic RAM) chip. It is designed for high-speed data storage and retrieval, making it suitable for various computing applications requiring efficient memory performance. This memory chip operates with a data rate of up to 200 MHz, effectively doubling the rate of traditional SDRAM by transferring data on both the rising and falling edges of the clock cycle.
Key features include an operating voltage of 2.5V, 16M x 16-bit organization, and a burst length of 2, 4, or 8 for flexible data handling. The "5B" in its nomenclature indicates the specific speed grade and temperature range, ensuring compatibility with specific system requirements. The MT46V16M16P-5B:M is typically used in systems where fast data processing is crucial, such as in computers, networking equipment, and consumer electronics. Its efficient power consumption and robust data handling capabilities make it a popular choice for designers seeking high-performance memory solutions.

Equivalent

The MT46V16M16P-5B:M is a 256Mb DDR SDRAM. Equivalent products from other manufacturers may include:
1. Samsung: K4H561638J-LCB3
2. Hynix: HY57V561620FTP-H
3. Micron: MT46V16M16TG-5B
4. Elpida: EDD5116ADTA-6B
Ensure compatibility by checking data sheets for specifications such as speed, voltage, and package type.

Features

The MT46V16M16P-5B:M is a 256Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip. Key features include:
1. Density and Configuration: It offers a density of 256Mb, organized as 16M x 16 bits.

2. Data Rate and Speed: Operates at a data rate of up to 200 MT/s.
3. Voltage: Functions at a power supply voltage of 2.5V ± 0.2V.
4. Prefetch and Architecture: Utilizes a 2n prefetch architecture, effectively doubling the data rate without increasing the clock frequency.
5. Burst Lengths: Supports burst lengths of 2, 4, and 8, providing flexibility in data transfer.
6. CAS Latency: Offers CAS latency options of 2 and 2.5 for optimized performance.
7. Package: Available in a 66-pin TSOP package, providing a compact form factor.
8. Temperature Range: Designed to operate within a commercial temperature range of 0°C to 70°C.
These features make the MT46V16M16P-5B:M suitable for applications requiring moderate memory density, such as consumer electronics and computing systems.

Manufacturer

The MT46V16M16P-5B:M is a memory chip manufactured by Micron Technology, Inc. Micron is a leading global corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. The company is known for manufacturing dynamic random-access memory (DRAM), NAND flash memory, and other types of memory products used in a wide range of applications from consumer electronics to data centers. Micron is recognized for its innovation in memory technology and plays a crucial role in the development of high-performance and reliable memory solutions.

Application

The MT46V16M16P-5B:M is a type of DRAM, specifically a DDR SDRAM, used in various applications that require fast data access and high memory bandwidth. It is commonly used in computers and servers for handling intensive computations and multitasking. Additionally, this memory module can be found in networking equipment for managing data traffic efficiently, in consumer electronics like gaming consoles for better graphics processing, and in embedded systems for automotive and industrial applications where reliable and quick memory performance is crucial. Its applications extend to areas that demand efficient power consumption and increased speed, contributing to overall system performance enhancements.

Package

The MT46V16M16P-5B:M is a DRAM chip typically found in a 54-ball Fine-Pitch Ball Grid Array (FBGA) package. This type of packaging is compact and suitable for providing high performance and reliability, commonly used in memory modules for computing applications.

Frequently Asked Questions


Q: What is the memory type and organization of the MT46V16M16P-5B:M?
A: It is a volatile DDR SDRAM with a memory size of 256Mbit organized as 16M x 16 bits using a parallel interface.


Q: What is the maximum clock frequency this device supports?
A: It supports a maximum clock frequency of 200 MHz, with a corresponding access time of 700 ps.


Q: What is the voltage supply range required for operation?
A: The required supply voltage is 2.5V to 2.7V, typical for DDR SDRAM memory modules.


Q: What is the write cycle time for this component?
A: The write cycle time for word or page operations is rated at 15ns.


Q: What is the operating temperature range for the MT46V16M16P-5B:M?
A: It operates within a commercial temperature range of 0°C to 70°C (TA).


Q: What package type does this memory IC use?
A: It comes in a 66-TSSOP package with a 0.400-inch body width, supplied as a 66-TSOP device, and is packaged in a tray.


Q: Is this part still in production or available for new designs?
A: The part status is marked as "Obsolete" and it is not verified for use in new DigiKey-programmable designs.


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