Imagens apenas para referência
IC DRAM 1GBIT PARALLEL 60FBGA
-
FabricanteMicron Technology Inc.
-
Peça do Fabricante #MT47H128M8CF-3:H
-
Em Estoque2201
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
| Base Product Number | MT47H128M8 |
| Clock Frequency | 333 MHz |
| Access Time | 450 ps |
Visão Geral
Description
The MT47H128M8CF-3:H is a DRAM (Dynamic Random Access Memory) chip produced by Micron Technology. It is a 1Gb (128M x 8) DDR3 SDRAM component, designed for high-performance applications requiring fast data transfer speeds. This chip operates at a supply voltage of 1.5V and features a data rate of up to 1600 MT/s.
Key specifications include:
- Organization: 128 Meg x 8 bits
- Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
- Row Addressing: 13 bits
- Column Addressing: 10 bits
- Operating Temperature Range: Commercial grade or industrial grade options.
The device supports a variety of features like burst modes and is suitable for applications in computing, telecommunications, and consumer electronics where speed and efficiency are paramount. The "-3" in the part number indicates its speed grade.
Key specifications include:
- Organization: 128 Meg x 8 bits
- Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
- Row Addressing: 13 bits
- Column Addressing: 10 bits
- Operating Temperature Range: Commercial grade or industrial grade options.
The device supports a variety of features like burst modes and is suitable for applications in computing, telecommunications, and consumer electronics where speed and efficiency are paramount. The "-3" in the part number indicates its speed grade.
Equivalent
The MT47H128M8CF-3:H chip is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ1G83EFR
2. Samsung K4B4G0846B-HYK0
3. Micron MT41K256M8DA-125
4. Nanya NT5CB256M8DN-3C
These products offer similar specifications, including density and timing characteristics, making them suitable alternatives. Always verify compatibility before substitution.
1. Hynix H5TQ1G83EFR
2. Samsung K4B4G0846B-HYK0
3. Micron MT41K256M8DA-125
4. Nanya NT5CB256M8DN-3C
These products offer similar specifications, including density and timing characteristics, making them suitable alternatives. Always verify compatibility before substitution.
Features
The MT47H128M8CF-3:H is a DDR3 SDRAM memory chip from Micron Technology, featuring the following key specifications:
1. Density: 1 Gigabit (128MB x 8).
2. Architecture: x8 organization.
3. I/O Bus Width: 8 bits.
4. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
5. Voltage: Low voltage operation at 1.5V.
6. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
7. Functions: Supports burst mode, auto-refresh, and self-refresh modes.
8. Latency: CL=11 at 1600 MT/s.
9. Temperature Range: Commercial temperature range (0°C to 95°C).
10. Applications: Commonly used in consumer electronics, mobile devices, and computing applications requiring reliable high-speed memory.
This chip is designed for optimal performance in various applications, providing robust data integrity and low power consumption.
1. Density: 1 Gigabit (128MB x 8).
2. Architecture: x8 organization.
3. I/O Bus Width: 8 bits.
4. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
5. Voltage: Low voltage operation at 1.5V.
6. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
7. Functions: Supports burst mode, auto-refresh, and self-refresh modes.
8. Latency: CL=11 at 1600 MT/s.
9. Temperature Range: Commercial temperature range (0°C to 95°C).
10. Applications: Commonly used in consumer electronics, mobile devices, and computing applications requiring reliable high-speed memory.
This chip is designed for optimal performance in various applications, providing robust data integrity and low power consumption.
Pinout
The MT47H128M8CF-3:H is a DDR3 SDRAM memory chip with a pin count of 78. This device features a wide range of functions suited for high-performance applications, including:
- Memory Architecture: It is organized as 8 banks of 128 Meg x 8 bits, allowing for efficient data management.
- Data Rate: The device supports a data rate of up to 1600 MT/s.
- Power Supply: Operates with a core voltage of 1.5V, which is standard for DDR3.
- Access Modes: Supports burst lengths of 8 and 4, facilitating flexible data access.
- Chip Select: Features chip select (CS) functionality to enable individual chip addressing.
- Refresh: Includes self-refresh capability, which reduces power consumption during idle states.
This combination of features makes the MT47H128M8CF-3:H suitable for various applications in computing and consumer electronics.
- Memory Architecture: It is organized as 8 banks of 128 Meg x 8 bits, allowing for efficient data management.
- Data Rate: The device supports a data rate of up to 1600 MT/s.
- Power Supply: Operates with a core voltage of 1.5V, which is standard for DDR3.
- Access Modes: Supports burst lengths of 8 and 4, facilitating flexible data access.
- Chip Select: Features chip select (CS) functionality to enable individual chip addressing.
- Refresh: Includes self-refresh capability, which reduces power consumption during idle states.
This combination of features makes the MT47H128M8CF-3:H suitable for various applications in computing and consumer electronics.
Manufacturer
The MT47H128M8CF-3:H is manufactured by Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops a range of products, including DRAM (Dynamic Random-Access Memory), NAND flash memory, and 3D XPoint technology.
Micron's offerings are widely used in various applications, including computers, mobile devices, servers, and automotive systems. The company is known for its innovation in memory technology and its commitment to advancing data storage solutions. Micron serves multiple industries, including consumer electronics, enterprise, and cloud computing, making it one of the largest memory manufacturers globally.
With a focus on research and development, Micron aims to enhance performance and efficiency in memory and storage products, supporting the growing demands of data-centric applications.
Micron's offerings are widely used in various applications, including computers, mobile devices, servers, and automotive systems. The company is known for its innovation in memory technology and its commitment to advancing data storage solutions. Micron serves multiple industries, including consumer electronics, enterprise, and cloud computing, making it one of the largest memory manufacturers globally.
With a focus on research and development, Micron aims to enhance performance and efficiency in memory and storage products, supporting the growing demands of data-centric applications.
Application
The MT47H128M8CF-3:H is a DDR3 SDRAM memory chip designed for various applications, including consumer electronics, networking equipment, and industrial devices. It is commonly used in laptops, desktops, servers, and embedded systems due to its high performance and energy efficiency. Additionally, it supports tasks requiring quick data access, such as graphics processing, gaming, and data centers. Its reliability and scalability make it suitable for both personal and enterprise-level applications.
Package
The MT47H128M8CF-3:H is packaged in a 78-ball FBGA (Fine Ball Grid Array) package.
