MT47H256M8EB-25E:C

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MT47H256M8EB-25E:C

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IC DRAM 2GBIT PARALLEL 60FBGA

  • FabricanteMicron Technology Inc.

  • Peça do Fabricante #MT47H256M8EB-25E:C

  • Em Estoque3473

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Especificações

Atributo Valor
Part Status Last Time Buy
Base Product Number MT47H256M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 60-TFBGA
Supplier Device Package 60-FBGA (9x11.5)
Packaging Tray
Access Time 400 ps

Visão Geral

Description

The MT47H256M8EB-25E:C is a DRAM (Dynamic Random-Access Memory) component manufactured by Micron Technology. It is part of the DDR2 SDRAM family, which is designed to offer high-speed data transfer rates and reduced power consumption compared to its predecessor, DDR. This particular module features a 256 Megabit density configured in an 8-bit wide data path, making it suitable for high-performance computing applications. The -25E in its designation signifies a 2.5 ns cycle time, indicating its speed grade, and the :C typically denotes a specific revision or package type. DDR2 memory like the MT47H256M8EB-25E:C is used in a variety of electronic devices, including computers, networking equipment, and consumer electronics, where efficient and rapid data processing is essential. The module supports a range of features, including on-die termination, programmable read and write latencies, and power-saving modes, enhancing its suitability for demanding applications.

Equivalent

The MT47H256M8EB-25E:C is a DDR2 SDRAM chip from Micron. Equivalent products can include similar DDR2 SDRAM chips from other manufacturers like Samsung, Hynix, and Kingston. Look for chips with similar specifications, such as 2Gb density, 256Mx8 organization, 1.8V power supply, and similar speed grades (e.g., 800 MHz). Specific part numbers may vary, so consult the datasheets and compatibility guides from these manufacturers for precise equivalents.

Features

The MT47H256M8EB-25E:C is a DRAM component featuring the following key specifications:
1. Type: DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory).
2. Density: 2 Gb (Gigabits), organized as 256M x 8 bits.
3. Speed: Operates with a clock frequency of up to 400 MHz, providing a data rate of 800 MT/s (megatransfers per second).
4. Voltage: Requires a supply voltage of 1.8V ± 0.1V.
5. Package: Available in a 60-ball FBGA (Fine-Pitch Ball Grid Array) package.
6. CAS Latency: Supports multiple CAS (Column Address Strobe) latency settings, with typical values around CL = 5.
7. Features: Includes on-die termination (ODT) for improved signal integrity, programmable burst lengths, and automatic refresh operations.
8. Applications: Suitable for use in high-performance computing, servers, and other applications requiring efficient memory solutions.
These features make the MT47H256M8EB-25E:C a reliable and efficient choice for systems needing robust DDR2 memory performance.

Pinout

The MT47H256M8EB-25E:C is a DDR2 SDRAM component manufactured by Micron Technology. It features a 1Gb density and is organized as 128M x 8. The device typically comes in a 60-ball FBGA (Fine-Pitch Ball Grid Array) package.
Key functions of this DDR2 SDRAM include:
1. Data Storage and Retrieval: It provides temporary storage for data, allowing fast access and transfer.
2. High-Speed Operation: With a data rate of 800 MT/s, it supports high-performance computing applications.
3. Low Power Consumption: Designed to operate efficiently, minimizing power usage.
4. Burst Length of 4 or 8: Supports burst lengths of 4 or 8 for data transfer, optimizing bandwidth usage.
5. Auto Refresh and Self Refresh: Ensures data integrity and retention even when the system is in low-power states.
The 60-ball FBGA package allows for compact design integration, making it suitable for a variety of applications including computing and networking solutions.

Manufacturer

The MT47H256M8EB-25E:C is a DRAM (Dynamic Random-Access Memory) chip manufactured by Micron Technology, Inc. Micron is a leading global company based in the United States that specializes in the production of semiconductor devices, primarily memory and storage solutions. The company, founded in 1978, is known for its innovation and development of DRAM, NAND flash memory, and other semiconductor products used in computing, consumer electronics, telecommunications, and automotive applications. Micron's products are integral to various technology advancements, contributing to data storage and memory capabilities in a wide range of devices.

Application

The MT47H256M8EB-25E:C is a DRAM (Dynamic Random-Access Memory) component, specifically a DDR2 SDRAM chip. Its application areas include:
1. Computing Devices: Used in laptops, desktops, and servers to provide high-speed memory solutions.
2. Telecommunications: Supports data processing in networking equipment like routers and switches.
3. Consumer Electronics: Used in devices like smart TVs, gaming consoles, and set-top boxes for efficient data handling.
4. Embedded Systems: Provides memory for industrial automation, automotive systems, and medical devices.
5. Mobile Devices: Found in smartphones and tablets for improved performance and multitasking.
Overall, it is employed where moderate speed and density of memory are required.

Package

The MT47H256M8EB-25E:C is a DDR2 SDRAM chip from Micron Technology, housed in a 60-ball Fine-Pitch Ball Grid Array (FBGA) package.

Frequently Asked Questions


Q: What is the memory density and organization of the MT47H256M8EB-25E:C?
A: This device has a 2 Gbit density organized as 256M words x 8 bits (256M x 8), ideal for high-density parallel DRAM applications.


Q: What is the maximum operating clock frequency and access time?
A: It supports a clock frequency of 400 MHz (DDR2-800 data rate) with a 400 ps access time, ensuring fast read/write operations.


Q: What is the voltage supply range for this DDR2 SDRAM?
A: The operating voltage range is 1.7V to 1.9V, compatible with standard DDR2 power rails and low-power designs.


Q: Is this component suitable for industrial temperature environments?
A: Yes, it operates from 0°C to 85°C (TC), making it suitable for commercial and extended temperature applications.


Q: What is the package type and footprint for this device?
A: It comes in a 60-ball TFBGA package with a supplier device package of 60-FBGA (9x11.5 mm), surface-mount compatible.


Q: What is the write cycle time for word or page operations?
A: The write cycle time for word or page writes is 15 ns, supporting efficient burst writing in DDR2 systems.


Q: Can this memory be used for new designs or is it end-of-life?
A: The part status is "Last Time Buy," meaning it is nearing discontinuation; plan for last-time purchases or alternate sourcing.


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