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MT48LC8M16A2P-75IT:G
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FabricanteMicron Technology
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Peça do Fabricante #MT48LC8M16A2P-75IT:G
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Especificações
| Atributo | Valor |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Automotive | No |
| PPAP | No |
| Process Technology | CMOS |
| Minimum Operating Supply Voltage (V) | 3 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Temperature Grade | Industrial |
| Mounting Type | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 10.16 |
| Package Length | 22.22 |
| PCB changed | 54 |
| Package / Case | SO |
| Supplier Device Package | TSOP-II |
| Pin Count | 54 |
| Lead Shape | Gull-wing |
| Chip Density (bit) | 128M |
| Number of Bits / Word (bit) | 16 |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (M Hz) | 133 |
| DRAM Type | SDRAM |
| Organization | 8Mx16 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 2M |
| Address Bus Width (bit) | 14 |
| Operating Current (m A) | 150 |
| Number of I / O Lines (bit) | 16 |
| Maximum Access Time (ns) | 6|5.4 |
| Interface Type | LVTTL |
Visão Geral
Description
Key features include a 75 ns access time, which facilitates fast data retrieval and processing. The "IT" designation indicates that it is a commercial-grade part, and the "G" at the end signifies that it is RoHS-compliant, meaning it is free from hazardous substances.
This memory chip is typically used in high-performance memory applications, such as in graphics cards, servers, and embedded systems. Its design supports various operational modes, including burst read and write operations, enhancing data throughput.
Overall, the MT48LC8M16A2P-75IT:G is an efficient, reliable solution for meeting the memory demands of modern computing environments.
Equivalent
1. Hynix HMT112S6CFR8C-PB
2. Samsung K4S641632E-TC75
3. Micron MT48LC8M16A2P-75:G
4. Nanya NT5CB256M8FN-75
Always verify specifications like speed, voltage, and pin configuration to ensure compatibility.
Features
1. Configuration: 8 Meg x 16 bits organization, enabling efficient data handling.
2. Density: Offers a total capacity of 128 Megabits.
3. Speed: Operates at a maximum clock frequency of 75 MHz, providing a fast data transfer rate.
4. Interface: Asynchronous interface, suitable for easy integration with other components.
5. Power: Operates on a supply voltage of 2.5V, optimizing power consumption for energy efficiency.
6. Temperature Range: Industrial temperature range (-40°C to +85°C), ensuring reliability in various environments.
7. Packaging: Available in a 54-pin TSOP II package, facilitating compact designs.
This DRAM chip is ideal for applications requiring reliable performance and efficient data processing in a compact form factor.
Pinout
Key pin functions include:
- Data Pins (DQ0-DQ15): 16 data lines for input/output.
- Address Pins (A0-A11): Used to select memory locations.
- Control Pins (CS, RAS, CAS): Control signals for chip selection and read/write operations.
- Clock Pin (CLK): Synchronizes data transfers.
- VDD and VSS: Power supply and ground connections.
- WE (Write Enable): Activates write operations.
- OE (Output Enable): Activates read operations.
This chip is designed for high-speed applications requiring reliable data storage, making it suitable for various electronic devices.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum clock frequency supported by this SDRAM?
A: The MT48LC8M16A2P-75IT:G supports a maximum clock rate of 133 MHz for high-speed data transfers.
Q: What is the operating voltage range for this device?
A: It operates between 3.0V and 3.6V, with a typical supply voltage of 3.3V.
Q: What is the total memory density and organization?
A: It has a 128Mbit density, organized as 8M words by 16 bits per word (8Mx16).
Q: Is this component suitable for industrial temperature applications?
A: Yes, it supports an industrial temperature range from -40°C to +85°C.
Q: What is the typical power consumption during operation?
A: The typical operating current is 150 mA under normal active conditions.
Q: Does this SDRAM support multiple internal banks?
A: Yes, it features 4 internal banks, each containing 2M words, enabling efficient interleaving.
Q: What is the maximum access time for this memory?
A: The maximum access time is 6 ns (CL=3) or 5.4 ns (CL=2), depending on the CAS latency setting.
