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MT48LC8M16LFB4-8:G
+Lista de MateriaisIC DRAM 128MBIT PAR 54VFBGA
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT48LC8M16LFB4-8:G
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Ficha Técnica MT48LC8M16LFB4-8:G DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 125 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 7 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-VFBGA |
| Supplier Device Package | 54-VFBGA (8x8) |
| Base Product Number | MT48LC8M16 |
Visão Geral
Description
Key features include:
- Package Type: FBGA (Fine Ball Grid Array) for compact design.
- Operating Temperature: Typically commercial, ideal for consumer electronics.
- High-speed I/O for efficient data transfer.
- 8 banks for improved performance and throughput.
- Integrated power-saving features to enhance energy efficiency.
The suffix “:G” indicates that the product is lead-free and complies with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. This chip is widely used in computers, networking equipment, and industrial applications where reliable and fast memory access is essential.
Equivalent
1. Hynix H5TQ1G83EFR-PBA
2. Samsung K4B4G1646D-BCK0
3. Micron MT41K512M16HA-125
4. Elpida EDJ51016AFJ-5B
Always verify specific specifications and compatibility for your application.
Features
1. Configuration: 8 Meg x 16 bit organization.
2. Data Rate: Operates with a speed grade of 4 (4ns access time).
3. Voltage: Powered by a core voltage of 1.8V, supporting energy efficiency.
4. Interface: Synchronous Dynamic RAM (SDRAM) supports high-speed data transfer.
5. Package: Available in a 54-ball Fine-Pitch BGA package, facilitating compact PCB design.
6. Operating Temperature: Suitable for industrial applications with a temperature range of -40°C to +85°C.
7. Features: Includes features like power-saving modes and burst mode for efficient data access.
8. Refresh: Supports automated refresh cycles to maintain data integrity.
This memory chip is ideal for various applications, including telecommunications, networking, and industrial control systems.
Pinout
- Data Pins (DQ0-DQ7): 8 data lines for bidirectional data transfer.
- Address Pins (A0-A11): Used for selecting memory locations.
- Control Pins: Includes clocks (CLK, CLK#), chip enable (CE#), and read/write (R/W#) signals.
- Bank Address Pins (BA0-BA1): To select the memory bank.
- Mode Register Set (MRS) pins: For configuring the memory.
- Power and Ground Pins: For providing power (VDD) and grounding (VSS).
- Other Control Pins: Such as Write Enable (WE#), Output Enable (OE#), and others for controlling the memory operation.
This chip operates at a voltage of 2.5V and is designed for applications requiring low power consumption and high-speed data access.
Manufacturer
Micron is one of the largest memory manufacturers globally, competing with other industry giants like Samsung, SK Hynix, and Western Digital. Their products are essential for various electronic devices, enhancing performance and storage capabilities. Micron emphasizes research and development, focusing on advanced memory technologies to meet the growing demands of data-intensive applications and systems.
In summary, Micron Technology, Inc. is a significant player in the semiconductor industry, specifically known for its memory and storage solutions.