MT53E2G32D4DE-046WT:C

The MT53E2G32D4DE-046WT:C is a DDR3 SDRAM memory chip produced by Micron Technology. It features a capacity of 2 gigabits (Gb) and is organized as 256 megabytes x 32 bits, making it suitable for various applications in computing and mobile devices. The chip operates at a data rate of 1,600 MT/s (mega-transfers per second) and is designed for low power consumption, making it ideal for energy-efficient systems.
This memory module is typically used in mobile applications, including smartphones and tablets, where space and power efficiency are critical. The “046” in its designation may refer to specific configurations or manufacturing details, while the “WT” indicates it is a part of the lead-free product line. The “C” at the end suggests compliance with certain environmental standards. Overall, this memory component is designed to deliver reliable performance in compact and power-sensitive environments.

The MT53E2G32D4DE-046WT:C chip is a mobile DRAM component from Micron. Equivalent products may include other low-power DDR4 memory chips with similar specifications, such as those from Samsung (K4A8G085WB-BCTD), SK Hynix (H5GQ2H24AFR), and others that meet the same density, speed, and voltage requirements. Always verify compatibility with your specific application.

The MT53E2G32D4DE-046WT:C is a mobile DRAM chip from Micron Technology. It features a 2GB capacity, utilizing DDR3 (Double Data Rate 3) technology, which enables high-speed data transfer rates. The chip is designed with a 32-bit wide data interface, allowing for efficient communication with processors.
Key specifications include a 1.5V operating voltage, which helps in reducing power consumption, making it suitable for mobile and embedded applications. The "046WT" part denotes the speed grade, indicating it can operate at a data rate of 1066 MT/s (megatransfers per second).
Additionally, it complies with the JEDEC standards for DRAM, ensuring compatibility and reliability. The MT53E2G32D4DE-046WT:C is optimized for low latency and efficiency, making it suitable for use in smartphones, tablets, and other portable devices where performance and energy efficiency are critical. Overall, this DRAM chip balances capacity, speed, and power efficiency for modern mobile applications.

The MT53E2G32D4DE-046WT:C is a 2Gb DDR3 SDRAM memory device from Micron Technology. It features a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
Pin Count: 78 balls
Function:
- It operates with a data width of 32 bits and supports a variety of functions including read and write operations, as well as burst accesses.
- The device supports a data rate of 1600 MT/s (megatransfers per second) with a supply voltage of 1.5V.
- It includes features such as on-die termination (ODT), and it is optimized for low power consumption and high performance in applications like mobile devices and embedded systems.
For detailed specifications, refer to the product datasheet.

The manufacturer of the MT53E2G32D4DE-046WT:C is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a variety of products, including DRAM, NAND flash memory, and solid-state drives (SSDs).
Micron's products are used in a wide range of applications, from consumer electronics to data centers and automotive systems. The company is known for its focus on innovation and advanced manufacturing processes, which enable it to deliver high-performance and reliable memory solutions. Micron operates as a publicly traded company and is an essential player in the memory market, competing with other major manufacturers like Samsung and SK Hynix. Overall, Micron Technology is recognized for its contributions to the development of memory technologies that power modern computing and data storage needs.

The MT53E2G32D4DE-046WT:C is a high-performance DRAM memory chip from Micron Technology, primarily used in mobile devices, such as smartphones and tablets. Its applications extend to automotive systems, consumer electronics, and various computing devices that require efficient, high-speed memory solutions for improved performance and multitasking capabilities. The chip's low power consumption and high data transfer rates make it suitable for applications in gaming, virtual reality, and other demanding environments that benefit from enhanced memory throughput.

The MT53E2G32D4DE-046WT:C is a memory chip packaged in a 78-ball FBFGA (Fine Ball Grid Array) format. This type of package features a compact design suitable for high-density applications, commonly used in mobile and embedded devices.