Imagens apenas para referência
IC DRAM 16GBIT POD 180FBGA
-
FabricanteMicron Technology Inc.
-
Peça do Fabricante #MT61K512M32KPA-16:E
-
Em Estoque24413
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | MT61K512 |
| Memory Format | DRAM |
| Technology | SGRAM - GDDR6 |
| Memory Size | 16Gbit |
| Memory Organization | 512M x 32 |
| Memory Interface | POD_135 |
| Packaging | Tray |
Visão Geral
Description
MT61K512M32KPA-16:E is a Micron memory device (MT61K family). It is a DRAM chip used as a fast, volatile storage element in embedded/portable systems. Key points:
- Density/organization: approximately 512 megabits of storage; designed with a wide data interface and banked structure (typical MT61K devices use multi-bank organization and sizable page sizes).
- Interface and timing: synchronous DRAM interface that requires proper clocking and command sequencing (ACT, READ/WRITE, PRECHARGE, REFRESH).
- Electricals: low-voltage operation with standard DRAM power and decoupling requirements; timing parameters depend on the exact variant.
- Suffix meaning (typical): -16 denotes a speed grade (around 16 ns or equivalent performance parameter); E often indicates an extended temperature grade.
Note: exact word size, bank count, voltage, and timing are variant-dependent. For precise specs (data width, organization, voltage, timings, and temperature range), consult the official Micron MT61K512M32KPA-16:E datasheet.
- Density/organization: approximately 512 megabits of storage; designed with a wide data interface and banked structure (typical MT61K devices use multi-bank organization and sizable page sizes).
- Interface and timing: synchronous DRAM interface that requires proper clocking and command sequencing (ACT, READ/WRITE, PRECHARGE, REFRESH).
- Electricals: low-voltage operation with standard DRAM power and decoupling requirements; timing parameters depend on the exact variant.
- Suffix meaning (typical): -16 denotes a speed grade (around 16 ns or equivalent performance parameter); E often indicates an extended temperature grade.
Note: exact word size, bank count, voltage, and timing are variant-dependent. For precise specs (data width, organization, voltage, timings, and temperature range), consult the official Micron MT61K512M32KPA-16:E datasheet.
Equivalent
Exact equivalents depend on memory type, package, voltage and speed. MT61K512M32KPA-16:E is a Micron MT61K-series device; to give pin-compatible substitutes I need specs or the datasheet. Please confirm:
- memory type and organization (e.g., 512M x 32)
- package
- operating voltage
- speed grade
With those, I can map to potential Hynix/Samsung/Micron equivalents.
- memory type and organization (e.g., 512M x 32)
- package
- operating voltage
- speed grade
With those, I can map to potential Hynix/Samsung/Micron equivalents.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash) for computers and electronics.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash) for computers and electronics.
Application
Potential application areas for MT61K512M32KPA-16:E include:
- Mobile and embedded systems (smartphones, tablets, wearables)
- Graphics, video buffers and display memory (set-top boxes, TVs, cameras)
- Automotive applications (infotainment, ECUs, ADAS memory)
- Networking and telecommunications equipment (routers, switches, base stations)
- Industrial and consumer electronics (POS systems, printers, medical devices)
Note: it is a high-density memory device suitable for main memory or buffer roles where large capacity and efficiency are required.
- Mobile and embedded systems (smartphones, tablets, wearables)
- Graphics, video buffers and display memory (set-top boxes, TVs, cameras)
- Automotive applications (infotainment, ECUs, ADAS memory)
- Networking and telecommunications equipment (routers, switches, base stations)
- Industrial and consumer electronics (POS systems, printers, medical devices)
Note: it is a high-density memory device suitable for main memory or buffer roles where large capacity and efficiency are required.
Package
FBGA (Fine-pitch Ball Grid Array); RoHS-compliant lead-free (-E).
