MUN5235DW1T1G

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MUN5235DW1T1G

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TRANS 2NPN PREBIAS 0.25W SOT363

  • Fabricanteonsemi

  • Peça do Fabricante #MUN5235DW1T1G

  • Pacote SOT-363-6

  • Em Estoque7285

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector(Ic)(Max) 100mA
Voltage - Collector Emitter Breakdown(Max) 50V
Resistor - Base(R1) 2.2kOhms
Resistor - Emitter Base(R2) 47kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff(Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount

Visão Geral

Description

The MUN5235DW1T1G is a NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplification and switching applications. Key features include:
- Configuration: Dual NPN transistors in a single package (SOT-363).
- Voltage Rating: 50V collector-emitter (VCEO).
- Current Handling: 100mA continuous collector current (IC).
- Low Saturation Voltage: Ensures efficient switching.
- High Current Gain (hFE): Typically 100–300 for stable amplification.
Common uses include signal amplification, load switching, and digital logic circuits. Its compact SMD package makes it suitable for space-constrained PCBs.
For detailed specs, refer to the datasheet from ON Semiconductor.

Features

The MUN5235DW1T1G is a dual NPN digital transistor with built-in resistors, designed for general-purpose switching and amplification. Key features:
- Type: Dual NPN bipolar transistor (2-in-1 package).
- Built-in resistors: Base resistors (R1 = R2 = 10 kΩ) for simplified circuit design.
- Low voltage/current operation: Suitable for 50V, 100mA applications.
- Compact package: SOT-363 (SC-88) for space-saving PCB layouts.
- Applications: Load switching, interface circuits, and logic level conversion.
Ideal for portable electronics and automated systems requiring small, efficient components.

Pinout

The MUN5235DW1T1G is a dual NPN digital transistor with built-in resistors, housed in a SOT-363 (SC-88) package.
- Pin count: 6 pins (2 transistors, each with base, emitter, and collector).
- Functions:
- Pins 1 & 4: Base inputs (with integrated resistors).
- Pins 2 & 5: Emitter outputs (typically grounded).
- Pins 3 & 6: Collector outputs (connect to load).
Designed for switching and amplification in digital circuits, it simplifies PCB design by eliminating external resistors. Common applications include load switching, inverters, and interface circuits.

Manufacturer

The MUN5235DW1T1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient technologies for various industries, including automotive, industrial, and consumer electronics. Known for innovation and reliability, the company produces a wide range of components like power management ICs, transistors, and diodes.
The MUN5235DW1T1G is a dual NPN digital transistor with built-in resistors, commonly used in switching and amplification applications.

Package

The MUN5235DW1T1G is a dual NPN bias resistor transistor (BRT) in a SOT-363 (SC-88) surface-mount package. It integrates bias resistors, reducing component count in circuits. The package is compact, measuring approximately 2.0 x 1.25 x 0.8 mm, suitable for space-constrained applications.

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