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NCE0110AK
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FabricanteWuxi NCE Power Semiconductor
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Peça do Fabricante #NCE0110AK
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Ficha Técnica NCE0110AK DataSheet
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Especificações
| Atributo | Valor |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TO-252-2 |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 10A |
| Pd - Power Dissipation | 40W |
| Drain to Source Voltage (Vdss) | 100V |
| Rds(on) | 130mΩ@10V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 2V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 21.5nC@50V |
| Input Capacitance(Ciss @ Vds) | 980pF@50V |
| Reverse Transfer Capacitance (Crss @ Vds) | 27pF |
Visão Geral
Description
The component typically comes in a compact package, allowing for easy integration into printed circuit boards (PCBs). It operates efficiently at standard voltages and currents, providing durability and stable performance. Engineers favor the NCE0110AK for its balance between performance and cost, as well as its reliability in various environmental conditions. Understanding its specifications and capabilities is crucial for designing efficient electronic systems, ensuring optimal performance in the intended application.
Equivalent
Features
1. Voltage and Current Rating: It typically supports high voltage and current ratings, making it suitable for demanding power management tasks.
2. Low On-Resistance: The MOSFET features low on-resistance, which helps in reducing power losses and improving efficiency, especially in switching applications.
3. Fast Switching Speed: It offers rapid switching capability, which is beneficial for high-frequency applications.
4. Thermal Performance: The package is often designed to enhance heat dissipation, ensuring reliable operation under high-temperature conditions.
5. Robust Design: It usually includes features for ruggedness and reliability, such as avalanche energy rating, to withstand voltage spikes.
6. Compact Package: Comes in a compact package, making it suitable for space-constrained applications.
These features make the NCE0110AK suitable for use in power supplies, motor drives, and other high-power applications where efficiency and reliability are crucial. Always refer to the specific datasheet for its precise specifications and application guidelines.
Pinout
1. Gate (G): This pin is used to control the conductivity of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): This is the terminal where the current enters the MOSFET. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the terminal where the current exits the MOSFET. It is typically connected to the ground or a reference point in the circuit.
For precise specifications and to verify the pinout, it’s best to consult the datasheet provided by the manufacturer or supplier.