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NCE80H16
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FabricanteWuxi NCE Power Semiconductor
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Peça do Fabricante #NCE80H16
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Especificações
| Atributo | Valor |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TO-220 |
| Rds(on) | 4.7mΩ@10V,20A |
| Drain to Source Voltage (Vdss) | 80V |
| Pd - Power Dissipation | 285W |
| Current - Continuous Drain(Id) | 160A |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
Visão Geral
Description
The architecture is optimized for low power consumption, making it suitable for battery-operated devices. The NCE80H16 also supports various development tools and environments, facilitating easier programming and debugging. Its robust architecture allows for multitasking and real-time operations, making it a versatile choice for developers.
Additionally, the microcontroller is designed to offer scalability and flexibility, accommodating various memory configurations and expansion options. Overall, the NCE80H16 stands out for its balance of performance, efficiency, and adaptability, making it an excellent choice for modern embedded applications.
Equivalent
Features
1. High Voltage Rating: Supports a maximum collector-emitter voltage of 1,600 V, suitable for high-voltage applications.
2. Current Capacity: Capable of handling continuous collector currents of up to 80 A, making it suitable for demanding power applications.
3. Low Switching Losses: Designed for efficient operation, with minimized switching losses, enhancing overall system efficiency.
4. Thermal Performance: Equipped with a robust thermal design that allows for effective heat dissipation, ensuring reliability under high-load conditions.
5. Integrated Features: Often includes integrated diodes for freewheeling, enhancing circuit design simplicity.
6. Compact Design: Offers a compact package that facilitates easy integration into existing systems.
7. Robust Isolation: Provides excellent electrical isolation, ensuring safety and reliability in operation.
These features make the NCE80H16 suitable for high-efficiency, high-power applications.