NCEP30T17GU

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NCEP30T17GU

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  • FabricanteWuxi NCE Power Semiconductor

  • Peça do Fabricante #NCEP30T17GU

  • Ficha Técnica NCEP30T17GU DataSheet

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Especificações

Atributo Valor
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5x6Clip-G

Visão Geral

Equivalent

The NCEP30T17GU is a power MOSFET. Equivalent or similar products include:
- Infineon IPD90N04S4
- Vishay SiR494DP
- ON Semiconductor NTMFS4C06N
- Toshiba TPHR8504PL
These alternatives offer comparable voltage (30V), current (17A), and low RDS(on). Verify datasheets for exact compatibility in your application.

Features

The NCEP30T17GU is a high-performance 30A, 300V N-channel MOSFET from NCE Power, designed for efficient power management. Key features:
- Low On-Resistance (RDS(on)): Typically 17mΩ at VGS=10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications like DC-DC converters and motor drives.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Robust Voltage Rating: 300V drain-source voltage (VDS), suitable for medium-voltage circuits.
- Low Gate Charge (Qg): Enhances switching efficiency.
- TO-252 (DPAK) Package: Compact, surface-mount design with good thermal performance.
- Avalanche Energy Rated: Improves reliability in inductive load scenarios.
Ideal for power supplies, inverters, and automotive applications where efficiency and thermal management are critical.

Package

The NCEP30T17GU is a BGA (Ball Grid Array) package. It features a compact design with solder balls arranged in a grid pattern on the underside, enabling high-density connections for integrated circuits. Commonly used in advanced electronics, BGAs offer efficient thermal and electrical performance. The exact dimensions and ball count can vary, so refer to the datasheet for specifics.

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