NGTB25N120FL2WG

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NGTB25N120FL2WG

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IGBT FIELD STOP 1200V 50A TO247

  • Fabricanteonsemi

  • Peça do Fabricante #NGTB25N120FL2WG

  • Pacote TO-247-3

  • Em Estoque6560

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Especificações

Atributo Valor
Package / Case Bulk,Tube
Part Status Active
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown(Max) 1200 V
Current - Collector(Ic)(Max) 50 A
Current - Collector Pulsed(Icm) 100 A
Vce(on)(Max) @ Vge Ic 2.4V @ 15V, 25A
Power - Max 385 W
Switching Energy 1.95mJ (on), 600µJ (off)
Input Type Standard
Gate Charge 178 nC
Td(on / off) @ 25°C 87ns/179ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 154 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Visão Geral

Features

The NGTB25N120FL2WG is a high-performance IGBT with the following key features:
- Voltage Rating: 1200V
- Current Rating: 25A (continuous)
- Low VCE(sat): 1.85V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: Short-circuit withstand capability (5µs)
- Temperature Range: -55°C to +150°C
- Low Gate Charge (QG): Enhances efficiency in switching applications
- Diode Integrated: Co-packaged freewheeling diode for simplified design
- Package: TO-247 (isolated baseplate for better thermal management)
Ideal for motor drives, inverters, and power converters requiring high efficiency and reliability.

Pinout

The NGTB25N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) module with the following key specifications:
- Pin Count: Typically 3 main terminals (Collector, Emitter, Gate) plus auxiliary connections (e.g., temperature sensor, gate driver pins). Exact count depends on the package (e.g., 7–12 pins in common modules).
- Function: High-power switching (1200V, 25A rating) for applications like motor drives, inverters, and industrial power systems.
- Features: Low VCE(sat), fast switching, and integrated freewheeling diode for efficiency.
For precise pinout, refer to the datasheet (e.g., Infineon or manufacturer documentation).

Manufacturer

The NGTB25N120FL2WG is manufactured by ON Semiconductor (now known as onsemi).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They provide solutions for automotive, industrial, and consumer applications, focusing on energy efficiency and high-performance electronics.
The NGTB25N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.

Application

The NGTB25N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. Key application areas include:
- Motor Drives (industrial, automotive, HVAC)
- Power Supplies (UPS, inverters, converters)
- Renewable Energy Systems (solar/wind inverters)
- Welding Equipment (arc/induction welding)
- Induction Heating (industrial heating systems)
Its high voltage (1200V) and current (25A) ratings, along with low switching losses, make it suitable for efficient energy conversion in demanding environments.

Package

The NGTB25N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247-3L package. This package type is a through-hole, three-lead design, commonly used for high-power applications due to its robust thermal and electrical performance. It features a flange for heatsink mounting, ensuring efficient heat dissipation.

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