NGTG15N60S1EG

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IGBT NPT 600V 30A TO-220AB

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Especificações

Atributo Valor
Part Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 30 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A
Power - Max 117 W
Switching Energy 550µJ (on), 350µJ (off)
Input Type Standard
Gate Charge 88 nC
Td (on / off) @ 25°C 65ns/170ns
Test Condition 400V, 15A, 22Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Base Product Number NGTG15
Current - Collector Pulsed (Icm) 120 A

Visão Geral

Description

The NGTG15N60S1EG is a high-voltage, N-channel MOSFET designed for power applications. With a voltage rating of 600V and a continuous drain current of 15A, it is suitable for various switching and amplification tasks in power electronics. The device features low on-resistance (R_DS(on)), which enhances efficiency by minimizing conduction losses during operation. This MOSFET is often utilized in applications like power supplies, motor drives, and industrial equipment, where efficient energy conversion is crucial.
The NGTG15N60S1EG benefits from a robust design that allows it to handle high-voltage environments, making it ideal for applications requiring reliable performance under extreme conditions. Additionally, its fast switching capabilities contribute to improved system performance and reduced heat generation, which is essential for maintaining component longevity. Overall, this MOSFET is a valuable component for engineers and designers looking to optimize power management in advanced electronic systems.

Equivalent

The NGTG15N60S1EG is a 600V, 15A N-channel MOSFET. Equivalent products include the STP15NM60, IRF840, FQP15N60, and the MTP15N60. Always check the datasheets for specific parameters such as RDS(on), gate charge, and thermal characteristics to ensure compatibility for your application.

Features

The NGTG15N60S1EG is a 15A, 600V N-channel power MOSFET designed for efficient power switching applications. Key features include:
1. High Voltage Capability: With a maximum drain-source voltage (Vds) of 600V, it is suitable for high-voltage applications.
2. Low On-Resistance: Offers a low RDS(on) value, which reduces conduction losses and improves efficiency.
3. Fast Switching Speed: Enables quick turn-on and turn-off times, making it ideal for high-frequency applications.
4. Thermal Performance: Designed to handle significant thermal dissipation, ensuring reliable operation at elevated temperatures.
5. Robust Gate Threshold Voltage: Provides a stable operation even in varying gate drive conditions.
6. Package Type: Typically available in TO-220 or similar packages for easy heatsinking and integration into designs.
These features make the NGTG15N60S1EG suitable for applications such as power supplies, motor drives, and inverters.

Pinout

The NGTG15N60S1EG is a 600V, 15A N-channel MOSFET. It typically comes in a TO-247 package, which features 4 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the device is turned on.
3. Source (S) - This pin is connected to the negative side of the power supply or ground, completing the circuit.
4. Tab (T) - The tab serves as a heat sink and is typically connected to the source for thermal management.
The NGTG15N60S1EG is designed for high-efficiency switching applications, commonly used in power converters and motor control circuits.

Manufacturer

The NGTG15N60S1EG is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and produces a wide range of semiconductor components, including power management, analog devices, sensors, and custom integrated circuits. The company serves various industries, including automotive, industrial, consumer electronics, and communications.
Founded in 1999, ON Semiconductor has grown through a series of acquisitions, expanding its product portfolio and market reach. It focuses on delivering energy-efficient solutions and innovative technologies that drive the development of smart, connected devices. The company's commitment to sustainability and efficiency reflects its mission to enable customers to create cutting-edge solutions while reducing energy consumption and environmental impact.
With a strong emphasis on research and development, ON Semiconductor continually invests in advanced technologies to meet the evolving needs of its customers and the market.

Application

The NGTG15N60S1EG is a high-voltage MOSFET used primarily in power electronics applications. Its key application areas include:
1. Power Supplies: Enhancing efficiency in switch-mode power supplies (SMPS).
2. Inverters: Utilized in renewable energy systems, such as solar inverters.
3. Motor Drives: Employed in electric motor control for industrial and automotive applications.
4. DC-DC Converters: Used in various voltage regulation and conversion tasks.
5. Lighting: Suitable for LED driver circuits.
These applications leverage its high voltage and current handling capabilities, making it ideal for efficient power management solutions.

Package

The NGTG15N60S1EG is packaged in a TO-247 form factor, which is a three-terminal package commonly used for high-power MOSFETs. This package provides efficient heat dissipation and is suitable for various applications in power electronics.

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