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IGBT NPT 600V 30A TO-220AB
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Fabricanteonsemi
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Peça do Fabricante #NGTG15N60S1EG
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Ficha Técnica NGTG15N60S1EG DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 30 A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 15A |
| Power - Max | 117 W |
| Switching Energy | 550µJ (on), 350µJ (off) |
| Input Type | Standard |
| Gate Charge | 88 nC |
| Td (on / off) @ 25°C | 65ns/170ns |
| Test Condition | 400V, 15A, 22Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Base Product Number | NGTG15 |
| Current - Collector Pulsed (Icm) | 120 A |
Visão Geral
Description
The NGTG15N60S1EG benefits from a robust design that allows it to handle high-voltage environments, making it ideal for applications requiring reliable performance under extreme conditions. Additionally, its fast switching capabilities contribute to improved system performance and reduced heat generation, which is essential for maintaining component longevity. Overall, this MOSFET is a valuable component for engineers and designers looking to optimize power management in advanced electronic systems.
Equivalent
Features
1. High Voltage Capability: With a maximum drain-source voltage (Vds) of 600V, it is suitable for high-voltage applications.
2. Low On-Resistance: Offers a low RDS(on) value, which reduces conduction losses and improves efficiency.
3. Fast Switching Speed: Enables quick turn-on and turn-off times, making it ideal for high-frequency applications.
4. Thermal Performance: Designed to handle significant thermal dissipation, ensuring reliable operation at elevated temperatures.
5. Robust Gate Threshold Voltage: Provides a stable operation even in varying gate drive conditions.
6. Package Type: Typically available in TO-220 or similar packages for easy heatsinking and integration into designs.
These features make the NGTG15N60S1EG suitable for applications such as power supplies, motor drives, and inverters.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the device is turned on.
3. Source (S) - This pin is connected to the negative side of the power supply or ground, completing the circuit.
4. Tab (T) - The tab serves as a heat sink and is typically connected to the source for thermal management.
The NGTG15N60S1EG is designed for high-efficiency switching applications, commonly used in power converters and motor control circuits.
Manufacturer
Founded in 1999, ON Semiconductor has grown through a series of acquisitions, expanding its product portfolio and market reach. It focuses on delivering energy-efficient solutions and innovative technologies that drive the development of smart, connected devices. The company's commitment to sustainability and efficiency reflects its mission to enable customers to create cutting-edge solutions while reducing energy consumption and environmental impact.
With a strong emphasis on research and development, ON Semiconductor continually invests in advanced technologies to meet the evolving needs of its customers and the market.
Application
1. Power Supplies: Enhancing efficiency in switch-mode power supplies (SMPS).
2. Inverters: Utilized in renewable energy systems, such as solar inverters.
3. Motor Drives: Employed in electric motor control for industrial and automotive applications.
4. DC-DC Converters: Used in various voltage regulation and conversion tasks.
5. Lighting: Suitable for LED driver circuits.
These applications leverage its high voltage and current handling capabilities, making it ideal for efficient power management solutions.