Imagens apenas para referência
NP100P06PDG-E1-AY
+Lista de MateriaisMOSFET P-CH 60V 100A TO263
-
FabricanteRenesas Electronics Corporation
-
Peça do Fabricante #NP100P06PDG-E1-AY
-
Em Estoque5611
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 10 V |
| Power Dissipation (Max) | 1.8W (Ta), 200W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | NP100P06 |
Visão Geral
Description
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The NP100P06PDG-E1-AY is packaged in a surface-mount format, making it suitable for compact designs.
Engineered for reliability and performance, it supports fast switching times, enhancing overall circuit efficiency. When selecting this MOSFET for a project, it's essential to consider parameters like thermal management, gate drive requirements, and the specific application demands to optimize performance.
Equivalent
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium-voltage applications.
2. Current Rating: This MOSFET can handle continuous drain currents of up to approximately 100A, depending on the thermal management and application conditions.
3. Low R_DS(on): It features a low on-state resistance, enhancing efficiency and reducing power loss during operation.
4. Fast Switching Speed: This attribute contributes to improved performance in high-frequency applications.
5. Thermal Stability: Designed to operate effectively in various thermal environments, it often includes a robust package for better heat dissipation.
6. Gate Threshold Voltage (V_GS(th)): Typically low, facilitating easy drive capability.
These features make the NP100P06PDG-E1-AY ideal for applications in power supplies, motor drives, and other switching power applications. Always consult the datasheet for specific electrical characteristics and ratings.
Pinout
The pin configuration typically includes:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
The additional pins may include options for heat dissipation or protection features, depending on the specific package design. This MOSFET is optimized for low on-resistance and fast switching speeds, making it suitable for use in power supplies, converters, and motor control applications.
For exact pin assignments and specifications, it is recommended to consult the manufacturer's datasheet for detailed information.
Manufacturer
Headquartered in Phoenix, Arizona, ON Semiconductor has a strong commitment to sustainability and aims to deliver high-performance products while minimizing environmental impact. The company serves a diverse clientele and is known for its extensive portfolio of semiconductor products that cater to the evolving needs of the electronics industry.