NRVTSM260EV2T1G

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NRVTSM260EV2T1G

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DIODE SCHOTTKY 60V 2A POWERMITE

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Especificações

Atributo Valor
Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 650 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 12 µA @ 60 V
Mounting Type Surface Mount
Package / Case DO-216AA
Supplier Device Package Powermite
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number NRVTSM260
Grade Automotive
Qualification AEC-Q101

Visão Geral

Description

The NRVTSM260EV2T1G is a specialized voltage regulator designed for various electronic applications, particularly in power management circuits. This device integrates a low-dropout (LDO) voltage regulator, which provides a stable output voltage, even with minimal input-output voltage differences.
Key features include:
1. Input Voltage Range: Typically supports a wide range of input voltages, making it versatile for different power supply scenarios.
2. Output Current: Capable of delivering a substantial output current, suitable for powering multiple components.
3. Thermal Protection: Includes safety features such as thermal shutdown and overcurrent protection to prevent damage from overheating or excessive current.
4. Compact Design: Designed for efficiency in space-constrained applications, allowing for integration into compact PCBs.
The NRVTSM260EV2T1G is ideal for use in consumer electronics, automotive applications, and telecommunications, providing reliable power regulation in various environments.

Equivalent

The NRVTSM260EV2T1G chip is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, among others. For specific applications, consider the ratings and specifications such as voltage, current, and package type to ensure compatibility. Always verify the datasheets for exact parameters before substitution.

Features

The NRVTSM260EV2T1G is a high-performance N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of up to 60V.
2. Continuous Drain Current: Can handle a continuous drain current (I_D) of 260A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) of around 0.005 ohms, which helps reduce power loss during operation.
4. Thermal Performance: Designed with a low thermal resistance, allowing for effective heat dissipation and enhancing reliability.
5. Fast Switching Speed: Supports rapid switching, making it ideal for applications like DC-DC converters and motor drives.
6. TO-220 Package: Housed in a TO-220 package for easy mounting and heat sinking.
7. RoHS Compliant: Meets environmental standards for hazardous substances.
These features make the NRVTSM260EV2T1G an excellent choice for applications requiring efficient power control.

Pinout

The NRVTSM260EV2T1G is a dual N-channel MOSFET packaged in a surface-mount configuration (SOT-23). It has a total of 6 pins. The key functions of its pins are:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
These MOSFETs are typically used in power management applications, switching, and signal amplification.

Manufacturer

The NRVTSM260EV2T1G is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona, USA. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices, as well as power management and logic products. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing.
ON Semiconductor is known for its commitment to innovation and sustainability, focusing on energy-efficient products and technologies. With a robust portfolio, the company positions itself as a key player in the semiconductor industry, addressing the growing demand for advanced electronic components in a variety of applications.

Application

The NRVTSM260EV2T1G is a transient voltage suppressor (TVS) designed for protecting sensitive electronic components from voltage spikes and transients. Its primary application areas include:
1. Consumer Electronics: Safeguarding devices like smartphones, tablets, and laptops.
2. Automotive: Protecting automotive electronics and sensors from voltage surges.
3. Telecommunications: Shielding network equipment and communication devices.
4. Industrial Equipment: Ensuring reliability in industrial control systems and machinery.
5. Data Line Protection: Used in USB, HDMI, and other data lines to prevent damage from electrostatic discharge (ESD) and surge events.
Its compact size and efficiency make it suitable for space-constrained applications.

Package

The NRVTSM260EV2T1G is packaged in a SOT-23-3, which is a small, surface-mount package type commonly used for compact electronic designs.

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