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NRVTSM260EV2T1G
+Lista de MateriaisDIODE SCHOTTKY 60V 2A POWERMITE
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Fabricanteonsemi
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Peça do Fabricante #NRVTSM260EV2T1G
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Ficha Técnica NRVTSM260EV2T1G DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 12 µA @ 60 V |
| Mounting Type | Surface Mount |
| Package / Case | DO-216AA |
| Supplier Device Package | Powermite |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | NRVTSM260 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Visão Geral
Description
Key features include:
1. Input Voltage Range: Typically supports a wide range of input voltages, making it versatile for different power supply scenarios.
2. Output Current: Capable of delivering a substantial output current, suitable for powering multiple components.
3. Thermal Protection: Includes safety features such as thermal shutdown and overcurrent protection to prevent damage from overheating or excessive current.
4. Compact Design: Designed for efficiency in space-constrained applications, allowing for integration into compact PCBs.
The NRVTSM260EV2T1G is ideal for use in consumer electronics, automotive applications, and telecommunications, providing reliable power regulation in various environments.
Equivalent
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of up to 60V.
2. Continuous Drain Current: Can handle a continuous drain current (I_D) of 260A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) of around 0.005 ohms, which helps reduce power loss during operation.
4. Thermal Performance: Designed with a low thermal resistance, allowing for effective heat dissipation and enhancing reliability.
5. Fast Switching Speed: Supports rapid switching, making it ideal for applications like DC-DC converters and motor drives.
6. TO-220 Package: Housed in a TO-220 package for easy mounting and heat sinking.
7. RoHS Compliant: Meets environmental standards for hazardous substances.
These features make the NRVTSM260EV2T1G an excellent choice for applications requiring efficient power control.
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
These MOSFETs are typically used in power management applications, switching, and signal amplification.
Manufacturer
ON Semiconductor is known for its commitment to innovation and sustainability, focusing on energy-efficient products and technologies. With a robust portfolio, the company positions itself as a key player in the semiconductor industry, addressing the growing demand for advanced electronic components in a variety of applications.
Application
1. Consumer Electronics: Safeguarding devices like smartphones, tablets, and laptops.
2. Automotive: Protecting automotive electronics and sensors from voltage surges.
3. Telecommunications: Shielding network equipment and communication devices.
4. Industrial Equipment: Ensuring reliability in industrial control systems and machinery.
5. Data Line Protection: Used in USB, HDMI, and other data lines to prevent damage from electrostatic discharge (ESD) and surge events.
Its compact size and efficiency make it suitable for space-constrained applications.