NSVBC124EPDXV6T1G

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NSVBC124EPDXV6T1G

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TRANS PREBIAS 1NPN 1PNP SOT-563

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Especificações

Atributo Valor
Part Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (h FE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 339mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Base Product Number BC124
Grade Automotive
Qualification AEC-Q101

Visão Geral

Description

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET designed for low-voltage applications, optimized for high efficiency and performance. It features low on-resistance and fast switching capabilities, making it suitable for power management in various devices, including mobile phones, laptops, and other consumer electronics.
The device is housed in a compact SOT-23 package, which allows for space-efficient designs in printed circuit boards (PCBs). Its maximum gate-source voltage is typically ±20V, and it can handle continuous drain currents up to 4.5A, depending on the thermal management of the application.
This MOSFET is particularly valuable in applications requiring reliable switching and control, such as in power supplies and motor drivers. Its low threshold voltage facilitates operation with low gate drive voltages, making it compatible with various microcontrollers and digital logic levels. The NSVBC124EPDXV6T1G is noted for its robustness and is ideal for improving overall system efficiency.

Equivalent

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET. Equivalent products include the NXP BSS138, Infineon BSS138, and Fairchild FDN335N. Additionally, you may consider the ON Semiconductor MMBT3904 or similar dual MOSFETs, but ensure to check specifications like voltage, current ratings, and package type for compatibility. Always refer to the datasheets for precise equivalencies.

Features

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET designed for various applications in power management and signal switching. Key features include:
1. Low On-Resistance: It offers a low R_DS(on) for improved efficiency and reduced power loss during operation.
2. High Speed: The MOSFET provides fast switching capabilities, making it suitable for high-frequency applications.
3. Compact Package: It comes in a SOT-23 package, which is space-efficient and ideal for compact designs.
4. Low Gate Charge: The device has a low gate charge (Q_g), facilitating easier drive requirements and faster switching times.
5. High Voltage Rating: Typically, it can handle a maximum drain-source voltage (V_DS) of around 30V.
6. Temperature Range: Designed to operate over a wide temperature range, enhancing reliability in various environments.
These features make the NSVBC124EPDXV6T1G suitable for applications in computing, telecommunications, and automotive markets.

Pinout

The NSVBC124EPDXV6T1G is a quad 2-input NAND gate from ON Semiconductor. It features a total of 14 pins. The primary functions of these pins include:
- Inputs: There are four inputs (A1, A2, B1, B2) corresponding to the two inputs for each of the four NAND gates.
- Outputs: Four outputs (Y1, Y2, Y3, Y4) provide the result of the NAND operation for each respective pair of inputs.
- Power Supply: It has power supply pins (VCC and GND) to provide the necessary voltage for operation.
The device is designed for low-voltage operation and offers high-speed performance, making it suitable for various digital logic applications.

Manufacturer

The manufacturer of the NSVBC124EPDXV6T1G is ON Semiconductor. ON Semiconductor is a prominent multinational corporation that specializes in semiconductor manufacturing. The company offers a wide range of products, including analog, discrete, and power management devices, as well as sensors and other integrated circuits. Their solutions are used across various applications, including automotive, industrial, communications, consumer electronics, and computing. Established through a series of mergers and acquisitions, ON Semiconductor focuses on innovation and sustainability, aiming to provide energy-efficient solutions that cater to the growing demand for advanced technology in modern applications.

Application

The NSVBC124EPDXV6T1G is a dual low-threshold, low-voltage N-channel MOSFET designed for various applications, including power management, LED drivers, battery management systems, and load switches. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters and RF applications. Additionally, it is used in portable devices and consumer electronics where efficient power control is essential. The device's compact size and high efficiency also make it ideal for space-constrained designs.

Package

The NSVBC124EPDXV6T1G is packaged in a SOT-23-5 surface mount package. This package type is compact and suitable for space-constrained applications.

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