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NSVBC124EPDXV6T1G
+Lista de MateriaisTRANS PREBIAS 1NPN 1PNP SOT-563
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Fabricanteonsemi
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Peça do Fabricante #NSVBC124EPDXV6T1G
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Ficha Técnica NSVBC124EPDXV6T1G DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 339mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Base Product Number | BC124 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Visão Geral
Description
The device is housed in a compact SOT-23 package, which allows for space-efficient designs in printed circuit boards (PCBs). Its maximum gate-source voltage is typically ±20V, and it can handle continuous drain currents up to 4.5A, depending on the thermal management of the application.
This MOSFET is particularly valuable in applications requiring reliable switching and control, such as in power supplies and motor drivers. Its low threshold voltage facilitates operation with low gate drive voltages, making it compatible with various microcontrollers and digital logic levels. The NSVBC124EPDXV6T1G is noted for its robustness and is ideal for improving overall system efficiency.
Equivalent
Features
1. Low On-Resistance: It offers a low R_DS(on) for improved efficiency and reduced power loss during operation.
2. High Speed: The MOSFET provides fast switching capabilities, making it suitable for high-frequency applications.
3. Compact Package: It comes in a SOT-23 package, which is space-efficient and ideal for compact designs.
4. Low Gate Charge: The device has a low gate charge (Q_g), facilitating easier drive requirements and faster switching times.
5. High Voltage Rating: Typically, it can handle a maximum drain-source voltage (V_DS) of around 30V.
6. Temperature Range: Designed to operate over a wide temperature range, enhancing reliability in various environments.
These features make the NSVBC124EPDXV6T1G suitable for applications in computing, telecommunications, and automotive markets.
Pinout
- Inputs: There are four inputs (A1, A2, B1, B2) corresponding to the two inputs for each of the four NAND gates.
- Outputs: Four outputs (Y1, Y2, Y3, Y4) provide the result of the NAND operation for each respective pair of inputs.
- Power Supply: It has power supply pins (VCC and GND) to provide the necessary voltage for operation.
The device is designed for low-voltage operation and offers high-speed performance, making it suitable for various digital logic applications.