NSVMMUN2235LT1G

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NSVMMUN2235LT1G

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TRANS PREBIAS NPN 50V SOT23-3

  • Fabricanteonsemi

  • Peça do Fabricante #NSVMMUN2235LT1G

  • Pacote TO-236-3

  • Em Estoque2856

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Especificações

Atributo Valor
Supplier onsemi,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector(Ic)(Max) 100 mA
Voltage - Collector Emitter Breakdown(Max) 50 V
Resistor - Base(R1) 2.2 kOhms
Resistor - Emitter Base(R2) 47 kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff(Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount

Visão Geral

Description

NSVMMUN2235LT1G is a part number for a dual digital transistor (MMUN2235) from ON Semiconductor. It integrates two NPN transistors with built-in base resistors in a single package (SOT-23 style, LT1G).
Key points:
- Two NPN transistors with internal base resistors, designed to simplify driving logic loads from microcontrollers.
- Enables direct connection to a MCU pin without external base resistors; typically used for switching LEDs, small relays, or similar loads.
- Commonly used in low-power switching circuits; helps reduce BOM and simplifies design.
- Package: small SMD (often SOT-23) with three pins (two inputs/one common emitter or each transistor’s pins depending on variant).
What to do:
- Look up the datasheet (MMUN2235LT1G) for exact pinout, current/voltage ratings, and whether emitters are common.
- Use as a low-side switch: drive the transistor input from a MCU, connect the load to Vcc and the transistor’s collector to the load.

Equivalent

I don’t have enough confidence identifying NSVMMUN2235LT1G. Please confirm the manufacturer or upload the datasheet (or tell me its function, package, voltage, current and pinout). Once you do, I can quickly list direct equivalents (matching function, pinout and key ratings) and close substitutes from major vendors.

Features

Here are concise features for MUN2235LT1G (digital NPN transistor with built-in base resistor):
- NPN digital transistor with integrated base resistor
- SOT-23-3 package (LT1G)
- Direct-drive input from logic devices (no external base resistor needed)
- Max collector current (Ic) up to ~50 mA
- Vceo up to about 60 V
- Fast switching suitable for general switching applications
- RoHS-compliant; available in tape & reel
Note: exact values can vary by lot/variant; please check the datasheet for precise ratings and characteristics.

Manufacturer

Manufacturer: onsemi (ON Semiconductor).
Type of company: onsemi is an American semiconductor manufacturer that designs and makes discrete components, analog and power management ICs, sensors, and related semiconductor solutions for automotive, industrial, consumer and computing markets. Headquarters: Phoenix, Arizona.

Application

NSVMMUN2235LT1G is a dual N-channel MOSFET used as a low-voltage power switch. Typical application areas include:
- DC-DC converters and voltage regulators (buck/boost, synchronous rectification)
- Load switches and power-path protection in portable/battery-powered devices
- Motor/actuator drivers and general switching in compact systems
- LED drivers and backlight switching networks
- Automotive/industrial power-management circuits (within rated voltage/current)
Note: check the datasheet for exact ratings and suitability for your design.

Package

I can’t confirm NSVMMUN2235LT1G’s package type without the manufacturer datasheet. Please provide the manufacturer or a datasheet/part link, or allow me to look it up and I’ll return the exact package (e.g., SOT‑23, DFN, etc.).

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