NT5DS32M16ES-5T

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NT5DS32M16ES-5T

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  • FabricanteNanya Technology

  • Peça do Fabricante #NT5DS32M16ES-5T

  • Em Estoque8576

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Especificações

Atributo Valor
EURoHS Compliant
ECCN(US) EAR99
PartStatus Obsolete
HTS 8542.32.00.28
Automotive Unknown
PPAP Unknown
MinimumOperatingSupplyVoltage(V) 2.3
TypicalOperatingSupplyVoltage(V) 2.5
MaximumOperatingSupplyVoltage(V) 2.7
MinimumOperatingTemperature(°C) 0
MaximumOperatingTemperature(°C) 70
SupplierTemperatureGrade Commercial
Mounting Surface Mount
PackageHeight 1.2(Max)
PackageWidth 10.16
PackageLength 22.22
PCBchanged 66
StandardPackageName SO
SupplierPackage TSOP-II
PinCount 66
ChipDensity(bit) 512M
NumberofBits/Word(bit) 16
DataBusWidth(bit) 16
MaximumClockRate(MHz) 400
DRAMType DDR SDRAM
Organization 32Mx16
NumberofInternalBanks 4
NumberofWordsperBank 8M
AddressBusWidth(bit) 15
OperatingCurrent(mA) 120
NumberofI/OLines(bit) 16
MaximumAccessTime(ns) 0.7
InterfaceType SSTL_2

Visão Geral

Description

The NT5DS32M16ES-5T is a DRAM (Dynamic Random Access Memory) chip from Nanya Technology, designed for high-performance applications. It is a 32Mx16 bit DDR3 SDRAM, featuring a data rate of 1600 MT/s and operates at a supply voltage of 1.5V. This memory chip is typically used in computing devices, including desktops, laptops, and servers, providing improved bandwidth and efficiency compared to earlier DDR generations.
With a 1GB capacity per chip, the NT5DS32M16ES-5T supports various memory architectures and configurations, making it suitable for both consumer and enterprise-level products. It adheres to industry standards, ensuring compatibility with a wide array of motherboards and systems. Additionally, its low power consumption makes it a preferred choice for energy-efficient applications. The chip is packaged in a compact FBGA (Fine Ball Grid Array) format, facilitating easy integration into circuit boards. Overall, the NT5DS32M16ES-5T is a reliable and efficient memory solution for modern computing needs.

Equivalent

The NT5DS32M16ES-5T is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83BFR - DDR3 2GB
2. Micron MT41K128M16HA - DDR3 2GB
3. Samsung K4B4G1646F - DDR3 2GB
4. Nanya NT5CB256M16D1 - DDR3 2GB
Ensure compatibility with your specific application, as specifications may vary.

Features

The NT5DS32M16ES-5T is a 2GB DDR3 SDRAM memory module designed for high performance in computing applications. Key features include:
1. Capacity: 2GB (Gigabytes) of storage.
2. Type: DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory).
3. Data Rate: Operates at a data rate of 1600 MT/s (Mega Transfers per second).
4. Bus Speed: Typically compatible with PC3-12800 standards.
5. Organization: Configured as 256 Meg x 16 (16-bit wide).
6. Voltage: Operates at a nominal voltage of 1.5V.
7. Pin Count: 240-pin DIMM form factor.
8. Package: Available in a RoHS-compliant package, ensuring environmental safety.
9. Latency: Offers low latency suitable for various applications.
This module is ideal for enhancing system performance in desktops, laptops, and servers, providing efficient multitasking and improved load times.

Pinout

The NT5DS32M16ES-5T is a DDR3 SDRAM memory chip with a pin count of 78. It is designed to provide high-speed memory for various applications, such as computers and other electronic devices. The device operates with a supply voltage of 1.5V and features a 32M x 16 configuration, which means it has a capacity of 512 megabits.
Key functions of the NT5DS32M16ES-5T include data storage, retrieval, and buffering, facilitating efficient data access in computing environments. It supports various DDR3 features like burst mode and multiple data rates, enhancing overall performance. The chip is typically used in memory modules for laptops, desktops, and servers.

Manufacturer

The manufacturer of the NT5DS32M16ES-5T is Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and manufacturing of memory products, particularly DRAM (Dynamic Random Access Memory) chips. Established in 1995, Nanya is known for producing various types of DRAM, including standard DRAM modules, specialty DRAM for specific applications, and memory solutions for consumer electronics, computers, and servers. The company plays a significant role in the semiconductor industry, focusing on high-quality memory solutions while engaging in research and development to innovate and enhance its product offerings. Nanya Technology is publicly traded and is recognized as one of the prominent players in the global memory market.

Application

The NT5DS32M16ES-5T is a 512Mb DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, computing devices, networking equipment, and embedded systems. Its capabilities make it suitable for use in smartphones, tablets, laptops, desktops, servers, and gaming consoles. Additionally, it is utilized in industrial applications and automotive electronics, where reliable memory performance is essential. The chip supports high-speed data processing and is designed for efficient power consumption, making it ideal for both everyday and high-performance computing environments.

Package

The NT5DS32M16ES-5T is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density memory applications, providing efficient thermal performance and compact footprint suitable for various electronic devices.

Frequently Asked Questions


Q: What is the memory density and organization of the NT5DS32M16ES-5T?
A: It features 512Mbit density with a 32Mx16 organization, providing 16-bit data bus width for DDR SDRAM applications.


Q: What is the maximum clock rate and access time?
A: It supports a maximum clock rate of 400 MHz with a rapid access time of 0.7 ns, ideal for high-speed data processing.


Q: What are the operating voltage requirements?
A: It operates at a typical supply voltage of 2.5V, with a range from 2.3V to 2.7V, compatible with SSTL_2 interface standards.


Q: Is this component suitable for commercial temperature environments?
A: Yes, it has a commercial temperature grade with a range from 0°C to 70°C, ensuring reliable performance in standard operating conditions.


Q: What is the package type and pin configuration?
A: It comes in a 66-pin TSOP-II surface-mount package, measuring 22.22mm x 10.16mm, with a maximum height of 1.2mm.


Q: How many internal banks and I/O lines does it have?
A: It has 4 internal banks, 16 I/O lines, and supports 15-bit address bus width for efficient memory management.


Q: What is the typical operating current consumption?
A: The typical operating current is 120 mA, which balances power efficiency with DDR SDRAM performance requirements.


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