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NTBG028N170M1
+Lista de MateriaisSIC MOSFET 1700 V 28 MOHM M1 SER
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 60A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 800 V |
| Power Dissipation (Max) | 428W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number | NTBG028 |
Visão Geral
Description
NTBG028N170M1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Part of the N-channel MOSFET family, it features a low on-resistance, enabling efficient power management and thermal performance. This component is commonly used in power supply circuits, motor drives, and various switching applications due to its ability to handle high currents and voltages.
Key specifications typically include a maximum drain-source voltage (V_DS) of approximately 28V, a continuous drain current (I_D) rating, and gate threshold voltage (V_GS(th)). Its structure allows for fast switching speeds, making it suitable for both high-frequency and low-frequency applications.
The NTBG028N170M1 is often utilized in consumer electronics, automotive systems, and industrial equipment. For design engineers, understanding its thermal resistance and safe operating area is crucial for effective implementation in circuit designs. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Key specifications typically include a maximum drain-source voltage (V_DS) of approximately 28V, a continuous drain current (I_D) rating, and gate threshold voltage (V_GS(th)). Its structure allows for fast switching speeds, making it suitable for both high-frequency and low-frequency applications.
The NTBG028N170M1 is often utilized in consumer electronics, automotive systems, and industrial equipment. For design engineers, understanding its thermal resistance and safe operating area is crucial for effective implementation in circuit designs. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Equivalent
The NTBG028N170M1 is a high-voltage N-channel MOSFET. Equivalent products include the BSC084N10, IRF270, and AON6116. For alternative options, consider the STW50N60, FQA11N90 or the CSD18534KCS. Always check specific datasheets for electrical characteristics and suitability for your application.
Features
The NTBG028N170M1 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain currents up to 28A, providing robust performance in power circuits.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, essential for applications requiring rapid on/off control.
5. Thermal Performance: It has a high thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and heat management.
These attributes make the NTBG028N170M1 suitable for use in DC-DC converters, motor drives, and other high-efficiency power applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain currents up to 28A, providing robust performance in power circuits.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, essential for applications requiring rapid on/off control.
5. Thermal Performance: It has a high thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and heat management.
These attributes make the NTBG028N170M1 suitable for use in DC-DC converters, motor drives, and other high-efficiency power applications.
Pinout
The NTBG028N170M1 is a GaN (gallium nitride) power transistor, specifically designed for high-efficiency power applications. It features a pin count of 8. The functions of the pins are as follows:
1. Gate (G): Controls the on/off state of the transistor.
2. Drain (D): The output terminal where the current flows to the load.
3. Source (S): The terminal that connects to the ground or the lower potential side of the circuit.
4. Gate Source (GS): Provides the necessary voltage to switch the transistor.
5. Thermal Pad: Typically used for heat dissipation, enhancing thermal management.
This device is commonly utilized in applications like power converters, inverters, and motor drives, where high efficiency and fast switching capabilities are essential. For precise configurations and further details, referring to the manufacturer's datasheet is recommended.
1. Gate (G): Controls the on/off state of the transistor.
2. Drain (D): The output terminal where the current flows to the load.
3. Source (S): The terminal that connects to the ground or the lower potential side of the circuit.
4. Gate Source (GS): Provides the necessary voltage to switch the transistor.
5. Thermal Pad: Typically used for heat dissipation, enhancing thermal management.
This device is commonly utilized in applications like power converters, inverters, and motor drives, where high efficiency and fast switching capabilities are essential. For precise configurations and further details, referring to the manufacturer's datasheet is recommended.
Manufacturer
The NTBG028N170M1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET semiconductors. The company focuses on delivering high-quality electronic components for various applications, including automotive, industrial, consumer electronics, and telecommunications. Nexperia was formed in 2017 after being spun off from NXP Semiconductors, and it emphasizes efficiency and reliability in its product offerings. With a strong commitment to innovation and quality, Nexperia is positioned as a key player in the semiconductor industry, providing essential components that enable the functionality of modern electronic devices.
Application
The NTBG028N170M1 is a high-performance N-channel MOSFET primarily used in power electronics applications. Its main application areas include:
1. Power Conversion: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Drives: Employed in electric motor control systems for efficient switching.
3. Battery Management Systems: Utilized in power distribution and management for battery-operated devices.
4. Renewable Energy Systems: Integrated into inverters for solar and wind energy conversion.
5. LED Drivers: Applied in lighting systems for efficient power management.
These applications leverage its high efficiency, low RDS(on), and fast switching capabilities.
1. Power Conversion: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Drives: Employed in electric motor control systems for efficient switching.
3. Battery Management Systems: Utilized in power distribution and management for battery-operated devices.
4. Renewable Energy Systems: Integrated into inverters for solar and wind energy conversion.
5. LED Drivers: Applied in lighting systems for efficient power management.
These applications leverage its high efficiency, low RDS(on), and fast switching capabilities.
Package
The NTBG028N170M1 is a MOSFET packaged in a TO-247 format. This packaging provides efficient heat dissipation and is suitable for high-power applications.
