Imagens apenas para referência
NTJD4152PT1G
+Lista de MateriaisMOSFET 2P-CH 20V 0.88A SOT-363
-
Fabricanteonsemi
-
Peça do Fabricante #NTJD4152PT1G
-
Pacote SOT-363
-
Em Estoque5761
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 880mA |
| RdsOn(Max)@IdVgs | 260mOhm @ 880mA, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.2nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 155pF @ 20V |
| Power-Max | 272mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Visão Geral
Description
"Introduction to NTJD4152PT1G" likely refers to a specific course, module, or technical subject, possibly in a specialized field such as engineering, technology, or a niche area of study. Given the complexity often associated with such codes, NTJD4152PT1G might be an identifier for a particular topic or course designed for a targeted audience, such as students or professionals in a technical discipline.
The introduction to this subject would typically cover the foundational concepts, objectives, and scope of the material. It might outline key themes, methodologies, or tools that will be explored. Additionally, it could provide context for why this topic is important, its applications in real-world scenarios, and any prerequisites needed to grasp the content effectively.
Without specific information about NTJD4152PT1G, the introduction is likely to focus on orienting participants to the essential elements of the subject, setting the stage for more in-depth exploration in subsequent sessions or chapters. If this is part of a curriculum, it may also detail the learning outcomes and assessment criteria.
The introduction to this subject would typically cover the foundational concepts, objectives, and scope of the material. It might outline key themes, methodologies, or tools that will be explored. Additionally, it could provide context for why this topic is important, its applications in real-world scenarios, and any prerequisites needed to grasp the content effectively.
Without specific information about NTJD4152PT1G, the introduction is likely to focus on orienting participants to the essential elements of the subject, setting the stage for more in-depth exploration in subsequent sessions or chapters. If this is part of a curriculum, it may also detail the learning outcomes and assessment criteria.
Equivalent
The NTJD4152PT1G is a dual N-channel MOSFET produced by ON Semiconductor. Possible equivalent or similar products include:
1. Si2302DS by Vishay
2. FDV303N by ON Semiconductor
3. IRFML8244 by Infineon Technologies
Make sure to verify electrical characteristics and package type to ensure compatibility for your specific application. Always consult datasheets for precise specifications and comparisons.
1. Si2302DS by Vishay
2. FDV303N by ON Semiconductor
3. IRFML8244 by Infineon Technologies
Make sure to verify electrical characteristics and package type to ensure compatibility for your specific application. Always consult datasheets for precise specifications and comparisons.
Features
The NTJD4152PT1G is a dual N-channel MOSFET produced by ON Semiconductor. It features a compact design suitable for space-constrained applications. Key specifications include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 20V.
2. Current Rating: The continuous drain current (I_D) is approximately 3.1A.
3. R_DS(ON): The on-resistance is around 100mΩ at a gate-source voltage (V_GS) of 4.5V.
4. Gate Threshold Voltage: Typically ranges from 0.4V to 1.5V.
5. Package Type: Housed in a small SOT-563 package, ideal for high-density electronic applications.
6. Performance: Offers low gate charge and fast switching, enhancing efficiency in power management tasks.
7. Applications: Suitable for use in load switching, DC-DC converters, and power management in portable devices.
These features make the NTJD4152PT1G a versatile component for various low-power electronic applications.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 20V.
2. Current Rating: The continuous drain current (I_D) is approximately 3.1A.
3. R_DS(ON): The on-resistance is around 100mΩ at a gate-source voltage (V_GS) of 4.5V.
4. Gate Threshold Voltage: Typically ranges from 0.4V to 1.5V.
5. Package Type: Housed in a small SOT-563 package, ideal for high-density electronic applications.
6. Performance: Offers low gate charge and fast switching, enhancing efficiency in power management tasks.
7. Applications: Suitable for use in load switching, DC-DC converters, and power management in portable devices.
These features make the NTJD4152PT1G a versatile component for various low-power electronic applications.
Pinout
The NTJD4152PT1G is a dual N-channel MOSFET, which typically comes in a 6-pin SOT-563 package. Each MOSFET in the dual package has three terminals: gate, source, and drain.
Here's a concise breakdown of the pin configuration:
- Pins 1 and 4: Source of MOSFET 1 and 2, respectively.
- Pins 2 and 5: Gate of MOSFET 1 and 2, respectively.
- Pins 3 and 6: Drain of MOSFET 1 and 2, respectively.
The NTJD4152PT1G is used in applications requiring efficient switching and amplification, such as in power management, load switching, and signal processing. Its compact package makes it suitable for space-constrained applications.
Here's a concise breakdown of the pin configuration:
- Pins 1 and 4: Source of MOSFET 1 and 2, respectively.
- Pins 2 and 5: Gate of MOSFET 1 and 2, respectively.
- Pins 3 and 6: Drain of MOSFET 1 and 2, respectively.
The NTJD4152PT1G is used in applications requiring efficient switching and amplification, such as in power management, load switching, and signal processing. Its compact package makes it suitable for space-constrained applications.
Manufacturer
The NTJD4152PT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global semiconductor company that designs, manufactures, and supplies a wide range of semiconductor components. The company focuses on products for various applications, including automotive, industrial, communication, computing, and consumer electronics. They provide solutions in power management, analog, sensors, logic, timing, and connectivity. onsemi is known for its emphasis on energy-efficient innovations and has a significant presence in the global semiconductor market.
Application
The NTJD4152PT1G is a MOSFET, specifically a dual N-channel MOSFET, which is commonly used in applications such as load switching, power management, DC-DC converters, and motor control. Its compact SOT-23 package makes it suitable for space-constrained designs. The device's low on-resistance and high-speed switching capabilities make it ideal for battery-powered and portable devices, improving efficiency and performance. Additionally, it finds application in consumer electronics, automotive systems, and industrial equipment where efficient power control and management are essential.
Package
The NTJD4152PT1G is a MOSFET package with a dual N-channel and P-channel configuration. It is typically available in a compact SOT-563 (Small Outline Transistor) package, which is suitable for space-constrained applications.
