Imagens apenas para referência
NTLJD3119CTBG
+Lista de MateriaisMOSFET N/P-CH 20V 6WDFN
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Fabricanteonsemi
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Peça do Fabricante #NTLJD3119CTBG
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Pacote WDFN-6
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | µCool™ |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.6A, 2.3A |
| RdsOn(Max)@IdVgs | 65mOhm @ 3.8A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 271pF @ 10V |
| Power-Max | 710mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-WDFN Exposed Pad |
Visão Geral
Description
The introduction could also outline the key components or features, offering a foundational understanding for newcomers. If the context is educational or training-related, it might set the stage for more advanced topics or practices associated with the code or name in question. To gain a clearer understanding, one would need to refer directly to the corresponding materials or resources that provide detailed information on NTLJD3119CTBG.
Equivalent
1. FDMC8030 from ON Semiconductor
2. SI4936BDY from Vishay
3. BSC0925NDI from Infineon
4. FDS6990A from Fairchild Semiconductor
These components offer similar specifications and function as dual N-channel MOSFETs, making them potential substitutes in various applications. Always verify electrical characteristics and package compatibility with the specific application requirements.
Features
1. Type: It is a MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor.
2. Channel: N-Channel, indicating the type of charge carrier utilized.
3. Voltage Rating: It usually has a specific drain-source voltage rating, often around 30V, but it's essential to verify this in the datasheet for precision.
4. Current Rating: The continuous drain current rating is often specified; check the component's datasheet for exact figures.
5. RDS(on): This figure, known as on-resistance, impacts efficiency and thermal performance, usually specified in milliohms.
6. Package Type: Commonly available in compact surface-mount packages suitable for PCB designs.
7. Applications: Typically used in power management, load switching, and DC-DC converters.
8. Performance Characteristics: Features low gate charge and fast switching speeds, contributing to efficient operation.
Always refer to the manufacturer's datasheet for detailed specifications and to ensure suitability for your particular application.
Pinout
- Gate (G): Controls the MOSFET's conduction state.
- Drain (D): The terminal through which the current enters the MOSFET.
- Source (S): The terminal through which the current exits the MOSFET.
In dual configurations, each MOSFET will have its own gate, drain, and source pins. This setup allows the chip to effectively control two separate circuits or loads simultaneously, making it suitable for various switching applications. The NTLJD3119CTBG is often used in power management and load switching applications due to its low on-resistance and efficient performance in small form factor devices. For exact pin assignments, consulting the datasheet is advisable.